MBD914 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com MBD914 SWITCHING DIODE HIGH−SPEED SWITCHING DIODE REV1.0 - AUG 2015 RELEASED - - 1 - DESCRIPTION FEATURES The MBD914 is available in SOT-23 Package. Available in SOT-23 Package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SOT-23 MBD914 Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products
AiT Semiconductor Inc. www.ait-ic.com MBD914 SWITCHING DIODE HIGH−SPEED SWITCHING DIODE REV1.0 - AUG 2015 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS VR, Reverse Voltage 100Vdc IF, Forward Current 200mAdc IFM(surge), Peak Forward Surge Current 500mAdc Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS NOTE1: FR-5 = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted. Parameter Symbol Conditions Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V(BR) IR = 100μAdc 100 - Vdc Reverse Voltage Leakage Current IR VR = 20Vdc - 25 nAdc VR = 75Vdc - 5.0 μAdc Diode Capacitance CT VR = 0V, f = 1.0 MHz - 4.0 pF Forward Voltage VF IF = 10mAdc - 1.0 Vdc Reverse Recovery Time trr IF = IR = 10mAdc (Figure.1) - 4.0 ns Parameter Symbol Max Unit Total Device Dissipation FR– 5 Board, NOTE1 PD TA = 25℃ 225 mW Derate above 25℃ 1.8 mW/℃ Thermal Resistance, Junction to Ambient RθJA 556 ℃/W Total Device Dissipation Alumina SubstrateNOTE2 PD TA = 25°C 300 mW Derate above 25°C 2.4 mW/℃ Thermal Resistance, Junction to Ambient RθJA 417 ℃/W Junction and Storage Temperature TJ, TSTG -55 ~ +150 ℃
AiT Semiconductor Inc. www.ait-ic.com MBD914 SWITCHING DIODE HIGH−SPEED SWITCHING DIODE REV1.0 - AUG 2015 RELEASED - - 3 - TYPICAL PERFORMANCE CHARACTERISTICS Figure. 1 Recovery Time Equivalent Test Circuit NOTE1: A 2.0kΩ variable resistor adjusted for a Forward Current (IF) of 10mA. NOTE2: Input pulse is adjusted so IR(peak) is equal to 10mA. NOTE3: tp » trr Figure. 2 Forward Voltage Figure. 3 Leakage Current Figure. 4 Capacitance
AiT Semiconductor Inc. www.ait-ic.com MBD914 SWITCHING DIODE HIGH−SPEED SWITCHING DIODE REV1.0 - AUG 2015 RELEASED - - 4 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60
AiT Semiconductor Inc. www.ait-ic.com MBD914 SWITCHING DIODE HIGH−SPEED SWITCHING DIODE REV1.0 - AUG 2015 RELEASED - - 5 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises i ts customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. ’s integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.