MBD110DWT1 KEXIN | Alldatasheet
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Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage Absolute Maximum Ratings Ta = 25 Symbol Value Unit MBD110DWT1 7 MBD330DWT1 30 MBD770DWT1 70 P F 120 mA TJ - 5 5t o+ 1 2 5 Tstg - 5 5t o+ 1 5 0 Junction Temperature Storage Temperature Range Vdc Parameter Reverse Voltage V R Forward Power Dissipation T A =2 5
2 www.kexin.com.cn Marking Type MBD110DWT1 MMBD330DWT1 MBD770DWT1 Marking M4 T4 H5 Electrical Characteristics Ta = 25 Symbol Conditions Min Typ Max Unit MBD110DWT1 7.0 10 MBD330DWT1 30 MBD770DWT1 70 Diode Capacitance MBD110DWT1 C T VR = 0, f = 1.0 MHz 0.88 1.0 pF MBD330DWT1 V R = 15 Volts, f = 1.0 MHz 0.9 1.5 MBD770DWT1 V R = 20 Volts, f = 1.0 MHz 0.5 1.0 MBD110DWT1 V R = 3.0 V 0.02 0.25 A MBD330DWT1 V R = 25 V 13 200 nAdc MBD770DWT1 V R = 35 V 9 200 nAdc Noise Figure MBD110DWT1 NF f = 1.0 GHz 6 dB MBD110DWT1 I F =1 0m A 0 . 5 0 . 6 MBD330DWT1 I F = 1.0 mAdc 0.38 0.45 IF = 10 mA 0.52 0.6 MBD770DWT1 I F = 1.0 mAdc 0.47 0.5 IF =1 0m A 0 . 7 1 . 0 pFTotal Capacitance C T VdcForward Voltage Parameter VBR(R) IR VF Reverse Breakdown Voltage Reverse Leakage IR =1 0 A Volts MBD110DWT1 MBD330DWT1;MBD770DWT1