MBD4448W FCI | Alldatasheet

Document overview

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Technical content

  1. 30¡ À0. 05 1. 25¡ À0. 05 1.30¡À0.03 0.30 2.00¡À0.05

1.01 REF

FEATURES

P D: 2 0 0 m W ( T a m b = 2 5℃) Collector current I O: 2 5 0 mA Collector-base voltage V R: 7 5 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Reverse breakdown voltage V(BR) R IR= 10µA 75 V Reverse voltage leakage current IR VR=20V VR=75V 0.025 2.5 µA Forward voltage VF IF=5mA IF=10mA IF=100mA IF=150mA 0.72 0.855 1.25 V Diode capacitance CD V R=0V, f=1MHz 4 pF Reverse recovery time t r r IF=IR=10mA Irr=0.1×IR ,RL=100Ω 4 nS Test period <3000µs. U n i t : m m SOT-323 Marking: KA3 Data Sheet 200mW Surface Mount Switching Diode