MBD3004S AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com MBD3004S SWITCHING DIODES HIGH VOL TAGE SURFACE MOUNT REV1.1 - MAR 2011 RELEASED, SEP 2012 UPDATED – - 1 - DESCRIPTION FEATURES The MBD3004S is available in SOT-23 package Fast Switching Speed High Conductance High Reverse Breakdown Voltage Rating Available in SOT-23 package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SOT-23 MBD3004S Note 3,000pcs/Reel AiT provides all RoHS Compliant Products
AiT Semiconductor Inc. www.ait-ic.com MBD3004S SWITCHING DIODES HIGH VOL TAGE SURFACE MOUNT REV1.1 - MAR 2011 RELEASED, SEP 2012 UPDATED – - 2 - ABSOLUTE MAXIMUM RATINGS TA=25℃ unless otherwise specified VRRM, Repetitive Peak Reverse Voltage 350 V VRWM, Working Peak Reverse Voltage 300 V VR, DC Blocking Voltage 300 V VR(RMS), RMS Reverse Voltage 212 V IF, Forward Continuous CurrentNote1 225mA IFRM, Peak Repetitive Forward CurrentNote1 625mA IFSM, Non-Repetitive Peak Forward Surge Current @t=1.0μs 4.0A @t=1.0s 1.0A PD, Power DissipationNote1 350mW RθJA, Thermal Resistance Junction to Ambient AirNote1 357 ℃/W TJ, Tstg, Operating and Storage Temperature Range -65 to +150℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Part mounted on FR-4 board with recommended pad layout.
AiT Semiconductor Inc. www.ait-ic.com MBD3004S SWITCHING DIODES HIGH VOL TAGE SURFACE MOUNT REV1.1 - MAR 2011 RELEASED, SEP 2012 UPDATED – - 3 -
ELECTRICAL CHARACTERISTICS
TA=25℃ unless otherwise specified, per element Parameter Symbol Conditions Min Typ Max Unit Reverse Breakdown VoltageNote2 V(BR)R IR=100μA 350 - - V Forward VoltageNote2 VF IF=20mA 0.78 0.87 V IF=100mA 0.93 1.0 IF=200mA 1.03 1.25 Reverse CurrentNote2 IR VR=240V 30 100 nA VR=240V, TJ=150℃ 35 100 μA Total Capacitance CT VR=0V, f=1.0MHZ - 1.0 5.0 Pf Reverse Recovery Time trr IF=IR=30mA - - 50 ns Irr=3.0mA, RL=100Ω NOTE2: Short duration test pulse used to minimize self-heating effect.
AiT Semiconductor Inc. www.ait-ic.com MBD3004S SWITCHING DIODES HIGH VOL TAGE SURFACE MOUNT REV1.1 - MAR 2011 RELEASED, SEP 2012 UPDATED – - 5 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.035 0.044 0.89 1.11 A1 0.001 0.004 0.01 0.10 b 0.015 0.020 0.37 0.50 c 0.003 0.007 0.09 0.18 D 0.110 0.120 2.80 3.04 E 0.047 0.055 1.20 1.40 e 0.070 0.081 1.78 2.04 L 0.004 0.012 0.10 0.30 L1 0.014 0.029 0.35 0.69 HE 0.083 0.104 2.10 2.64
AiT Semiconductor Inc. www.ait-ic.com MBD3004S SWITCHING DIODES HIGH VOL TAGE SURFACE MOUNT REV1.1 - MAR 2011 RELEASED, SEP 2012 UPDATED – - 6 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to ob tain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or s ervere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product desi gn or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.