MBC13917 FREESCALE | Alldatasheet
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© Freescale Semiconductor, Inc., 2006–2010. All rights reserved. Freescale Semiconductor Data Sheet: Advance Information This document contains information on a new product. Specifications and information herein are subject to change without notice. Document Number: MBC13917 Rev. 1.0, 12/2010 MBC13917
Package Information
Plastic Package: MLPD-6 1.5 mm x 2.0 mm Case: 2129-01
Ordering Information
1 Introduction
The MBC13917 is a cost-effective, high isolation amplifier fabricated with an advanced RF BiCMOS process using the SiGe:C module. This is the leadless package version of the MBC13916 device. The MBC13917 is designed for a wide range of general purpose RF applications and has excellent high frequency gain and noise figure. On-chip bias circuitry sets the bias point while matching is accomplished off-chip, affording the maximum in application flexibility.
1.1 Features
The MBC13917 has the following features:
- Usable frequency range = 100 MHz to 2500 MHz 27 dB typical gain at 434 MHz, Vcc = 2.7V N F min (device level) = 0.95 dB @ 434 MHz N F min (device level) = 0.95 dB @ 900 MHz 6.5 dBm typical output power at -10 dBm Pin at 900 MHz, Vcc = 2.7V MBC13917 General Purpose SiGe:C RF Cascode Low Noise Amplifier
Contents
5 Printed Circuit Board and Bill of Materials . . .33
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1.2 Applications
Figure 1. Functional Block Diagram
Electrical Characteristics
MBC13917 Advance Information, Rev. 1.0 Freescale Semiconductor 3
2 Electrical Characteristics
Table 1 lists the recommended operating conditions of the MBC13917 device. Table 2. lists the maximum ratings for the device. Table 3 lists electrical characteristics associated with noise performance measured in a 50 Ω system. Additional noise parameters are listed in Table 9. Table 1. Recommended Operating Conditions Table 2. Maximum Ratings (TA = 25°C, unless otherwise noted)
- Maximum Ratings are those values beyond which damage to the device may occur.
- ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤550 V and Machine Model (MM) ≤50 V. Additional
ESD data is available upon request. Table 3. Device Level Characteristics
MBC13917 Advance Information, Rev. 1.0
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Table 4 lists the electrical characteristics measured on evaluation boards tuned for typical application frequencies. Further details on the application circuits are shown in Section 4, “Application Circuits” and details on the boards are shown in Section 5, “Printed Circuit Board and Bill of Materials.” Maximum Stable Gain and Maximum Available Gain (Note1) MSG, MAG dB f= 350 MHz 34 36.4 — f= 430 MHZ 33.2 35.6 — f= 900 MHz 26.5 28.9 — f= 1900 MHZ 15 17.6 — Minimum Noise Figure NF min dB f= 350 MHz — 1.0 1.35 f= 430 MHZ — 0.95 1.30 f= 900 MHz — 0.95 1.30 f= 1900 MHz — 1.5 1.85 Output Third Order Intercept OIP3 dBm f= 350 MHz 7.7 9.7 — f= 430 MHZ 8.3 10.3 — f= 900 MHz 11.3 13.3 — f= 1900 MHz 11.6 13.6 — Reverse Isolation S12 dB f= 350 MHz -49 -53 — f= 430 MHZ -48 -52 — f= 900 MHz -42 -46 — f= 1900 MHz -40 -44 — Note: Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows: if K>1, MAG=|S21/S12(K ±SqRt(K2-1)| if K<1, MSG=|S21/S12| Table 4. Electrical Characteristics Measured in Frequency-Specific Tuned Circuits
350 MHz (see Figure 16)
Table 3. Device Level Characteristics (continued)
MBC13917 Advance Information, Rev. 1.0 Freescale Semiconductor 5 Noise Figure NF — 2.1 2.5 dB Output 3rd Order Intercept Point OIP3 8.0 9.5 — dBm Power Output at 1 dB Gain Compression P1 dBoutput -1 1 — dBm Input Return Loss S11 — -8 -7 dB Small Signal Gain S21 26 27 — dB Reverse Isolation S12 — -47 -46 dB Output Return Loss S22 — -9 -7.5 dB
370 MHz (see Figure 16)
Supply Current Icc — 4.7 5.6 mA RF Gain G 27.5 28.6 — dB Noise Figure NF — 2.2 2.6 dB Output 3rd Order Intercept Point OIP3 9.2 10.7 — dBm Power Output at 1 dB Gain Compression P1 dBoutput 0.7 2.2 — dBm Input Return Loss S11 — -12 -10 dB Small Signal Gain S21 27 28.5 — dB Reverse Isolation S12 — -47 -46 dB Output Return Loss S22 — -12 -10 dB
434 MHz (see Figure 17)
Supply Current Icc — 4.7 5.6 mA RF Gain G 26 27 — dB Noise Figure NF — 2.3 2.65 dB Output 3rd Order Intercept Point OIP3 9.5 10.9 — dBm Power Output at 1 dB Gain Compression P1 dBoutput 12 . 2 — d B m Input Return Loss S11 — -15 -10 dB Small Signal Gain S21 26 27 — dB Reverse Isolation S12 — -46 -45 dB Output Return Loss S22 — -19 -16 dB
900 MHz (see Figure 18)
Supply Current Icc — 4.7 5.6 mA RF Gain G 22.5 24 — dB Noise Figure NF — 1.19 1.5 dB Table 4. Electrical Characteristics Measured in Frequency-Specific Tuned Circuits (continued)
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3 Scattering and Noise Parameters
1900 MHz (see Figure 19)
Table 5. Scattering Parameters
Table 5. Scattering Parameters (continued)
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Table 6. Scattering Parameters
Table 6. Scattering Parameters (continued)
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Table 7. Scattering Parameters
Table 7. Scattering Parameters (continued)
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Table 8. Scattering Parameters
Table 8. Scattering Parameters (continued)
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Table 9 lists the noise parameters for the packaged part as measured in a 50 Ω system. Table 9. Noise Parameters
Table 9. Noise Parameters (continued)
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two values of the external bias resistor at 350 MHz, 450 MHz, 900 MHz, and 1900 MHz. Figure 2. Constant Noise Figure and Gain Circles: 350 MHz
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Figure 5. Constant Noise Figure and Gain Circles: 1900 MHz 50 Ω system at four bias levels. Figure 6. Minimum Noise Figure and Associated Gain vs. Frequency at 25°C
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Figure 9 shows power out versus power in the 350 MHz application circuit at four bias levels. Figure 9. Output Power vs. Input Power for 350 MHz at 25°C Figure 10 shows power out versus power in the 900 MHz application circuit at four bias levels. Figure 10. Output Power vs. Input Power for 900 MHz at 25°C
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Figure 13. Supply Current vs. Input Power for 900 MHz at 25°C Figure 14. Supply Current vs. Input Power for 1900 MHz at 25°C
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4 Application Circuits
434 MHz, 900 MHz and 1900 MHz circuits is provided. Bill of Material for the circuits. losses and gain are similar for 350 MHz–370 MHz. Component L1 can be lowered to improve NF, by trading off S11 return loss. (without impacting NF or return losses). transceivers. Typical performance that can be expected from this circuit at 2.7V is listed in Table 10. Figure 16. 350 MHz–370 MHz Application Schematic
Table 10 provides the electrical characteristics for the 350 MHz–370 MHz application. Table 10. Typical 350–370 MHz Evaluation Board Performance
350 MHz
370 MHz
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Table 10. Typical 350–370 MHz Evaluation Board Performance (continued)
This application circuit was designed to provide NF = 2.3 dB, S21 gain > 27 dB for 434 MHz. Component L1 can be lowered to improve NF, by trading off S11 return loss. impacting NF or return losses). Figure 17 is the 434 MHz application schematic with package pinouts and the circuit component topology. Figure 17. 434 MHz Application Schematic Typical performance that can be expected from this circuit at 2.7V is listed in Table 11. Table 11. Typical 434 MHz Evaluation Board Performance
434 MHz
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Table 11. Typical 434 MHz Evaluation Board Performance (continued)
losses better than -10 dB at 900 MHz. Figure 18 is the 900 MHz application schematic with package pinouts and the circuit component topology. Figure 18. 900 MHz Application Schematic Typical performance that can be expected from this circuit at 2.7V is listed in Table 12. Table 12. Typical 900 MHz Evaluation Board Performance
900 MHz
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Table 12. Typical 900 MHz Evaluation Board Performance (continued)
Figure 19. 1900 MHz Application Schematic Table 13 provides the typical performance of a 1900 MHz application. Table 13. Typical 1900 MHz Evaluation Board Performance
1900 MHz
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Table 13. Typical 1900 MHz Evaluation Board Performance (continued)
5 Printed Circuit Board and Bill of Materials
drawings show the boards with the circuit matching components placed and identified. Figure 20. Printed Circuit Board Figure 21 is a picture of a typical assembled evaluation board similar to the ones in the evaluation kits. Figure 21. Typical Application Circuit Evaluation Board Note: Dimensions are in inches and [mm]. down to ground on the board.
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Figure 22. 350 MHz Application Board Drawing Figure 23. 434 MHz Application Board Drawing Figure 24. 900 MHz Application Board Drawing
Figure 25. 1900 MHz Application Board Drawing manufacturer and circuit function of each component is provided. Table 14. Bill of Materials for the Application Circuit Boards
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Table 14. Bill of Materials for the Application Circuit Boards (continued)
6 Packaging
Figure 26. Outline Dimensions for MLPD-6
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Figure 27. MLPD-6 Package Details
7 Product Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data. Definitions of these types are available at: http://www.freescale.com on the documentation page.
8 Revision History
Table 15. Revision History
1.0 Initial Release
MBC13917 Advance Information, Rev. 1.0 Freescale Semiconductor 39
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