MB05S DSK | Alldatasheet
Document overview
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Technical content
0.6 ±0.1 3.8 ±0.2 4.6 ±0.2 2.5 0.2 2.5±0.25 0.3±0.1 6.8±0.2 1.2± 0.2 1.0±0.15 Dimensions in millimeters
FEATURES
This series is UL recognized under Component Index, file number E239431 Glass passivated chip junctions Plastic materrial has U/L flammability classification 94V-O MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage V Maximum RMS voltage V Maximum DC blocking voltage V Maximum average forw ard output current @T A =25 P eak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage @ 0.4 A V Maximum reverse current @T A =25 μA at rated DC blocking voltage @T A =100 mA Typical junction capacitance per leg (NOTE 3) pF Operating junction temperature range Storage temperature range (3) Measured at 1.0 MHz and applied rev erse v oltage of 4.0 Volts T STG T J V RRM 0.51) 0.82) C J I R V F I FSM I F(AV) 35.0 V DC V RMS 1000 70 140 280 420 560 700 400 SILICON BRIDGE RECTIFIERS Saves space on printed circuit boards Weight: 0.0078 ounce, 0.22 gram Polarity: Polarity symbols marked on body Dimensions in inches and (millimeters) Case: Molded plastic body over passivated junctions Terminals: Plated leads solderable per MIL-STD-750, Method 2026 High surge overload rating: 35A peak High temperature soldering guaranteed: Mounting Position: Any 260°C/10 seconds at 5 lbs. (2.3kg) tension VOLTAGE RANGE: 50 --- 1000 V CURRENT: 0.5 A 5.0 MB05S - - - MB10S 1000 1.0 50 100 200 A MB05S MB1S MB2S MB4S MB6S MB8S MB10S 0.5 - 55 ---- + 150 - 55 ---- + 150 A 800 800 600 TO-269AA 50 100 200 400 600 Typical thermal resistance per leg (NOTE 1) R θJA 85 (NOTE 2 ) RθJL 20 Diode Semiconductor Korea www.diode.kr
.4 1.0 2 100 4 10 20 40 100 f=1MHz T J =25 0.1 0.01 1.4 1.2 T J =25 PULSE WIDTH=300 µ S 11 0 1 0 0 5.0 T A SINGLE HALF SINE-WAVE (JEDEC Method)
1.0 CYCLE
f=60Hz f=50Hz .01 0.1 1.0 10080604020 100 T J =25 T J =125 RESISTIVE OR INDUCTIVE LOAD GLASS EPOXY P.C.B. 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 30 60 90 120 150 FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER LEG PEAK FORWARD SURGE CURRENT, AMPERES AMPERES MICRO AMPERES FIG.1 -- DERATING CURVE FOR OUTPUT R RECTIFIED CURRENT CAPACITANCE, pF AMBIENT TEMPERATURE, MB05S - - - MB10S FIG.4 -- TYPICAL REVERSE CHARACTERISTIC NUMBER OF CYCLES AT 50/60Hz REVERSE VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER BBBBBBB ELEMENT INSTANTANEOUS REVERSE CURRENT, INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS FORWARD CURRENT, AVERAGE FORWARD CURRENT, AMPERES FIG.3 -- TYPICAL FORWARD VOLTAGE KKKK CHARACTERISTICS PER LEG Aluminum Substrate www.diode.kr Diode Semiconductor Korea