MB88152

MB88152 FUJITSU | Alldatasheet

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DS04-29117-1EFUJITSU SEMICONDUCTOR DATA SHEET Spread Spectrum Clock Generator MB88152 nnnn DESCRIPTION MB88152 is a clock generator for EMI reduction. The peak of unnecessary radiation noise (EMI) can be attenuated by making the oscillation frequency slightly modulate periodically with the internal modulator. It corresponds to both of the center spread which modulates input frequency as Middle Centered and down spread which modulates so as not to exceed input frequency. nnnn FEATURES

• Input frequency : 20 MHz to 134 MHz
• Output frequency : 20 MHz to 134 MHz
• Modulation rate : – 0.5% , – 1.5% (Center spread), - 1.0% , - 3.0% (Down spread)
• Equipped with crystal oscillation circuit: Range of oscillation 20 MHz to 48 MHz
• Modulation clock output Duty : 40% to 60%
• Modulation clock Cycle-Cycle Jitter : Less than 100 ps
• Low current consumption by CMOS process : 5 mA@24 MHz (T yp-sample, no load)
• Power supply voltage : 3.3 V – 0.3 V
• Operating temperature : - 40 °C to +85 °C
• Package : SOP 8 pin nnnn PACKAGE 8-pin plastic SOP (FPT-8P-M02)

MB88152 has three kinds of input frequency, and two kinds of modulation type (center/down spread), total six line- ups. nnnn PIN ASSIGNMENT nnnn PIN DESCRIPTION Product Function MB88152-100 Frequency range from 20 MHz to 134 MHz, Down spread, No enable setting MB88152-101 Frequency range from 20 MHz to 67 MHz, Down spread, No modulation enable pin MB88152-102 Frequency range from 40 MHz to 133 MHz, Down spread, Enable setting MB88152-110 Frequency range from 20 MHz to 134 MHz, Center spread, No modulation enable pin MB88152-111 Frequency range from 20 MHz to 67 MHz, Center spread, Enable setting MB88152-112 Frequency range from 40 MHz to 133 MHz, Center spread, Enable setting Pin name I/O Pin no. Description XIN I 1 Crystal resonator connection Pin/clock input pin XOUT O 2 Crystal resonator connection Pin VSS ¾ 3G N D P i n SEL I 4 Modulation rate setting pin CKOUT O 5 Modulated clock output pin VDD ¾ 6 Power supply voltage pin FREQ/FREQ0 I 7 Frequency setting pin XENS/FREQ1 I 8 Modulation enable setting pin/frequency setting pin XIN XOUT VSS SEL XENS FREQ VDD CKOUT XIN XOUT VSS SEL FREQ1 FREQ0 VDD CKOUT MB88152-101, MB88152-102, MB88152-111, MB88152-112 MB88152-100, MB88152-110 MB88152 MB88152

Note : For XIN and XOUT pins, see “n CRYST AL OSCILLA TION CIRCUIT”. Pin Circuit type Remarks SEL FREQ FREQ0 FREQ1 XENS

• CMOS hysteresis input CKOUT
• CMOS output
• IOL = 4 mA

A latchup can occur if, on a CMOS IC, a voltage higher than VDD or a voltage lower than VSS is applied to an input or output pin2 or a voltage higher than the rating is applied between VDD and VSS. A latchup, if it occurs, significantly increases the power supply current and may cause thermal destruction of an element. When you use a CMOS IC, be very careful not to exceed the maximum rating. Handling unused pins Do not leave an unused input pin open, since it may cause a malfunction. Handle by, for example, using a pull- up or pull-down resistor. The attention when the external clock is used Input the clock to XIN, and don’t connect anything with XOUT you use the external clock. And please pay attention so that an overshoot and an undershoot do not occur to an input clock of XIN. Power supply pins Please connecting to the power supply terminal of this device by as lower impedance as possible from the current supply source. We recommend connecting electrolytic capacitor (about 10 mF) and the ceramic capacitor (about 0.01 mF) in parallel between VSS and VDD near the device, as a by - pass capacitor. Crystal Oscillator Circuit Noise near the XIN or XOUT pin may cause the device to malfunction. Design printed circuit boards so that electric wiring of XIN and XOUT and crystal resonator (or ceramic resonator) don’t intersect other wiring. It is strongly recommended that printed circuit board artwork that surrounds the XIN and XOUT pins with ground be used to increase the expectation of stable operation.

R f = 1 MW SEL XOUT XIN FREQ/FREQ0 XENS/FREQ1 M N L C.P . IDAC ICO PLL block

20 MHz to 134 MHz

When changing the pin setting, the stabilization wait time for the modulation clock is required. The stabilization wait time for the modilation clock takes the maximum value of Lock-Up time in “n ELECTRICAL CHARACTER- ISTICS”. Modulation enable setting Note : MB88152-100 and 110 do not have XENS pin. SEL modulation rate setting Note : The modulation rate can be changed at the level of the terminal. Frequency setting Note : MB88152-100 and 110 do not have FREQ pin. frequency setting Note : MB88152-101, 111, 102 and 112 have neither FREQ0 pin nor FREQ1 pin. XENS Modulation

0 Modulation enable

MB88152-101, 102, 111, 112

1 Modulation disable

SEL Modulation rate Remarks – 0.5% MB88152-110, 111, 112 Center spread - 1.0% MB88152-100, 101, 102 Down spread – 1.5% MB88152-110, 111, 112 Center spread - 3.0% MB88152-100, 101, 102 Down spread FREQ Frequency

20 MHz to 40 MHz MB88152-101, 111

40 MHz to 80 MHz MB88152-102, 112

33 MHz to 67 MHz MB88152-101, 111

66 MHz to 134 MHz MB88152-102, 112

MB88152-100, 110 0 1 33 MHz to 67 MHz 1 0 40 MHz to 80 MHz 1 1 66 MHz to 134 MHz

• Center spread Spectrum is spreaded (modulated) by centering on the input frequency.
• Down spread Spectrum is spreaded (modulated) below the input frequency. 3.0% -1.5% +1.5% Radiation level Input frequency Frequency Center spread example of – 1.5% (3.0% ) 3.0% -3.0% Radiation level Input frequency Frequency Down spread example of - 3.0%

nnnn ABSOLUTE MAXIMUM RATINGS (VSS = 0.0 V) WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. nnnn RECOMMENDED OPERATING CONDITIONS WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. Parameter Symbol Rating Unit Min Max Power supply voltage V DD - 0.5 + 4.0 V Input voltage V I VSS - 0.5 V DD + 0.5 V Output voltage V O VSS - 0.5 V DD + 0.5 V Storage temperature T ST - 55 + 125 °C Operation junction temperature T J - 40 + 125 °C Output voltage I O - 14 + 14 mA Overshoot ¾¾ VDD + 1.0 (within 50 ns) V Undershoot ¾ VSS - 1.0 (within 50 ns) ¾ V Parameter Symbol Pin Conditions Value Unit Min Typ Max Power supply voltage VDD VDD ¾ 3.0 3.3 3.6 V “H” level input voltage VIH SEL FREQ/FREQ0, XENS/FREQ1 ¾ VDD · 0.80 ¾ VDD + 0.3 V XIN 20 MHz to 100 MHz VDD · 0.80 ¾ VDD + 0.3 V 100 MHz to 134 MHz VDD · 0.90 ¾ VDD + 0.3 V “L” level input voltage VIL SEL FREQ/FREQ0, XENS/FREQ1 ¾ VSS ¾ VDD · 0.20 V XIN 20 MHz to 100 MHz V SS ¾ VDD + 0.20 V 100 MHz to 134 MHz V SS ¾ VDD + 0.10 V Input clock [Duty Cycle] TDCI XIN

20 MHz to 100 MHz 40 50 60

100 MHz to 134 MHz 45 50 55

Operating temperature Ta ¾¾ - 40 ¾ + 85 °C

nnnn ELECTRICAL CHARACTERISTICS (T a = + 25 °C, VDD = 3.3V) Parameter Sym- bol Pin Conditions Value Unit Min Typ Max Power supply current I CC VDD 24 MHz output No load capacitance ¾ 5.0 7.0 mA Crystal oscillation frequency fx XIN, XOUT Basic wave oscillation 20 ¾ 40 MHz 3rd over tone 40 ¾ 48 Input frequency f in XIN MB88152-100, 110 20 ¾ 134 MHzMB88152-101, 111 20 ¾ 67 MB88152-102, 112 40 ¾ 134 Output frequency f OUT CKOUT MB88152-100, 110 20 ¾ 134 MHzMB88152-101, 111 20 ¾ 67 MB88152-102, 112 40 ¾ 134 Output voltage VOH CKOUT H level output IOH = - 4 mA VDD - 0.5 ¾ VDD V VOL L level output IOL = 4 mA VSS ¾ 0.4 V Output through rate SR CKOUT 0.4 V to 2.4 V 0.4 ¾ 4.0 V/ns Output high impedance Z O CKOUT 20 MHz to 134 MHz ¾ 45 ¾W Output clock Duty Cycle T DCC CKOUT 1.5 V 40 ¾ 60 % Input capacitance C IN XIN SEL FREQ/ FREQ0 XENS/ FREQ1 Ta = + 25 °C VDD = VI = 0.0 V f = 1 MHz ¾¾ 16 pF Load capacitance C L CKOUT

20 MHz to 67 MHz ¾¾ 15

pF67 MHz to 100 MHz ¾¾ 10

100 MHz to 134 MHz ¾¾ 7

Modulation cycle F MOD CKOUT ¾¾ 12.5 ¾ kHz Lock-Up time T LK CKOUT ¾¾ 25 m s Cycle-cycle jitter T JC CKOUT No load capacitance ¾¾ 100 ps

nnnn CRYSTAL OSCILLATOR CIRCUIT The left side of figures below shows the connection example about general crystal resonator. The oscillation circuit has the built-in feedback resistanc (1 MW ). The value of cpacity (C1 and C2) is required adjusting to the most suitable value of an individual crystal resonator. The right side of figures below shows the example of connecting crystal for the 3rd over-tone oscillation. The value of capacity (C 1, C2 and C3) and inductance (L1) is needed adjusting to the most suitable value of an individual crystal oscillator. When an external clock is used (the crystal resonator is not used) , input the clock to XIN pin and do not connect anything with XOUT . nnnn DEFINITION OF JITTER C 1 R f (1 MW ) C 2 C 1 R f (1 MW ) C 2 C 3 XIN Pin XOUT Pin XIN Pin XOUT Pin Internal External Normal crystal oscillation 3rd over tone tn tn + 1

• Cycle-cycle jitter Output clock Cycle - cycle jitter is defined the difference between a certain cycle and immediately after (or, immediately before). TJC = |tn - tn + 1|

nnnn INTERCONNECTION CIRCUIT EXAMPLE MB88152 C1 C2 C4 C3 C1, C2 : oscillation stabilization capacitance (see "n CRYSTAL OSCILLATOR CIRCUIT”) C3 : Ta condenser or electrolytic capacitor of 10 mF or higher C4 : laminated ceramic capacitor about 0.01 mF (connect to close to this device) R1 : impedance matching resistor for board pattern SEL FREQ/FREQ0 XENS/FREQ1

Part number Frequency Spread XENS Package Remarks MB88152PNF-G-100-JNE1 20 MHz to 134 MHz Down No 8-pin plastic SOP (FPT-8P-M02) MB88152PNF-G-101-JNE1 20 MHz to 67 MHz Down Yes MB88152PNF-G-102-JNE1 40 MHz to 134 MHz Down Yes MB88152PNF-G-110-JNE1 20 MHz to 134 MHz Center No MB88152PNF-G-111-JNE1 20 MHz to 67 MHz Center Yes MB88152PNF-G-112-JNE1 40 MHz to 134 MHz Center Yes MB88152PNF-G-100-JN-EFE1 20 MHz to 134 MHz Down No 8-pin plastic SOP (FPT-8P-M02) Embos taping (EF type) MB88152PNF-G-101-JN-EFE1 20 MHz to 67 MHz Down Yes MB88152PNF-G-102-JN-EFE1 40 MHz to 134 MHz Down Yes MB88152PNF-G-110-JN-EFE1 20 MHz to 134 MHz Center No MB88152PNF-G-111-JN-EFE1 20 MHz to 67 MHz Center Yes MB88152PNF-G-112-JN-EFE1 40 MHz to 134 MHz Center Yes MB88152PNF-G-100-JN-ERE1 20 MHz to 134 MHz Down No 8-pin plastic SOP (FPT-8P-M02) Embos taping (ER type) MB88152PNF-G-101-JN-ERE1 20 MHz to 67 MHz Down Yes MB88152PNF-G-102-JN-ERE1 40 MHz to 134 MHz Down Yes MB88152PNF-G-110-JN-ERE1 20 MHz to 134 MHz Center No MB88152PNF-G-111-JN-ERE1 20 MHz to 67 MHz Center Yes MB88152PNF-G-112-JN-ERE1 40 MHz to 134 MHz Center Yes

(FPT-8P-M02) Note 1) *1 : These dimensions include resin protrusion. Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder. Dimensions in mm (inches). Note : The values in parentheses are reference values. C 2002 FUJITSU LIMITED F08004S-c-4-7 1.27(.050) .199–.008 +.010 –0.20 +0.25 5.05 0.13(.005)M 0.10(.004) 0.44±0.08 (.017±.003) –0.07 +0.03 0.22 .009 +.001 –.003 45˚ 0.40(.016) "A" 0~8˚ 0.25(.010) (Mounting height) Details of "A" part 1.55±0.20 (.061±.008) 0.50±0.20 (.020±.008) 0.60±0.15 (.024±.006) 0.15±0.10 (.006±.004) (Stand off) 0.10(.004)

All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Fujitsu assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of Fujitsu or any third party or does Fujitsu warrant non-infringement of any third-party’s intellectual property right or other right by using such information. Fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan. F0311 ª FUJITSU LIMITED Printed in Japan