MB85R256 FUJITSU | Alldatasheet
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DS05-13101-3EFUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM CMOS MB85R256 nnnn DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM MB85R256 is able to retain data without back-up battery. The memory cells used for the MB85R256 has inproved at least 10 10 times of read/write access per bit, significantly outperforming FLASH memory and EEPROM in durability. The MB85R256 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM. nnnn FEATURES
- Bit configuration: 32,768 words x 8 bits
- Read/write durability: 1010 times/bit (Min)
- Peripheral circuit CMOS construction
- Operating power supply voltage: 3.0 V to 3.6 V
- Operating temperature range: -40 °C to +85 °C
- 28-pin, SOP flat package
- 28-pin, TSOP(1) flat package nnnn PACKAGES 28-pin plastic SOP 28-pin plastic TSOP(1) (FPT-28P-M17) (FPT-28P-M03)
I/O0 to I/O7 Data input/output CE Chip enable input WE Write Enable input OE Output enable input VCC Power supply ( + 3.3 V Typ) GND Ground A A12 I/O0 I/O1 I/O2 GND VCC WE A13 A11 OE A10 CE I/O I/O6 I/O5 I/O4 I/O3 22 21 A14 A12 A3 A2 I/O0 I/O1 I/O2 GND VCC A13 A11 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 WE OE (TOP VIEW) (FPT-28P-M17) (FPT-28P-M03)
H: High level, L: Low level, x: Irrespective of “H” or “L” Operation mode CE WE OE I/O7 to I/O0 Power supply current Standby precharge H · · High-Z Standby (ISB ) · LL Latch address L ¾¾ Write L L H Data input Operation (ICC ) Read L H L Data output Output Disable · HH H i g h - Z A14 to A10 A7 to A0 A8, A9 CE WE OE I/O0-I/O7 A14 to A0 Row de- coder Address latch FRAM array: 32,768 x 8 Block decoder Column decoder Control logic I/O latch bus driver Pseudo-SRAM interface logic circuit I/O7 to I/O0
nnnn ABSOLUTE MAXIMUM RANGES WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. nnnn RECOMMENDED OPERATING CONDITIONS WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. Parameter Symbol Rating Unit Min Max Power supply voltage V CC - 0.5 + 4.6 V Input voltage V IN - 0.5 V CC + 0.5 V Output voltage V OUT - 0.5 V CC + 0.5 V Operating temperature T A - 40 + 85 °C Storage temperature Tstg - 40 + 85 °C Parameter Symbol Value Unit Min Typ Max Power supply voltage V CC 3.0 3.3 3.6 V High level input voltage V IH 0.8 · VCC ¾ VCC + 0.5 V Low level input voltage V IL - 0.5 ¾ + 0.6 V Operating temperature T A - 40 ¾ + 85 °C
nnnn ELECTRICAL CHARACTERISTICS 1. DC Characteristics (within recommended operating conditions) 2. AC Characteristics (1) Read cycle (within recommended operating conditions) Parameter Symbol Conditions Value Unit Min Typ Max Input leakage current | ILI |V IN = 0 V to VCC ¾¾ 10 mA Output leakage current | ILO | VOUT = 0 V to VCC , CE = VIH or OE = VIH ¾¾ 10 mA Operating power supply current ICC CE = 0.2 V, Other Inputs = VCC - 0.2 V/0.2 V, tRC (Min), Ii/o = 0 mA ¾ 51 0 m A Standby current I SB CE ‡ VCC ¾ 51 0 0 mA High level output voltage VOH IOH = - 100 mA0 . 8 · VCC ¾¾ V Low level output voltage VOL IOL = 1.0 mA ¾¾ 0.4 V Parameter Symbol Value Unit Min Max Read cycle time t RC 235 ¾ ns CE active time t CA 150 10,000 Read pulse width t RP 150 10,000 Precharge time t PC 85 ¾ Address setup time t AS 0 ¾ Address hold time t AH 25 ¾ CE access time t CE ¾ 150 OE access time t OE ¾ 150 CE output floating time t HZ ¾ 25 OE output floating time t OHZ ¾ 25
(2) Write cycle (within recommended operating conditions) (3) Power ON/OFF sequence (within recommended operating conditions) 3. Pin Capacitance 4. AC Characteristics Test Condition Power supply voltage : 3.0 V to 3.6 V Input voltage amplitude : 0.3 V to 2.7 V Input rising time : 10 ns Input falling time : 10 ns Input evaluation level : 2.0 V/0.8 V Output evaluation level : 2.0 V/0.8 V Output load : 100 pF Parameter Symbol Value Unit Min Max Write cycle time t WC 235 ¾ ns CE active time t CA 150 10,000 Write pulse width t WP 150 10,000 Precharge time t PC 85 ¾ Address setup time t AS 0 ¾ Address hold time t AH 25 ¾ Data setup time t DS 50 ¾ Data hold time t DH 0 ¾ Write set up time t WS 0 ¾ Write hold time t WH 0 ¾ Parameter Symbol Value Unit Min Typ Max CE LEVEL hold time at power OFF tpd 85 ¾¾ ns CE LEVEL hold time at power ON tpu 85 ¾¾ ns Power interval tpi 1 ¾¾ m s Parameter Symbol Conditions Value Unit Min Typ Max Input capacitance C IN VIN = VOUT = GND, f = 1 MHz, TA = + 25 °C ¾¾ 10 pF output capacitance C OUT ¾¾ 10 pF
- Read cycle (CE Control) 2. Read cycle (OE Control) CE OE I/O7 to I/O0 A14 to A0 WE Valid Valid : Don't care. Valid High-Z High-ZValid tRC tCA tAS tAH tPC tCE tOE tOHZ tHZ tPC tPC tPC tAS tAH tRP tRC “H” level CE OE I/O7 to I/O0 A14 to A0 WE Valid Valid Valid High-Z High-ZValid tRC tCA tAS tAH tPC tCE tOE tOHZ tHZ tPC tPC tPC tAS tAH tRP tRC : Don't care. “H” level
- Write cycle (CE Control) 4. Write cycle (WE Control) CE OE A14 to A0 WE Data In Valid Valid : Don't care. Valid Valid tW C tCA tAS tAH tDS tDH tPCtPC tPCtWH tWS tWH tWStPC tAS tAH tDS tDH tWP tWC “H” level CE OE A14 to A0 WE Data In Valid Valid : Don't care. Valid Valid tW C tCA tAS tAH tDS tDH tPCtPC tPCtWH tWS tWH tWStPC tAS tAH tDS tDH tWP tWC “H” level
nnnn POWER ON/OFF SEQUENCE nnnn NOTES ON USE After IR reflow, the hold of data that was written before IR reflow is not guaranteed. nnnn ORDERING INFORMATION Part number Package Remarks MB85R256PF 28-pin, plastic SOP (FPT-28P-M17) MB85R256PFTN 28-pin, plastic TSOP(1) (FPT-28P-M03) tpd tpi tpu CE > VCC · 0.8*CE : Don't CareCE > VCC · 0.8* CE CE VCC 3.0 V VIH (Min) 1.0 V VIL (Max) 0.2 V GND VCC 3.0 V VIH (Min) 1.0 V VIL (Max) 0.2 V GND * : CE (Max) < VCC + 0.5 V
(Continued) 28-pin plastic SOP (FPT-28P-M17) Note 1) *1 : These dimensions include resin protrusion. Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder. Dimensions in mm (inches). Note: The values in parentheses are reference values. C 2002 FUJITSU LIMITED F28048S-c-3-4 .699–.008 +.010 –0.20 +0.25 17.75 1.27(.050) 8.60±0.20 (.339±.008) 11.80±0.30 (.465±.012) M0.13(.005) 1528 0.10(.004) 0.47±0.08 (.019±.003) INDEX "A" –0.04 +0.03 0.17 .007 +.001 –.002 0~8˚ 0.25(.010) Details of "A" part (Mounting height)2.65±0.15 (.104±.006) 0.20±0.15 (.008±.006) (Stand off) 0.80±0.20 (.031±.008) 0.88±0.15 (.035±.006)
(Continued) 28-pin plastic TSOP(1) (FPT-28P-M03) Dimensions in mm (inches). Note: The values in parentheses are reference values. C 1997 FUJITSU LIMITED F28018S-5C-3 Details of "A" part 0.15(.006) MAX 0.35(.014) MAX INDEX "A" LEAD No. 11.80±0.20 (.465±.008) 13.40±0.20 (.528±.008) 12.40±0.20 (.488±.008) 0.10(.004) 0.50±0.10 (.020±.004) 0.15±0.05 (.006±.002) 0.55(.0217) TYP 0.20±0.10 (.008±.004) M0.09(.004) 7.15(.281)REF 8.00±0.20 (.315±.008) 0(0)MIN (STAND OFF) .043–.002 +.004 –0.05 +0.10 1.10 (Mounting height)
All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Fujitsu assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of Fujitsu or any third party or does Fujitsu warrant non-infringement of any third-party’s intellectual property right or other right by using such information. Fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan. F0404 ª FUJITSU LIMITED Printed in Japan