MB83512-15 FUJITSU | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

MOS Memories ¥ FUJITSU HB MB83512-15 CMOS 524,288-Bit Mask-Programmable Read Only Memory DO

Description

nermmennesscossamememrean — FETE static iz0d a5 65,596 words reac ly memory organi as by 8-bits. CECE eer ‘The MBB3512 has TTL-compatible /O and TRI-state output level [TTT Tae with fully-static operation (Le. no need of clock signal) and single (TT Td bal | +5V power supply. The device is designed for applications such as Ct te ‘i character generator or program storage which require large mem- my | Sty capechy and gh specatoncpons Sperton Cig ee ‘The MB83512 is packaged in a 28-pin dual-in-line package and its Ls th yee pin-out is compatible with standard 26-pin EPROM HH Hee tf Features | pwp-ztpoe [| | | ‘see eee | OO consumption: '& Fast access time: mW (Operation) rTiTtyt Ssone met {6.8 mw (Standby, TL Seeeee

1 Complete static operon: | Input leva) ree eer ee

= DIP ee see BREET HEH [TTT TTT ry PTT rrr yy LTT Terry rr TTT TT yyy yy [TT TTT ryt [TT TT yy Ty ty CEPT TT ry rr eee LTT T tT yt ‘ia vie contain ety 1 LTT TTr yyy seams we cous voarmtcomege PTT TTT TT rete now readied = | TTT TTT TT os epacr ant LTT Ty Tyr ye SSS | EHEEEH

a MB83512-15 Block Diagram ‘and Pin Assignment hs —— asthe zal] vec a au Ge nD Aw iM ~ ©) Ean a : ae Para Xt —Zlaponess|:) now 65.596 x 080TS E-0E |s oe ts a) "SurrER |*_|oecoben|? | now cei amar toa as 24) As & ate aflan hee oF x - er a Ao 7 | aCe aD] Aw an acs we an — ao 10 Dov as a j ods 1819 vs VT T os 16D os 10103 01040 04 Or Oo ves 4 sf 0 TRUTH TABLE [_s [ae | me _| ae A ‘ourpur | CONSUMPTION MODE (iL [aeeeceren | ane [vee | ; [fe | siesieoTouror [tere | Absolute Maximum Ratings (See Note) Rati Symbol Vawue Unit Storage temperature range Tera 45 to +125 *C Temperature under bias © Teas —10 to +85 °C ‘Supply voltage Voc “03 t0 47.0 Vv a | Input voltage Vin 06 to Voc + 0.5 Vv ‘Output voltage Vout 705 10 Voc + 0.5 v Note: Permanent device damage mey ona ABSOLUTE MAXIMUM RATINGS are exceeded. Funciona! operation shou be resets 9 sete, Titans as dntalod Bre oporaoral sacions cl tis Gta shee. Exposure to boule mami ating conaiion fo" extencee pera0s tray aot deco rebsty (Ty = 25°C, f = 1 MHz) Parameter, Symbol__ Min Typ Max unit Output Capacitance (Vouy = OV) Cour 10 oF Input Capacitance (Viy = OV) Ow 7 pF Recommended Operating Conditions (Reference to GND) Paramotor Symbol Min Tye Max Unit ‘Supply voltage Voc 45 5.0 55 v input low voltage Vic 03) 08 v input high voltage Vow 22 Voc + 03 Vv ‘Ambient temperature Th o 70 —_ are

DC Characteristics MBE3512-45 (Recommended operating Parameter Test Conditions Symbol __Min__Max___Unit Parameter ____ Test Conditions Syme Ee Gordons unless these Siaraby suppiycuven —_E = Vin Tes 3 mA E = Voc, Vy = GND oF Voc Tsp2 50 BA ‘Active supply current E = Vic. minimum cycle leo 40 mA Input leakage current Viv = OV to Veg lo =10 10 BA ‘Ouiput leakage current = Vix, or OF — Vay ho “1010 HA ‘Output high voltage Tou = ~400 pA Vou 24 Vv Output iow voltage lo = 21 mA Vou 04 Vv AC Characteristics MBS83519-15 (Recommended operating Parameter Symbol Min Typ Max Unit conditions unless otherse fl en a a noted) ‘Address access time (E = OF = Vi) tace 150 ns Chip enable access time (OE = Vi) te 150 ns ‘Guutput enable access time" tor 80 ns ‘Output cisable time’? Toe 60 18 Output hold time tow ° ns Notes: +1 OE may be delayed wo (tage ~ tog) aor ltng edge ot E wihout impact on tac: “2 tog specteg tom OE or E. whinever occurs eater Timing Diagram moomess ee: toe"? toe"! fa = oe CEE orm) ANN: NOTES: “1 OE MAY BE DELAYED UP TO (tac ~ tog) AFTER THE FALLING EDGE OF E WITHOUT IMPACT ON t “2 lor IS SPECIFIED FROM OE OR E, WHICHEVER OCCURS EARLIER.

"3 je ee y a b; i 188 58 rh qi if | : i t seo gy Fa q p) |S i ab ¢ e 2 i i AL