MB7117H FUJITSU | Alldatasheet
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FUJITSU MICROELECTRONICS 78 a | 3749762 0003760 0 B t4c-13-2 Bipolar Memories FUJITSU @ MB7117E/H, MB7118E/H Schottky TTL 2048-Bit Bipolar Programmable Read-Only Memory ARE gh STE ARAL LEE EESTI ETE GAT OUT BIH UL INFLATE RASH IT PD Sos unt, by bas’ Wan onsoomedted cotecter culgem provises HE on Pro MO7117 and Peeo-sate culputs on the MBTI1E mamary ex- TTL Dewi cnsraume renga | CTD <a GEAPT™Y (Citiuned Eutacte Alurrinum Process) accorcing to simple Ha “A ‘At Programming croceaures. ce (liven ‘The sophisticated osssive isotation termed IOP (isolation by Oxide mash a T_] perneits erinimal chip ize and fast access Ime. Eetaah phohes an Exra test cots and unique tating methods provide enhanced cor: pie-2oerop | | | Resta be arogereng ort mpm Th SauaaneuEe ra veer ettommemnime LED gh Bites, tay decoded RAS nsec max. ar hiae ee ee et saiwaetin’ = Strom EE num Process) Mery7 @ Simpétied, low power fm Three-stete outputs, marie = |_Jolpabewaga | | | | ‘nose, isaseee Ge age end Yempersture range = @ — JEDEC approved pin out TTT TAL a ao eS _ | “i af 7 tebdedede tT tty ity. un Sees ae Cheer rr 10-43
FUJITSU MICROELECTRONICS 78 rs | 3749?b2 ODO37b)1 2 | 'T- 46-13-25 MBTIITEW MBTI1CE/H MB7117E/M, MBTIICEH Block Diagram end Pin at TD b iriect a0 an A om Al aly a» 20 of MO a0 lt * scones oO hurr * oe ourress at Lo te on Co a 1 a co ool Lj i = ee
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figs 0 ala? [a] ae we enane = ee i oy mee ole: Tor view 10) 556286 5 oF i578 OO % O% & Om % = ALES oye felrol wives} Oy GND Oy Os Oy Absolute Maximum Ratings — Power oupply votage Vee 0.50 +70 v Power supply voltage (cruing programming} Ves ~0.8 % 47.6 v brent vorage Vu ~1.6 to +65 v Ingat vokage (during programming) Vena 226 v Output voltage {curing programming) Venn 0510 4225 v Inpet current be -20 mA Ineat current (during progracnrring) bao +270 mA Output curent lout +100 mA Output current (during Programming} bong +160 mA Ceramic t ~68 © +160 ~ Storage temporary Ste sro =40 to +128 Gumpert voting Now Oe Mate: Parraret device duteps may ccow t ARSOLUTE MACMN RATINGS are socanded, Functanad operstion saad be smvvicted to eH wb tae’) he apwreone sectors of i Gata stew, Te Gevice corunina GrOMrY '0 Geclnct Tw WgMts epWnat darnage Gun 10 PGT We VORD IN & GaKRIC SAN, Hovenwes Bie ONE Tal forma! ERE ROT Oo UREN 9D Sold APORCEION Of any WoRAge Nghe’ Can CreertET ated wategee to tis hep) Hromianes cham, PusITSU 1 10-64
— ns —_ FUJITSU MICROELECTRONICS 78 DEP} 374972 GOO37L2 4 § T12-13-26 OE ~ — | MB71170/H MB71I8E/H Guaranteed Operating | Conditions Paramoter Symbol Mie ve. Max Unit Surety woRage Nog SG Woatowvemee MO input tigh wottege Vn 20 $5 v Aarbiont teneorature Wo 0 1% c (= SMEG, Ver = 5 SM Parameter Symbol Min Tye. Max Unit Vas = +N, Ty = 25°C} input capactance Ca - 10 a Oulpyt capacitance fo . ; 12 oF seneay ene moreso Weeat wahage curren (py = 5.5V) a 0 A irene ioed errent (Vy = 0.45¥) & 250 BA Cutput low voltage {ha = 10mA) Vou 4s Output how voltage flog + 16mA) Vou a Gasp Hoakage current (Vo = 2.4V. ip Qeablodd METI Na oA Cutput leakage currant (Vo = 24¥, chip cieabled) MB7I¥8 boy © oA ‘Cutput leakage current (Vq ~ O4SV. chip disabled) MB711@9 log =40 pA : Power wooly covet Vig = OPEN GP OND) toe Grip high vonge fo <24A) MO Vet Output shor clrcull current (Vo = GND) MOTE fos 15 =60 mA tm “1 ponte purne rece © e maps tte neon. rans «bay are ernanes (Fut quarameed operating Mnrsien, ; Marien cacy ne ereiee Parometer Symbot Typ Max Typ Max unit Access time (va addraus ingnf) bya 2s 45 ss Ouiput daatia tine os 0 ES) 16 Quin eratio time lew % x» " 10-45
FUJITSU MICROELECTRONICS 7&6 DER Se4i¢bc UUUS(bS & T+ ¥6-13°25° Es #8 = =~ MBTIITEH MBTItGEH Operation Timing Diagram vn = + cue t oy mune wt \\ re I tas —_ tw rd a: ovreut eee te Ve came rd ed nur PF i ‘on tee ovreut uw an vo ‘ HOTS: OUTPUT OGASLE Dest IS THE TIVE TAKEN FOR THE OUTPUT TO REACH AGG Cutput tame Tse is bee hve Dee FOR THE OuTrut TO Bos Cee ACTIVE AC Tost Conditions : Input Conditions Vee Aereltude: OV to BV Rise and Fafi Teme: 69s from 1V to 2V Frequency: Wht: a) * 5 at estert oe aT is | tae | sooe | ewe | soo | FUJITSU ‘ 10-46
FUJITSU MICROELECTRONICS 7& DE 37497b2 OO037L4 8 Hh T- 40-13-25 GRE MB71178/4 MB7110E/H eee Clrowlt Information teput Circutt Also in the culput orcult, iso provided In the output Grout TiLerwit ss Scrwnky TTL chow technology is and is effoctive in ceoreasing o Schottky leactony 690d 10 achieve Mgh-epeed foad for tho Chip Enable crout. used in the input drei to operation. A PNP wanslstor & sree ne raph epend cenceson. A PNP transister in the frst stogo Of Hye input ckodl Improves int = MIB7117/MB7116 Input Circuit remarkodty. The input drcut ¥ includes a protection diode for * retable operazon. Open Collector Output often high-speed our applications where power 2) Gasipation must Oe minkrizec. : When the device it switched, there is ro current sourced fom the supply rai Consequerity, the - CET cama aneociated totom-pole outputs MB7117 Output Cireult eliminated. ih High-frequency applications, tis mikimzes noise Orobiems {lalse triggering) as wel a5 power drain. For examplo, the reralert currert (how impedance hignlevel to low Impedance tow-level) is typically SomA for the MBI1IG {three- Stata) Compared 10 OMA fox the ournyt M6711? (open-colector). ‘Throo State Output A “Peee-wate” cutpul is & logic erate aeee bat Rate Satnes outpul states of ZERO, od OFF {wherain OFF represents MB7116 Output Ciroult high-impedance candiion wich Can neither siek nor source Vee Gurren 8) 4 definable ogc level). Etoctively, Den, the device has . at the cesirable teatwes of totem pole TTL output (e.g. weeter nolse lnemunity, good rise time, ine diiving capacity), plus the abilty to connect to Dus- ourpyt organized systems. In the cane where two devices . are On al the Same Me, the __ PossRilty exists that they may be =
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simultaneously, hus, the short Growl current trom one enacted Govice may Now trough the other enabled Gavice. While phryvios! damage under these conditions is urikety, system reine problems could result. Therolore, the sites designer should consider thee tactors to . Craure that this condition doses Not exist, 10-47
FUJITSU MICROELECTRONICS 74 DER 3749?be 0003765 D | | T4G13B-2S ESV t”*S . MB7II7E/" MBTIISEH Secs nerertertotion =a input Ourvent hase Input Current v8. Ves Input Voltage V8. Vin Input Voltage fer TTT ee ao | ans? al i | ERTL i._.| Bees nl | OB TTT a qo : We PUT VOLTAGE (Y) Vee OPT VOL TAO (Y) lq, Output Low Current ton Output High Current vs. Vo. Output Low Voltage v8. Voy Output High Voltage o wef | dese | tt Pt / as an we 7 ee : 5 ae : BAPE LL TAL jer | ett i tt Vox, OUTPUT LOW VO. TAGE (na) Voss OUTPUT P9GN CURRENT (#) tg, Aceess Time ty, Access Timo vs. Ambient Temperature va. Ambiont Tempersture ” - — nr “+444 wt Ty ge a |_| ret | Fwl_| | | 1.1 Vv an | 1-HATT 4 | Lae 3 || , == HERA) = HEF te o » v8 Ld . » ‘Te, AMOIENT TEMPERATURE ( Cc) ‘Th. AMBIENT TEMPERATURE (°C a 10-48
FUJITSU MICROELECTRONICS 78 DEM 37447be OOO37LE & GE ty¢./3-25 Mie MBT1I7E/K MBTIIOEM Typical Characteristics Curves tog Disable Time tong Disable Time (Coetinved) vs. Ambient Temperature vs. Ambient Temperature ~ n et ti dt wot TTT yy rt ttt tit : “id ps | yop i i] | i} me | qd | ee Gat | ere 4 3 aaB Za ee § | 14 wens | 4 Sey’ — — mM —— a LLL ven | EL TT i Ta, AMIMENT TEMPERATURE (C) : Tp, AMONEMT TEM@ ERATURE ( <} Se! Antlent Temperature a! Ambient Temperature » ” “tf ja ae “+H a ret | | ret jt es qf || de Coe aco Lit tf Lit tt | ‘Ta AMMEN TEMPERATURE (°C) te. MODENT TEMPERATURE 1 Delay Time Incresse Delay Time increase ve. C. Load Capacitance ve. C, Lond Cepecitance ” ” eee wt td Td ee i Hot tot tt t ++44++H eae bo| een | PtP NA] PID ieee "Cer aa NNee eh (ee ame ‘ we -™m “ ° ™ = = Sy. LOAD CAPACITANCE @) Cy. LOAD CAPACITANCE WAL 10-49
FUJITSU MICROELECTRONICS 78 ve 3749?b2 OOO37b? 3 | TY6-13-2F mp7117684 MB7110E/H PackagoDimonsions—~—SCO*=~C~sSsSSSSSS Omonsices in inches 20-Pin Cordip Dual In-Line Packege (rilierators} 1P.200-CO1 A =.=. ; ~ . ta sa aT 028 lag igi yy" Li i | | J ssa 20-Pin Plastic Ouol In-Line Package DIP.20P.mMoz Pririfiri ri rir rel bow Sr eit ee ot were | [J YUU eg 7mmR er) ae ATE MA } eas sy | 190.0 wre a 10-60
FUJITSU MICROELECTRONICS 78 DE 3749742 000378 s MF T4613. 25 iii #8=8= MBTII7EH MBTIICENN SA | RIT STIRS yt memo (rritiereters) aa Vm \\ | TOUTS id rere) = — Te. — = = = = - } | AUDA DAE Ear lee! mar ~ me So [bwewr!| i) “are id 10-51