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MB2M, MB4M, MB6M www.vishay.com Vishay General Semiconductor Revision: 16-Aug-13 1 Document Number: 88660 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Miniature Glass Passivated Single-Phase Bridge Rectifiers

FEATURES

  • UL recognition, file number E54214
  • Ideal for printed circuit boards
  • Applicable for automative insertion
  • High surge current capability
  • Solder dip 275 °C max. 10 s, per JESD 22-B106
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballas ter, battery charger, home appliances, office equipment, and telecommunication applications. MECHANICAL DATA Case: MBM Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Notes (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads PRIMARY CHARACTERISTICS Package MBM IF(AV) 0.5 A VRRM 200 V, 400 V, 600 V IFSM 35 A IR 5 μA VF at IF = 0.4 A 1.0 V TJ max. 150 °C Diode variations Quad Case Style MBM MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MB2M MB4M MB6M UNIT Device marking code 2 4 6 Maximum repetitive peak reverse voltage V RRM 200 400 600 V Maximum RMS voltage V RMS 140 280 420 V Maximum DC blocking voltage V DC 200 400 600 V Maximum average forward output rectified current (fig. 1) on glass-epoxy PCB (1) IF(AV) 0.5 A on aluminum substrate (2) 0.8 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 35 A Rating for fusing (t < 8.3 ms) I 2t5 . 0 A 2s Operating junction and storage temperature range T J, TSTG - 55 to + 150 °C

MB2M, MB4M, MB6M www.vishay.com Vishay General Semiconductor Revision: 16-Aug-13 2 Document Number: 88660 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads RATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted) Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL MB2M MB4M MB6M UNIT Maximum instantaneous forward voltage per diode IF = 0.4 A V F 1.0 V Maximum DC reverse current at rated DC blocking voltage per diode T A = 25 °C IR 5.0 μA TA = 125 °C 100 Typical junction capacitance per diode 4.0 V, 1 MHz C J 13 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MB2M MB4M MB6M UNIT Typical thermal resistance R JA (1) 85 °C/W RJA (2) 70 RJL (1) 20 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g ) PREFERRED PACKAGE CODE BA SE QUANTITY DELIVERY MODE MB2M-E3/45 0.22 45 100 Tube 0 20 40 60 80 100 120 140 160 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Aluminum Substrate Glass Epoxy PCB Resistive or Inductive Load Average For ward Rectified C urrent (A) Ambient Temperature (°C) 1 10 100 f = 60 Hzf = 50 Hz TA = 40 °C Single Half Sine-Wave Number of Cycles Peak For ward S urge C urrent (A)

1.0 Cycle

MB2M, MB4M, MB6M www.vishay.com Vishay General Semiconductor Revision: 16-Aug-13 3 Document Number: 88660 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Typical Forward Voltage Characteristics Per Diode Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.01 0.1 TJ = 150 °C TJ = 25 °C Instantaneous Forward Voltage (V) Instantaneo us For ward C urrent (A) Pulse Width = 300 µs 1 % Duty Cycle 0 20 40 60 80 100 0.01 0.1 100 TJ = 125 °C TJ = 25 °C Percent of Rated Peak Reverse Voltage (%) Instantaneo us Re verse Leakage Current (µA) 0.1 1 10 100 1000 Reverse Voltage (V) Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.106 (2.70) 0.137 (3.48) 0.161 (4.10) 0.144 (3.65) 0.190 (4.83) 0.179 (4.55) 0.029 (0.74) 0.017 (0.43) 0.105 (2.67) 0.095 (2.41) 0.205 (5.21) 0.028 (0.71) 0.020 (0.51) 0.016 (0.41) 0.006 (0.15) 0.148 (3.75) 0.132 (3.35) 0.049 (1.24) 0.039 (0.99) Case Style MBM