MB40C950VPFQ

MB40C950V FUJITSU | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 17

Technical content

DS04-28318-2EFUJITSU SEMICONDUCTOR DATA SHEET ASSP CMOS

85 MSPS 3ch 10-bit

The MB40C950V is a high-speed CMOS process-based D/A converter provided with the three-channel I/O for RGB, allowing for independent control of the three channels. n FEATURES

• Resolution : 10 bits
• Linearity error : –1.5 LSB (max)
• Differential linearity error :–1.0 LSB (max)
• Maximum conversion rate : 85 MSPS (min)
• Supply voltage : single +5 V
• Digital input voltage range : TTL level
• Analog output voltage range : 2 Vp-p (0 to 2V: analog output for RL = 200 W , R REF = 3.3 kW , VRIN = 2V) : 1 Vp-p (0 to 1V: analog output for RL = 75 W , RREF = 2.4 kW , VRIN = 2V)
• Dissipation power : 240 mW (standard: analog output for RL = 200 W , 2 Vp-p output) : 310 mW (standard: analog output for RL = 75 W , 1 Vp-p output)
• Additional capabilities : Power saving function, independent 3-ch VREF
• Package : LQFP64, QFP64 n PACKAGES 64-pin Plastic LQFP (FPT-64P-M03) 64-pin Plastic QFP (FPT-64P-M10)

(TOP VIEW) RV B N.C. N.C. (LSB) R R 1 R 2 R 3 R 4 R 5 R 6 R 7 R 8 (MSB) R9 N.C. (LSB) G0 G 1 G 2 G 3 G 4 G 5 G 6 G 7 G 8 (MSB) G9 N.C. N.C. N.C. N.C. (LSB) B BV RIN BV B N.C. N.C. BCLK GCLK RCLK VA DV SS N.C. B 9 (MSB) RIREF RV RIN DV DD CE AV DD R OUT AV SS G OUT AV SS BOUT AV DD GIREF GV B GV RIN N.C. BI REF LQFP64

(TOP VIEW) RI REF RV B N.C. N.C. (LSB) R0 R 1 R 2 R 3 R 4 R 5 R 6 R 7 R 8 (MSB) R9 N.C. N.C. N.C. (LSB) G G 1 BI REF BV RIN BV B N.C. BCLK GCLK RCLK VA DV SS N.C. N.C. N.C. N.C. B 9 (MSB) RV RIN DV DD CE AV DD R OUT AV SS G OUT AV SS BOUT AV DD GIREF GV B GV RIN G G 3 G 4 G 5 G 6 G 7 G 8 (MSB) G9 N.C. (LSB) B0 QFP64

Pin No. Symbol I/O Description LQFP64 QFP64 4 to 13 15 to 24 29 to 38 5 to 14 18 to 27 29 to 38 R 0 to R9 G 0 to G9 B0 to B9 I Data signal incoming terminal for Rch, Gch and Bch LSB: R0, G0, B0 MSB: R9, G9,B9 RCLK GCLK BCLK I Clock signal incoming terminal for Rch, Gch and Bch 61 62 CE I Power saving signal incoming terminal. Power saving enabled for High 62 63 DV DD — Digital power supply terminal 54, 60 55, 61 AV DD — Analog power supply terminal 40 43 DV SS — Digital ground terminal 56, 58 57, 59 AV SS — Analog ground terminal RV RIN GV RIN BV RIN I Rererence voltage incoming terminal for Rch, Gch and Bch RIREF GIREF BIREF — Reference resistor connection terminal for Rch, Gch and Bch 41 44 VA — Connect >0.1 mF capacitor to the AVSS terminal RV B GV B BV B — Connect >0.1 mF capacitor to the AVDD terminal R OUT G OUT BOUT O Analog signal output terminals for Rch, Gch and Bch 2 to 3 25 to 28 39, 45 46, 50 3 to 4 15 to 17 39 to 42 N.C. — Not connected. T o be left open.

Decorder and latch circuit Decorder and latch circuit Decorder and latch circuit REF circuit Reference current generator circuit GCLK BCLK AV DD DV DD AV SS DV SS CE R 0 to R9 G 0 to G9 B0 to B9 VA R OUT RV B RV RIN RIREF G OUT BOUT GV B GV RIN GIREF BV B BV RIN BIREF Current cell Current cell Current cell Reference current generator circuit Reference current generator circuit

n ABSOLUTE MAXIMUM RATINGS WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. n RECOMMENDED OPERATING CONDITIONS *1: IFS = VRIN/RREF · 16 *2: VFS = IFS · RL WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within the recommended operating conditions. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. Parameter Symbol Rating UnitMin. Max. Power supply voltage V DD –0.3 +7.0 V Digital input voltage V ID –0.3 V DD + 0.3 V Analog output voltage V O –0.3 V DD + 0.3 V Analog output current: LQFP64 : QFP64 IO mA mA Storage temperature Tstg –55 +125 °C Parameter Symbol Condition Value UnitMin. Typ. Max. Analog power supply voltage AVDD — 4.75 5.00 5.25 V Digital power supply voltage DV DD — 4.75 5.00 5.25 V Power supply voltage difference AV DD – DVDD — –0.2 — 0.2 V Reference input voltage V RIN — 1.0 2.0 2.2 V Full-scale current*1 IFS LQFP64 0 — 15 mA QFP64 0 — 30 mA Full-scale output voltage*2 VFS IFS 15 mA —2 . 0 2 . 3 V 15 mA < IFS 30 mA —1 . 0 1 . 2 V Digital “H” level input voltage VIHD —2 . 4 — D V DD V Digital “L” level input voltage VILD —0 — 0 . 5 V Clock frequency f CLK —— — 8 5 M H z Setup time t s —4 — — n s Hold time t h —3 — — n s “H” level minimum pulse width tWH —5 — — n s “L” level minimum pulse width tWL —5 — — n s Operating ambient temperature Top — –20 — +75 °C

n ELECTRICAL CHARACTERISTICS 1. DC Characteristics

• R L = 200 W (AVDD = DVDD = 4.75 V to 5.25 V, VRIN = 2 V, RREF = 3.3 kW , RL = 200 W, Ta = –20°C to +75°C)
• R L = 75 W (AVDD = DVDD = 4.75 V to 5.25 V, VRIN = 2 V, RREF = 2.4 kW , RL = 75 W, Ta = –20°C to +75°C) Parameter Symbol Condition Value Unit Min. Typ. Max. Resolution — — — 10 — bit Linearity error LE DC Accuracy —— –1.5 LSB Differential linearity error DLE — — –1L S B Digital input current I ID —– 5 — 5 mA Full-scale output voltage V OFS — 1.85 1.94 2.03 V Zero-scale output voltage V OZS —0 — 1 0 m V Analog power supply current AIDD — — 30 35 mA Digital power supply current DIDD — — 17 24 mA Parameter Symbol Condition Value Unit Min. Typ. Max. Resolution — — — 10 — bit Linearity error LE DC Accuracy —— –1.5 LSB Differential linearity error DLE — — –1L S B Digital input current I ID —– 5 — 5 mA Full-scale output voltage V OFS — 0.94 1.0 1.06 V Zero-scale output voltage V OZS —0 — 1 0 m V Analog power supply current AIDD — — 45 50 mA Digital power supply current DIDD — — 17 24 mA

1. AC Characteristics

• R L = 200 W (AVDD = DVDD = 4.75 V to 5.25 V, VRIN = 2 V, RREF = 3.3 kW , RL = 200 W, CL = 15 pF, Ta = –20°C to +75°C)
• R L = 75 W (AVDD = DVDD = 4.75 V to 5.25 V, VRIN = 2 V, RREF = 2.4 kW , RL = 75 W, CL = 15 pF, Ta = –20°C to +75°C) Parameter Symbol Condition Value Unit Min. Typ. Max. Maximum conversion rate f s 85 — — MSPS Output propagation delay time tpd —1 0— n s Output rising time t r —8—n s Output falling time t f —8—n s Settling time t set —2 7— n s Parameter Symbol Condition Value Unit Min. Typ. Max. Maximum conversion rate f s 85 — — MSPS Output propagation delay time tpd —7—n s Output rising time t r —2—n s Output falling time t f —2—n s Settling time t set —7—n s

• Digital input
• Reference voltage input
• V A p i n DV DD DV SS AV DD AV SS R 0 to R9 G 0 to G9 B0 to B9 RCLK GCLK BCLK CE AV DD AV SS AV DD AV SS RV RIN GV RIN BV RIN RIREF GIREF BIREF RV B GV B BV B DV DD REF circuit DV DD DV SS VA Current cell

• Analog output AV DD R OUT G OUT BOUT AV DD AV SS

1.5 V 1.5 V Analog Output Clock Input Data Input –1/2LSB –1/2LSB 90% 90% 50% 50% 10% 10% VOZS tpd tset tr tpd tset tf

(Continued) AV DD RCLK R 0 to R9 RCLK R 0 to R9 GCLK G 0 to G9 GCLK G 0 to G9 BCLK B0 to B9 BCLK CE DV SS AV SS VA BIREF Bout BV RIN 0 to 2 V(2 VP-P) +2 V BV B GIREF G out GV RIN 0 to 2 V(2 VP-P) +2 V GV B RIREF R out RV RIN +2 V 0 to 2 V(2 VP-P) RV B B0 to B9 0.1 mF +5 V+5 V DV DD R REF R REF R REF 0.1 mF 0.1 mF 0.1 mF 0.1 mF 0.1 mF 3.3 kW 3.3 kW 3.3 kW 200 W 200 W RL RL

200 WRL

• RL = 200 W

(Continued) AV DD RCLK R 0 to R9 RCLK R 0 to R9 GCLK G 0 to G9 GCLK G 0 to G9 BCLK B0 to B9 BCLK CE DV SS AV SS VA BIREF Bout BV RIN 0 to 1 V(1 VP-P) +2 V BV B GIREF G out GV RIN 0 to 1 V(1 VP-P) +2 V GV B RIREF R out RV RIN 0 to 1 V(1 VP-P) +2 V RV B B0 to B9 0.1 mF +5 V+5 V DV DD R REF R REF R REF 0.1 mF 0.1 mF 0.1 mF 0.1 mF 0.1 mF 2.4 kW 2.4 kW 2.4 kW 75 W 75 W RL RL

75 WRL

• RL = 75 W

Part number Package Remarks MB40C950VPFV 64-pin Plastic LQFP (FPT-64P-M03) MB40C950VPFQ 64-pin Plastic QFP (FPT-64P-M10)

(Continued) C 1995 FUJITSU LIMITED F64009S-2C-5 0.10(.004) .005−.001 +.002 −0.02 +0.05 0.127 .059−.004 +.008 −0.10 +0.20 1.50 "A" 0.50±0.20 (.020±.008) Details of "A" part 0 10˚ 161 INDEX LEAD No. (STAND OFF) 0.50±0.08 +.003 −0.03 +0.08 0.18 11.007.50 (.295) REF (.433) NOM 0.10±0.10 (.004±.004) Dimensions in mm (inches). (Mounting height) 64-pin Plastic LQFP (FPT-64P-M03)

(Continued) C 1994 FUJITSU LIMITED F64019S-1C-2 18.00(.709)REF 0.10(.004) 12.00 16.30±0.40 (.472) REF (.642±.016) "A"

1 PIN INDEX

"B" 0.25(.010) 0.30(.012) 0.18(.007)MAX 0.63(.025)MAX Details of "A" part Details of "B" part 0.80±0.20 (.031±.008) 0 10° TYP 1 19 3351 0.05(.002)MIN (STAND OFF) LEAD No. 3.35(.132)MAX (Mounting height) Dimensions in mm (inches) 64-pin Plastic QFP (FPT-64P-M10)

For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT , 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-8588, Japan T el: 81(44) 754-3763 Fax: 81(44) 754-3329 http://www.fujitsu.co.jp/ North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division

3545 North First Street

San Jose, CA 95134-1804, USA T el: (408) 922-9000 Fax: (408) 922-9179 Customer Response Center Mon. - Fri.: 7 am - 5 pm (PST) T el: (800) 866-8608 Fax: (408) 922-9179 http://www.fujitsumicro.com/ Europe FUJITSU MIKROELEKTRONIK GmbH Am Siebenstein 6-10 D-63303 Dreieich-Buchschlag Germany T el: (06103) 690-0 Fax: (06103) 690-122 http://www.fujitsu-ede.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD #05-08, 151 Lorong Chuan New T ech Park Singapore 556741 T el: (65) 281-0770 Fax: (65) 281-0220 http://www.fmap.com.sg/ F9809 ª FUJITSU LIMITED Printed in Japan All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). CAUTION: Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan.