MB4072 FUJITSU | Alldatasheet

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DS04-13200-3EFUJITSU SEMICONDUCTOR DATA SHEET LINEAR IC

1 CHANNEL 8-BIT D/A

1 CHANNEL 8-BIT D/A CONVERTER

The Fujitsu MB4072 is a High-Speed Digital to Analog Converter IC. The MB4072’s current outputs are high impedance open-collector, which provide voltage output with a load or current to voltage converter for various applications with operational amplifiers, microcomputers, etc. Threshold level of digital inputs is variable with the level control input for various interface level.

  • Settling Time : 85ns
  • Linearity Error : –0.19%max.
  • Full-scale T emperature coefficient: –10ppm/°C typ.
  • Output Voltage Compliance : -10V to +18V
  • Multiplying Operation
  • True/Complimentary Current Sink Output
  • Adjustable Threshold Level of Digital Inputs :Interface directly with TTL, CMOS, ECL, etc.
  • Wide Supply Voltage Range : –4.5V to –18V
  • Low Power Consumption : 33mW at –5V typ.
  • Operation Temperature : -40 °C to +85°C
  • Compatible with DAC-08
  • Package : Plastic DIP Package: (Suffix: -P) Plastic FPT Package: (Suffix: -PF) n ABSOLUTE MAXIMUM RA TINGS (TA =25°C) Parameter Symbol Value Unit Supply Voltage V+ to V- 37 V Digital Input Voltage VI V- to V- +37 V Threshold Control Voltage VLC V- to V+ V Reference Input Voltage VREF (+) V- to V+ V VREF (-) V- to V+ V Differential Reference Input Voltage VREF (+) to VREF (-) –18.5 V Reference Input Current IREF 5 mA Power Consumption PD 500 mW Storage Temp. TSTG -55 to +125 °C NOTE: Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PLASTIC PACKAGE FPT -16P-M06 PLASTIC PACKAGE DIP-16P-M04 PIN ASSIGNMENT This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit. VLC IOUT IOUT (MSB)B1 COMP VREF(-) VREF(+) B8(LSB) TOP VIEW

n RECOMMENDED OPERA TING CONDITIONS Parameter Symbol Unit Min Typ Max Supply Voltage V+ +4.5 - +18 V V- -18 - -4.5 V Operating Temperature TA -40 - +85 °C Fig. 1 - BLOCK DIAGRAM 113 5 6 7 8 9 10 11 12 16 3 214 V+ V LC B1 B2 B3 B4 B5 B6 B7 B8 COMP V- IOUT IOUTVREF (+) VREF (-) MSB LSB REF Amp BIAS NETWORK CURRENT SW. INTERFACE LEVEL CONTROL CIRCUIT ___

n ELECTRICAL CHARACTERISTICS (Recommended Operating Conditions unless otherwise noted.) (V+ = +15V , V- = -15V , IREF = 2.0mA, T A = -40°C to +85°C ) Parameter Symbol Value Unit Min Typ Max Resolution 8 8 8 bits Monotonicity 8 8 8 bits Linearity Error LE - - –0.19 % (FSR) Settling Time (Final Value: –1/2 LSB, TA=25°C, On/Off Switching for Each bit/All bits) tS - 85 150 ns Propagation Delay Time (TA=25°C, On/Off Switching for Each bit/All bits) tPLH tPHL - 35 60 ns Temperature coefficient at full-scale TC IFS - –10 –50 ppm/°C Output Voltage Range (DIFS 1/2 LSB, ROUT 20MW typ.) VOC -10 - +18 V Output Current at full-scale (VREF =10.000V, R14=5.000kW , R15=5.000kW , TA=25°C) IFS4 1.94 1.99 2.04 mA Symmetry at full-scale (IFSS =IFS4 -IFS2 ) TFSS - –1.0 –8.0 mA Output Current at zero scale IZS - 0.2 2.0 mA Output Current Range (R14=5.000kW , R15=5.000kW , VREF =+15.0V, V-=-10V) IOR1 2.1 - - mA Output Current Range (R14=5.000kW , R15=5.000kW , VREF =+25.0V, V-=-12V) IOR2 4.2 - - mA Low-level Input Voltage (VLC =0V) VIL - - 0.8 V High-level Input Voltage (VLC =0V) VIH 2.0 - - V Low-level Input Current (VLC =0V, VIN=-10V to +0.8V) IIL - -0.2 -10 mA High-level Input Current (VLC =0V, VIN=2.0V to 18V) IIH - 0.002 10 mA

n ELECTRICAL CHARACTERISTICS (Continued) (VS=–15V , IREF = 2.0mA, TA = -40°C to +85°C) Parameter Symbol Value Unit Min Typ Max Logic Input Voltage Range (V-=-15V) VIS -10 - +18 V Logic Threshold Voltage Range (V+=+15V, V-=-15V) VTHR -10 - +13.5 V Reference Bias Current I15 - -1.0 -3.0 mA Reference Input Through Rate (REQ =200W , RL=100W , CL=0pF) dl dt 4.0 8.0 - mA/ms Supply Voltage Sensitivity* (V+=+4.5V to +18V, IREF =1mA) PSSIFS+ - –0.0003 –0.01 %/% Supply Voltage Sensitivity* (V-=-4.5V to -18V, IREF =1mA) PSSIFS- - –0.002 –0.01 %/% Supply Current (V-=+5V , V-=-5V , IREF =1.0mA ) I- - 2.3 3.8 mA I- - -4.3 -5.8 mA (V+=+5V, V-=-15V, IREF =2.0mA) I- - 2.4 3.8 mA I- - -6.4 -7.8 mA (V+=+15V, V-=-15V, IREF =2.0mA) I- - 2.5 3.8 mA I- - -6.5 -7.8 mA Power Dissipation (V+=+5V, V-=-5V, IREF =1.0mA) PD - 33 48 mW (V+=+5V, V-=-15V, IREF =2.0mA) PD - 103 136 mW (V+=+15V, V-=-15V, IREF =2.0mA) PD - 135 174 mW *Note: PSSIFS =( x 100) / ( x 100)_______18-4.5 DIFS IFS ____

Fig. 2 - WAVEFORM SYNTHESIZER Pattern Generator MB4072 5 to 12 2mA IO IO VOUT 5kW 5kW 5kW 5kW +10V

16-LEAD PLASTIC DUAL IN-LINE PACKAGE (Case No.: DIP-16P-M04) Dimensions in inches (millimeters)ª 1991 FUJITSU LIMITED D16033S-2C .770 +.008 -.012(19.55 ) +0.20 -0.30 .039+.012 (0.99 )+0.30 .244–.010 (6.20–0.25) INDEX-1 .100(2.54) TYP .050(1.27) MAX .020(0.51)MIN .172(4.36)MAX .118(3.00)MIN .300(7.62) TYP 15°MAX .060+.012 (1.52 )+0.30 INDEX-2 .010–.002 (0.25–0.05) .018–.003 (0.46–0.08)

n PACKAGE DIMENSIONS (Continued) 16-LEAD PLASTIC FLAT PACKAGE (Case No.: FPT -16P-M06) Dimensions in inches (millimeters) “A” ª 1991 FUJITSU LIMITED F16015S-2C .400 +.010 -.008(10.15 ) +0.25 -0.20 .209–.012 (5.30–0.30) INDEX .004(0.10) .050(1.27) TYP .018–.004 (0.45–0.10) Ø.005(0.13) .307–.016 (7.80–0.40) .002(0.05)MIN (ST AND OFF HEIGHT) .089(2.25)MAX (MOUNTING HEIGHT) .006+.002 -.001(0.15 )+0.05 -0.02 .020–.008 (0.50–0.20) .027(0.68) MAX .007(0.18) MAX .008(0.20) .016(0.40) Details of “A” part M .350(8.89) REF “B” .268 +.016 -.008(6.80 )+0.40 -0.20 .027(0.68) MAX .007(0.18) MAX .006(0.15) Details of “B” part .008(0.20)

For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT , 1015, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211, Japan T el: (044) 754-3753 Fax: (044) 754-3329 North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division

3545 North First Street

San Jose, CA 95134-1804, U.S.A. T el: (408) 922-9000 Fax: (408) 432-9044/9045 Europe FUJITSU MIKROELEKTRONIK GmbH Am Siebenstein 6-10

63303 Dreieich-Buchschlag

T el: (06103) 690-0 Fax: (06103) 690-122 Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE. LIMITED No. 51 Bras Basah Road, Plaza By The Park, #06-04 to #06-07 Singapore 189554 T el: 336-1600 Fax: 336-1609 F9601 ª FUJITSU LIMITED Printed in Japan All Rights Reserved. Circuit diagrams utilizing Fujitsu products are included as a means of illustrating typical semiconductor applications. Complete information sufficient for construction purposes is not necessarily given. The information contained in this document has been carefully checked and is believed to be reliable. However, Fujitsu assumes no responsibility for inaccuracies. The information contained in this document does not convey any license under the copyrights, patent rights or trademarks claimed and owned by Fujitsu. Fujitsu reserves the right to change products or specifications without notice. No part of this publication may be copied or reproduced in any form or by any means, or transferred to any third party without prior written consent of Fujitsu. The information contained in this document are not intended for use with equipments which require extremely high reliability such as aerospace equipments, undersea repeaters, nuclear control systems or medical equipments for life support.