MB32 ZSELEC | Alldatasheet
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S ur g e O v e r l o a d R a t i n g t o8 0A P e a k I d e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y C l a s s i f i c a t i o n R a t i n g 9 4 V - O G u a r d R i n g D i e C o n s t r u c t i o n For Use in Low Voltage Application 3.0 A SURFACE MOUNT SCHOTTKY BARRIER DIODE MB32 – MB320 Feat ures Schottky Barrier Chip ! Low Power Loss, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 M echanical Data Maximum Ratings and Electrical Characteristics @TA=2 5°C unless otherwise specified Note: 1. Mounted on P.C. Board with 5.0mm 2 c opper pad area. 1 of 2 MB32 – MB320 UnitCharacteristic Sym bol MB32 MB33 MB34 MB35 MB36 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 3.0 A 80 A V 250 pF 20 °C/W -55 t o +150 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR RM S Reverse Voltage VR(RM A v erage Rectified Output Current @T L = 75° C (Note 1) IO Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM Forward V oltage @I F = 3 .0A V FM P eak Reve r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100° C IRM 0.05 20 mA T ypical Junction Capacitance (Note 2) Cj T ypical Thermal Resistance (Note 1) R/G01JA Operating and Storage T emperature Range Tj, TSTG V 0.70 0. 75 0.80 0.90 V 100 150 105 200 140 MB310 MB315 MB320 C ase: SMC/DO-214AB, Molded Plastic! ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version ! Weight: 0.20 grams (approx.) E A B C D F H G SM C/DO-214AB Di m M in Max A 5. 59 6. 22 B 6. 60 7. 11 C 2. 75 3. 25 D 0. 152 0. 305 E 7.75 8. 13 F 2. 00 2. 62 G 0.051 0. 203 H 0. 76 1. 27 A ll Dimensions in mm
0.1 1 10 100 C , JUNCTION CAPACITANCE (pF) j V , REVERSE VOL TAGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f= 1 MHz j 0 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (mA) R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig.
5 Typical Reverse Characteristics
T = 100ºCj T = 75ºCj T = 25ºCj 100 1.0 0.1 0.01 0.001 2 of 2 100 11 0 100 I , PEAK FORWARD SURGE CURRENT (A) F N UMB ER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive P eak Fwd Surge C urrent Sing le Half-Sine-Wave (JEDEC Method) T = 100°CT Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 0.5 1.0 50 75 100 125 150 I AVERAGE FORWARD CURRENT (A)O, T , LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve L ° 1.5 2.0 2.5 3.0 I, INST ANT ANEOUS FORW ARD CURRENT (A) F V , INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics F 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 MB32 - MB34 MB35 - MB36 T - 25ºCJ I Pulse Wi dth = 300 sF µ MB38-MB310 MB315-MB320 MB32 – MB320 MB32 – MB320