MB2F JINGHENG | Alldatasheet
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0.8Ampere Single Phase 0.8 AMP Glass Passivated Bridge Rectifiers 0.296(7.5)MAX 0.075(1.90) 0.022(0.55) 0.018(0.45) 0.042(1.05) MBF 0.158(4.0) 0.142(3.6) 0.051(1.3) 0.063(1.6) ~ ~ 0.193(4.9) 0.177(4.5) 0.086(2.2) 0.109(2.8) 0.012(0.35) Ideal for printed circuit board Reliable low cost construction technique High temperature soldering guaranteed : 260 / 10 seconds / 0.375” ( 9.5mm ) lead length at 5 lbs., ( 2.3 kg ) tension FE A TURES results in inexpensive product MECHANICAL D A T A Epoxy : Device has UL flammability classification 94V-0 Case : Molded Plastic Mounting Position : Any Marking : Type Number MAXIMUM R A TINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R V RMS Reverse Voltage V R(RMS) V Average Rectified Output Current I O A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 30 A I t Rating for Fusing (t < 8.3ms) I t s Forward Voltage per element @I F = 0.4A V FM V Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 125°C I RM 150 µA Typical Junction Capacitance per leg (Note 2) C j 25 pF Typical Thermal Resistance per leg (Note 1) R JA R JL 62.5 25 °C/W Operating and Storage Temperature Range T j , T STG -55 to +150 °C A 10 Unit -On glass-epoxy P.C.B. -On aluminum substrate 0.95 0.8 140V MB4F MB6F MB8F MB10F 200V 400V 600V 800V 1000V 280V 420V 560V 700V MB2F-MB10F MB2F R SEMICONDUCTOR JINAN JINGHENG ELECTRONICS CO., LTD. 2-1 HTTP://WWW.JINGHENGGROUP.COM
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 60 160 140 100 80 20 R O F E G A R E V A T N E R R U C D R A W ) A ( . 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 40 120 SIN ALUMIN A SUBSTR ATE 50.8m mX 50.8m m SOLDERIN G LAN D 1mmX 1mm CONDUC TOR LAYER 20 mm SUBSTR ATE THICKNES S 0.64m m FIG.5- TYPICAL FORWARD CHARACTERISTICS R O F S U O E N A T N A T S N I T N E R R U C D R A W ) A ( . FORWARD VOLTAGE. (V) 0.1 NUMBER OF CYCLES (CYCLE) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 1 100 10 R O F K A E P T N E R R U C E G R U S D R A W ) A ( . Ta=40 C Single Half Sine-Wave (JEDEC Method)
1 Cycle
I FSM NON-REPETITIVE, SINE WAVE, Tj= 25 C BEFORE SURGE CURRENT IS APPLIED O FIG.4- TYPICAL JUNCTION CAPACITANCE 1 2 5 10 20 800 100 1000 600 500 400 300 200 100 REVERSE VOLTAGE. (V) 200 500 P A C N O I T C N U J ) F p ( . E C N A T I C A Tj=25 C 50 0.1 0.5 FIG.2- TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT 0 20 40 60 80 100 120 140 100 0.01 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) Tj=100 C T N E R R U C E S R E V E R S U O E N A T N A T S N I ) A ( . Tj=25 C Tj=75 C MB2F-MB10F RATING AND CHARACTERISTIC CURVES JINAN JINGHENG ELECTRONICS CO., LTD. 2-2 HTTP://WWW.JINGHENGGROUP.COM