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Bruckewell Technology Corp., Ltd. SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER MB120S

FEATURES

  • Low forward voltage (0.76V TYP @ 1.0A)
  • Low leakage current (0.2μA TYP @ 200V)
  • High current rating: 1.0A
  • High voltage rating: 200V APPLICATIONS:
  • Input rectification for LED lighting
  • Power over Ethernet (PoE) peripherals
  • General purpose full wave rectification MECHANICAL DATA Case: MBS Epoxy: UL94V-O rate flame retardant Lead: Lead Formed for Surface Mount Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol MB120S Unit Maximum repetitive peak reverse voltage VRRM 200 V Working peak reverse voltage VRWM 140 V Maximum DC blocking voltage VDC 200 V Maximum average forward rectified current Total device IF(AV) 1 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Operating junction temperature range TJ -55 to +150 °C Storage temperature range TSTG -55 to +150 °C Electrical characteristics (Tc=25°C unless otherwise noted) Parameter Symbol TYP Max Unit Maximun instantaneous at IF=1A, Tj=25°C VF 0.75 0.90 V Maximum reverse current Tj=25°C 0.2 50 u'A at working peak reverse voltage Tj=125°C IR - 20 m'A Thermal characteristics (Tc=25°C unless otherwise noted) Parameter Symbol Unit RθJA 85 Typical thermal resistance Rthjl 28 °C/W (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms