MAT12

MAT12 (Rev. A)

Document overview

• Manufacturer or author: Analog Devices, Inc.
• PDF pages: 12

Technical content

Audio, Dual-Matched NPN Transistor Data Sheet MAT12 Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 ©2010–2014 Analog Devices, Inc. All rights reserved. Technical Suppor t www.analog.com

FEATURES

Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage (V OS): 200 μV maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz PIN CONFIGURATION NOTE 1. SUBSTRATE IS CONNECTED TO CASE ON TO-78 PACKAGE. 2. SUBSTRATE IS NORMALLY CONNECTED TO THE MOST NEGATIVE CIRCUIT POTENTIAL, BUT CAN BE FLOATED. 09044-001 1 6 2 5 3 4 Figure 1. 6-Lead TO-78 available monolithic amplifiers. amplifier harmonic distortion. biasing of the base emitter junction. extended temperature range of −40°C to +85°C.

Rev. A | Page 2 of 12 TABLE OF CONTENTS

REVISION HISTORY

1/14—Rev. 0 to Rev. A 7/10—Revision 0: Initial Version

Rev. A | Page 3 of 12 SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

VCB = 15 V , IO = 10 µA, TA = 25°C, unless otherwise specified. Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit DC AND AC CHARACTERISTICS Current Gain1 hFE IC = 1 mA 300 605 IC = 10 µA 200 550 Current Gain Match2 ΔhFE 10 µA ≤ IC ≤ 1 mA 0.5 5 % Noise Voltage Density3 eN IC = 1 mA, VCB = 0 V fO = 10 Hz 1.6 2 nV/√Hz fO = 100 Hz 0.9 1 nV/√Hz fO = 1 kHz 0.85 1 nV/√Hz fO = 10 kHz 0.85 1 nV/√Hz Low Frequency Noise (0.1 Hz to 10 Hz) eN p-p IC = 1 mA 0.4 µV p-p Offset Voltage VOS VCB = 0 V, IC = 1 mA 10 200 µV −40°C ≤ TA ≤ +85°C 220 µV Offset Voltage Change vs. VCB ΔVOS/ΔVCB 0 V ≤ VCB ≤ VMAX4,1 µA ≤ IC ≤ 1 mA5 10 50 µV Offset Voltage Change vs. IC ΔVOS/ΔIC 1 µA ≤ IC ≤ 1 mA5, VCB = 0 V 5 70 µV Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +85°C 0.08 1 µV/°C −40°C ≤ TA ≤ +85°C, VOS trimmed to 0 V 0.03 0.3 µV/°C Breakdown Voltage, Collector to Emitter BVCEO 40 V Gain Bandwidth Product fT IC = 10 mA, VCE = 10 V 200 MHz Collector-to-Base Leakage Current ICBO VCB = VMAX 25 500 pA −40°C ≤ TA ≤ +85°C 3 nA Collector-to-Collector Leakage Current6, 7 ICC VCC = VMAX 35 500 pA −40°C ≤ TA ≤ +85°C 4 nA Collector-to-Emitter Leakage Current6, 7 ICES VCE = VMAX, VBE = 0 V 35 500 pA −40°C ≤ TA ≤ +85°C 4 nA Input Bias Current IB IC = 10 µA 50 nA −40°C ≤ TA ≤ +85°C 50 nA Input Offset Current IOS IC = 10 µA 6.2 nA −40°C ≤ TA ≤ +85°C 13 nA Input Offset Current Drift6 ΔIOS/ΔT IC = 10 µA, −40°C ≤ TA ≤ +85°C 40 150 pA/°C Collector Saturation Voltage VCE (SAT ) IC = 1 mA, IB = 100 µA 0.05 0.2 V Output Capacitance COB VCB = 15 V, IE = 0 µA 23 pF Bulk Resistance6 RBE 10 µA ≤ IC ≤ 10 mA 0.3 1.6 Ω Collector-to-Collector Capacitance CCC VCC = 0 V 35 pF 1 Current gain is guaranteed with collector-to-base voltage (VCB) swept from 0 V to VMAX at the indicated collector currents. 2 Current gain match (ΔhFE) is defined as follows: ΔhFE = (100(ΔIB)(hFE min)/IC). 3 Noise voltage density is guaranteed, but not 100% tested. 4 This is the maximum change in VOS as VCB is swept from 0 V to 40 V. 5 Measured at IC = 10 µA and guaranteed by design over the specified range of IC. 6 Guaranteed by design. 7 ICC and ICES are verified by the measurement of ICBO.

soldered in a circuit board for surface-mount packages. Table 3. Thermal Resistance

nominally −1 V/decade using the component values indicated. Figure 16. Fast Logarithmic Amplifier

REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 19. 6-Pin Metal Header Package [TO-78]

Rev. A | Page 11 of 12 NOTES

Rev. A | Page 12 of 12 NOTES ©2010–2014 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners . D09044-0-1/14(A)