MAT02S_DIE AD | Alldatasheet
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This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as modified herein. The manufacturing flow described in the STANDARD DIE PRODUCTS PROGRAM brochure ahttp://www.analog.com/marketSolutions/militaryAerospace/pdf/Die_Broc.pdf is to be considered a part of this specification. This data sheet specifically details the space grade version of this product. A more detailed operational description and a complete data sheet for commercial product grades can be found at www.analog.com/MAT02 The complete part number(s) of this specification follow: Part Number Description MAT02-000C Low-Noise Matched Dual Monolithic Transistor 1. C1 2. B1 3. E1 4. E2 5. B2 6. C2
Absolute Maximum Ratings Notes: 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. In accordance with class-K version of MIL-PRF-38534, Appendix C, Table C-II, except as modified herein. (a) Qual Sample Size and Qual Acceptance Criteria – 25/2 (b) Qual Sample Package – 6 Lead TO Package (c) Pre-screen electrical test over temperature performed post-assembly prior to die qualification.
Table I Notes: 1/ VCB = 15V, IC = ±10µA, and TA = 25°C, unless otherwise specified. 2/ Current gain match (∆hFE) is defined as ΔhFE = C FEB I minh)I(100 .
1/ VCB = 15V, IC = ±10µA, and TA = 25°C, unless otherwise specified. 2/ Current gain match (∆hFE) is defined as: ΔhFE = C FEB I minh)I(100 . 3/ ICC and ICES are verified by measurement of ICBO. 4/ Guaranteed by VOS test （TCVOS≅ VOS for VOS<<VBE）T=298°K for TA=+25°C.
5.1 HTRB is not applicable for this drawing. 5.2 Burn-in is per MIL-STD-883 Method 1015 test condition A, B, or C. 5.3 Steady state life test is per MIL-STD-883 Method 1005.