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Low-noise, matched dual monolithic transistor MAT02
1.0 SCOPE
This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein. The manufacturing flow described in the STANDARD SPACE LEVEL PRODUCTS PROGRAM brochure is to be considered a part of this specification http://www.analog.com/aerospace This data sheet specifically details the space grade version of this product. A more detailed operational description and a complete datasheet for commercial product grades can be found at www.analog.com/MAT02 2.0 Part Number. The complete part number(s) of this specification follow: Part Number Description MAT02-903H Low-noise, matched dual monolithic transistor 2.1 Case Outline. Letter Descriptive designator Case Outline (Lead Finish per MIL-PRF-38535) H MACY1-X6 6-Lead can package (TO) Figure 1 - Terminal connections. 3.0 Absolute Maximum Ratings. (TA = 25°C, unless otherwise noted) 1/ Rating applies to applications not using heat sinking, device is free air only.
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3.1 Thermal Characteristics:
Thermal Resistance, TO-78 (H) Package Junction-to-Case (JC) = 45°C/W Max Junction-to-Ambient (JA) = 150°C/W Max Derate linearly at 6.67 mW/°C for ambient temperatures above 70°C. Terminal Connections 1/ Terminal 6 lead TO 1 C1 2 B1 3 E1 4 E2 5 B2 6 C2 1/ Substrate is connected to case on TO-78 package. Substrate is normally connected to the most negative circuit potential, but can be floated. Table I Parameter See notes at end of table Symbol Conditions 1/ Sub- group Limit Min Limit Max Units Current Gain hFE IC = 1mA; VCB = 0V, 40V 1 500 2, 3 275 IC = 100A; VCB = 0V, 40V 1 500 IC = 100A; VCB = 15V 2, 3 225 IC = 10A; VCB = 0V, 40V 1 400 IC = 10A; VCB = 15V 2, 3 175 IC = 1A; VCB = 0V, 40V 1 300 IC = 1A; VCB = 15V 2, 3 150 Current Gain Match 2/ hFE IC=10A,100A,1mA; VCB=0V 1 2 % Offset Voltage VOS VCB = 0V 1 50 V 2, 3 80 Offset Voltage vs. Temperature TCVOS VCB = 0V 0.3 V/°C Offset Voltage vs. VCB 3/ VOS /VCB VCB = 0V, 40V 1 25 V Offset Voltage vs. Collector Current VOS/IC VCB = 0V; IC = 10A, 1mA 1 25 Input Offset Current IOS VCB = 0V, 40V 1 0.6 nA 2, 3 9.0 Offset Current vs. VCB IOS /VCB VCB = 0V, 40V 1 70 pA/V Bulk Emitter Resistance rBE 1 0.5
Table I(cont’d) Parameter See notes at end of table Symbol Conditions 1/ Sub- group Limit Min Limit Max Units Collector Base Leakage Current ICBO VCB = 40V 1 200 pA Collector Emitter Leakage Current 4/ ICES VCE = 40V, VBE = 0V 1 200 Collector-Collector Leakage Current 4/ ICC VCC = 40V 1 200 Bias Current IB VCB = 0V, 40V 1 25 nA 2, 3 60 Collector Saturation Voltage VCESAT IC = 1mA, IB = 100A 1 0.1 V Breakdown Voltage BVCEO IC = 100A 1 40 Noise voltage density en IC=1mA, fO = 10Hz 7 2 HznV/ VCB=0V fO = 100Hz 1 fO = 1000Hz 1 fO = 10KHz 1 TABLE I NOTES: 1/ VCB = 15V; IC = 10A, unless otherwise specified. 2/ Current gain match (hFE) is defined as: C FEB FE h I min)I(100h 3/ Measured at IC = 10A and guaranteed by design over 1A IC 1mA. 4/ ICC and ICES are verified by measurement of ICBO. 5/ Guaranteed by VOS test BEOS OS OS V Vfor T VTCV T = 298°K for TA = +25°C.
4.1 Electrical Test Requirements:
Test Requirements Subgroups (in accordance with MIL-PRF-38535, Table III) Interim Electrical Parameters 1 Final Electrical Parameters 1, 2, 3 1/ 2/ Group A Test Requirements 1, 2, 3, 7 Group C end-point electrical parameters 1 2/ Group D end-point electrical parameters 1 Group E end-point electrical parameters 1 1/ PDA applies to Subgroup 1. Delta's excluded from PDA. 2/ See Table III for delta parameters. See table I for conditions. 4.2 Table III. Burn-in test delta limits. Table III TEST BURN-IN LIFE TEST DELTA TITLE ENDPOINT ENDPOINT LIMIT UNITS hFE @ 1mA 500 420 ±80 hFE @ 100A 500 410 ±90 hFE @ 10A 400 300 ±100 hFE @ 1A 300 180 ±120 IOS 0.6 1.1 ±0.5 nA
5.0 Life Test/Burn-In Circuit:
5.1 HTRB is not applicable for this drawing. 5.2 Burn-in is per MIL-STD-883 Method 1015 test condition B. 5.3 Steady state life test is per MIL-STD-883 Method 1005.
Rev Description of Change Date A Initiate Aug. 29, 2000 B Correct typo at Dice temperature range, change RC package JC from 18 to 35°C/W, correct typo’s on table I (subscript), make correction to Table I note 3 (change from “Measured at IC = 10mA and guaranteed by design over 10mA IC 1mA” to “Measured at IC = 10A and guaranteed by design over 1A IC 1mA”), add subgroup 7 for en, add subgroup 7 to table II, delete subgroups 4, 5, 6 from table II. Jan. 7, 2002 C Update web address. Delete burn-in and rad circuits June 20, 2003 D Update package offering Oct. 10, 2007 E Update header/footer & add to 1.0 Scope description. Feb. 25,2008 F Remove operating junction temperature line and change to Dice Junction Temperature (TJ...150°C) March 31, 2008 G MAT02-913H – removed because its obsolete Sept. 23, 2014