MASW-005102-13600W

MASW-005102-13600 MA-COM | Alldatasheet

Document overview

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Technical content

Features

 Broad Bandwidth Specified up to 18 GHz  Usable up to 26 GHz  Integrated Bias Network  Low Insertion Loss / High Isolation  Rugged, Glass Encapsulated Construction  Fully Monolithic  RoHS* Compliant

Description

The MASW -005102-13600 device is a SP4T broadband switch with integrated bias network utilizing MACOM's HMIC TM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. These high performance switches are suitable for use in multi -band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V / -5 V, TTL controlled PIN diode driver, 80 ns switching speeds can be achieved. Yellow areas denote wire bond pads *Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

Ordering Information

MASW-005102-13600W Waffle Pack J6J2 Common PortJ1 DC Bias J3 J5J4 Functional Diagrams

HMIC™ Silicon SP5T PIN Diode Switch with Integrated Bias Network Rev. V2 MASW-005102-13600 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Electrical Specifications: TA = +25°C, 10 mA (On-Wafer Measurements) Parameter Test Conditions Units Min. Typ. Max. Insertion Loss

2 GHz

6 GHz

12 GHz

18 GHz

dB — 0.9 1.2 1.8 1.5 1.0 1.5 2.1 Isolation dB — Output Return Loss dB — Switching Speed1 10 GHz ns — 80 — Absolute Maximum Ratings2,3,4 Parameter Absolute Maximum RF CW Incident Power +33 dBm Reverse Voltage -50 V Bias Current per Port ±50 mA @ +25°C Junction Temperature +175°C Operating Temperature -65°C to +125°C Storage Temperature -65°C to +150°C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 4. Maximum operating conditions for a combination of RF power, DC bias and temperature: +33 dBm CW @ 15 mA (per diode) @ +85°C. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 0 (HBM) and Class C1 (CDM).devices. 1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, IC = C dv/dt, ratio of spike current to steady state current, is typically 10:1.

HMIC™ Silicon SP5T PIN Diode Switch with Integrated Bias Network Rev. V2 MASW-005102-13600 3 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 2 4 6 8 10 12 14 16 18 S21 (dB) Frequency (GHz) -70 -60 -50 -40 -30 -20 2 4 6 8 10 12 14 16 18 S21 (dB) Frequency (GHz) -30 -25 -20 -15 -10 2 4 6 8 10 12 14 16 18 S11 (dB) Frequency (GHz) -30 -25 -20 -15 -10 2 4 6 8 10 12 14 16 18 S22 (dB) Frequency (GHz) Typical Performance Curves: Isolation vs. Frequency Insertion Loss vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency

HMIC™ Silicon SP5T PIN Diode Switch with Integrated Bias Network Rev. V2 MASW-005102-13600 4 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Typical Bias Network Operation of the MASW-005102-13600 PIN Switch Operation of the HMIC Series of PIN switches is achieved by the simultaneous application of negative DC current to the low loss port and positive DC current to the remaining isolated switching ports per the Driver Connections table below. The control currents should be supplied by constant current sources. For insertion loss, -10 mA bias results in approximately -2 V, and for Isolation,+10 mA yields approximately +0.9 V at the respective bias nodes. The backside area of the die is the RF and DC return ground plane. Typical Driver Connections DC Control Current (mA) RF Output States B3 B4 B5 J1-J2 J1-J3 J1-J4 B2 J1-J5 B6 J1-J6 +10 +10 +10 low loss Isolation Isolation -10 Isolation +10 Isolation -10 +10 +10 Isolation low loss Isolation +10 Isolation +10 Isolation +10 -10 +10 Isolation Isolation low loss +10 Isolation +10 Isolation +10 +10 +10 -10 Isolation Isolation Isolation low loss +10 Isolation +10 +10 +10 +10 Isolation Isolation Isolation Isolation -10 low loss J3J5 DC Bias Input Common Port

HMIC™ Silicon SP5T PIN Diode Switch with Integrated Bias Network Rev. V2 MASW-005102-13600 5 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MASW-005102-13600 Chip Dimensions5,6 DIM Mils Millimeters Min. Max. Min. Max. A 54.0 55.0 1.37 1.40 B 27.0 28.0 0.69 0.71 C 30.0 31.0 0.76 0.79 D 31.0 32.0 0.79 0.81 E 19.0 20.0 0.48 0.51 F 118.5 120.5 3.01 3.06 G 35.0 36.0 0.89 0.91 Chip Thickness 5.0 ref. 0.127 ref. 5. Topside and backside metallization is gold, 2.5 µm thick typical. 6. Yellow areas indicate wire bonding pads.

HMIC™ Silicon SP5T PIN Diode Switch with Integrated Bias Network Rev. V2 MASW-005102-13600 6 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Cleanliness The chips should be handled in a clean environment free of dust and organic contamination. Wire / Ribbon Bonding Thermo compression wedge bonding using 0.003” x 0.00025” ribbon or 0.001” diameter gold wire is recommended. A work stage temperature of 150°C - 200°C, tool tip temperature of 120°C - 150° and a downward force of 18 to 22 grams should be used. If ultrasonic energy is necessary, it should be adjusted to the minimum level required to achieve a good bond. Excessive power or force will fracture the silicon beneath the bond pad causing it to lift. RF bond wires and ribbons should be kept as short as possible for optimum RF performance. Chip Mounting HMIC switches have Ti -Pt-Au backside metallization and can be mounted using a gold -tin eutectic solder or conductive epoxy. Mounting surface must be free of contamination and flat. Eutectic Die Attachment An 80/20, gold -tin, eutectic solder is recommended. Adjust the work surface temperature to 255 oC and the tool tip temperature to 265 oC. After placing the chip onto the circuit board re -flow the solder by applying hot forming gas (95/5 Ni/H) to the top surface of the chip. Temperature should be approximately 290 oC and not exceed 320 oC for more than 20 seconds. Typically no more than three seconds is necessary for attachment. Solders rich in tin should be avoided Epoxy Die Attachment A minimum amount of epoxy, 1 - 2 mils thick, should be used to attach chip. A thin epoxy fillet should be visible around the outer perimeter of the chip after placement. Epoxy cure time is typically 1 hour at 150°C.