MASW-005100 MACOM | Alldatasheet

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Technical content

Monolithic PIN SP5T Diode Switch MASW-005100-1194 Rev 1

FEATURES

  • Ultra Broad Bandwidth: 50MHz to 26GHz
  • 1.0 dB Insertion Loss
  • 30 dB Isolation at 20GHz
  • Reliable.
  • Fully Monolithic
  • Glass Encapsulated Construction

DESCRIPTION

The MASW-0051 00-1194 is a SP5T Series-Shu nt broad band switch made with M/A-COM’s HMICTM (Heterolithic Microwave Integrated Ci rcuit) process, US Patent 5,268,31 0. Th is process all ows th e incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a lo w loss, low dispe rsion glass. T his hybri d combinatio n of Silicon and Glass gives HMIC S witches exceptional low lo ss an d rema rkable high i solation throu gh low millimeter-wave frequencies.

APPLICATIONS

These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V/-5 V, TTL controlled PIN diode driver, 50ns switching speeds are achieved. ABSOLUTE MAXIMUM RATINGS TAMB = +25°C ( Unless otherwise specified ) PARAMETER VALUE OPERATING TEMPERATURE - 65°C to +150°C STORAGE TEMPERATURE - 65°C to +175°C RF C.W. INCIDENT POWER (± 20 mA ) +33dBm BIAS CURRENT ( FORWARD ) ± 20mA APPLIED VOLTAGE ( REVERSE ) - 25V Note: Exceeding any of these values may result in permanent damage. Maximum operating conditions for combination of RF power, D.C. bias and temperature: +30dBm C.W., 15mA per diode @+85°C

SP5T Monolithic Pin Diode Switch MASW- 005100-1194 Rev 1 TYPICAL DRIVER CONNECTIONS CONTROL LEVEL ( DC CURRENT ) CONDITION OF RF OUTPUT J2 J3 J4 J5 J6 J2-J1 J3-J1 J4-J1 J5-J1 J6-J1 -20 mA +20 mA +20 mA +20 mA +20 mA Low Loss Isolation Isolation Isolation Isolation +20 mA -20 mA +20 mA +20 mA +20 mA Isolation Low Loss Isolation Isolation Isolation +20 mA +20 mA -20 mA +20 mA +20 mA Isolation Isolation Low Loss Isolation Isolation +20 mA +20 mA +20 mA -20 mA +20 mA Isolation Isolation Isolation Low Loss Isolation +20 mA +20 mA +20 mA +20 mA -20 mA Isolation Isolation Isolation Isolation Low Loss Electrical Specifications @ TAMB = 25°C, ± 20 mA bias current (on-wafer measurements) RF SPECIFICATIONS PARAMETER FREQUENCY MIN TYP MAX UNITS INSERTION LOSS 20GHz 0.9 1.4 dB ISOLATION 20GHz 28 38 dB INPUT RETURN LOSS 20GHz dB OUTPUT RETURN LOSS 20GHz dB SWITCHING SPEED 10GHz 1 nS Note: 1.) Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390pF - 560pF and a resistor between 150Ω - 220Ω to achieve 50ns rise and fall times.

SP5T Monolithic Pin Diode Switch MASW-005100-1194 Rev 1 Typical Microwave Performance INSERTION LOSS -1.000 -0.800 -0.600 -0.400 -0.200 0.000 FREQUENCY ( GHz ) LOSS ( dB ) J2 J3 J4 J5 J6 ISOLATION -80 -70 -60 -50 -40 -30 -20 -10 FREQUENCY ( GHz ) ISOLATION ( dB ) J2 J3 J4 J5 J6

SP5T Monolithic Pin Diode Switch MASW-005100-1194 Rev 1 Typical Microwave Performance OUTPUT RETURN LOSS -40.000 -35.000 -30.000 -25.000 -20.000 -15.000 -10.000 -5.000 0.000 FREQUENCY ( GHz ) LOSS ( dB ) J2 J3 J4 J5 J6 INPUT RE TURN LO SS -40. -35. -30. -25. -20. -15. -10. -5. FREQ UENC Y ( GHz ) LOSS (dB) J2 J3 J4 J5 J6

SP5T Monolithic Pin Diode Switch MASW-005100-1194 Rev 1 ASSEMBLY INSTRUCTIONS Cleanliness These chips should be handled in a clean environment free of organic contamination. Electro-Static Sensitivity The MASW-00 Series PIN switches are ESD, Class 1A sensitive (HBM). The proper ESD h andling procedures must be used. Wire Bonding Thermosonic wedge wire bonding using 0.003 ” x 0.00025 ” ribbon or 0.001” diameter gold wire is recommended. A stage temperat ure of 150°C and a fo rce of 18 to 22 grams should be used. Ultrasonic energy should be adju sted to the minimum required. RF bon ds should be kept as short as possible to minimize inductance. Mounting These chips have Ti-Pt-Au back metal. They c an be die mounted wit h a 80Au/2 0Sn or electrically conductive Ag epoxy. Mounting surface must be flat and clean of oils and contaminants. Eu Eutectic Die Attachment An 80/20 gold-tin eutectic solder pref orm is recommended with a work surface temperature of 255°C and a tool t ip temperature of 265° C. When h ot gas is a pplied, the t ool tip temperature sho uld be 290°C. The chip shou ld not be e xposed to temperatures greater th an 320°C for more than 1 0 seconds. No more than three seconds should be required for the die attachment. Epoxy Die Attachment Assembly should be pr eheated to 125°C-150°C. A Cont rolled thickness of 2 mils is recommended for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure complete coverage. Cure epoxy per manufacturer’s recommended schedule.

SP5T Monolithic Pin Diode Switch MASW-005100-1194 Rev 1 Operation of the MASW-005100-1194 Switch The simultaneous application of negative DC current to the Low Lo ss Port and pos itive DC current to the remaining Isolated Ports as shown in Figure 1 achieves operation of the MASW-005100-1194 diode switch. The backside area of the di e is the RF and DC return ground plane. The DC return is achiev ed on common Port J1. Constant c urrent sources should supply the DC control currents. The voltages at thes e points will not exceed + 1.5 volts (1.2 volts typical) for supply currents up to ± 20 mA. In the Low Loss stat e, the Series Diode must be forward biased and the Shunt Diode reverse biased. For all the isolat ed ports, the Shunt Diode is forward biase d and the Series Diode is reverse bias ed. The bias network design s hould yield >30 dB RF to DC isolation. Best Insertio n Loss, P1 dB, IP3, and switching speed are achieved by using a voltage pull-u p resistor in the DC return path, ( J1 ). A minimum value of | -2V | is recommended at this return node, which is achievable with a standard , 65V TTL controlled PIN diode driver. A t ypical DC bias schematic for 2-18 GHz operation is shown in Figure 1. 2 – 18 GHz Bias Network Schematic HMIC Switch Die 22 nH J5 J3 J2 22 pF 22 nH DC Bias 39 pF 22 pF 39 pF 100 Ω Fig. 1

SP5T Monolithic Pin Diode Switch MASW-005100-1194 Rev 1 MASW-005100-1194 Chip Dimensions E A C F G B D Nominal Chip Dimensions DIM INCHES µM A 0.068 1730 B 0.034 865 C 0.058 1480 D 0.037 945 E 0.030 750 F 0.030 750 G 0.033 825 All Pads .005 X .005 120 X 120 Thickness 0.005 120

ORDERING INFORMATION

MASW-005100-11940W Waffle Pack