MASW-004100 MACOM | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
Features
- Ultra Broad Bandwidth: 50MHz to 26GHz
- 0.9 Insertion Loss , 34dB Isolation at 20GHz
- 50nS Switching Speed
- Reliable, Fully Monolithic, Glass Encapsulated Construction
Description
The MASW-004100-1193 is a SP4T series-shunt broad band switch made with M/A-COM’s unique HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of silicon and glass gives HMIC switches exceptional low loss and remarkable high isolation through low millimeter- wave frequencies.
Applications
These high performance switches are suitable for use in multi-band ECM, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 50nS switching speeds are achieved. Absolute Maximum Ratings TAMB = +25°C ( Unless Otherwise Specified ) Notes: Exceeding these limits may cause permanent damage. Parameter Value Operating Temperature -65°C to +125°C Storage Temperature -65°C to +150°C RF C.W. Incident Power (± 20mA) +33dBm Bias Current ( Forward ) ± 20mA Applied Voltage ( Reverse ) -25 Volts J4 J3 J2 J5
Monolithic Pin Diode Series-Shunt Switch Rev 2 MASW-004100-1193 Electrical Specifications @ TAMB = +25oC, ± 20mA Bias Current (On-Wafer Measurements) Parameter Frequency Minimum Nominal Maximum Units Insertion Loss 20 GHz 0.9 1.3 dB Isolation 20 GHz 28 34 dB Input Return Loss 20 GHz 15 dB Output Return Loss 20 GHz 15 dB Switching Speed1 10 GHz 50 nS Notes: 1.) Typical switching speed is measured from 10% to 90% of detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390pF – 560pF and a resistor between 150Ω – 220Ω to achieve 50nS rise and fall times. Typical Driver Connections Control Level ( DC Current ) at Port Condition of RF Output Condition of RF Output Condition of RF Output Condition of RF Output J2 J3 J4 J5 J1-J2 J1-J3 J1-J4 J1-J5 -20mA +20mA +20mA +20mA Low Loss Isolation Isolation Isolation +20mA -20mA +20mA +20mA Isolation Low Loss Isolation Isolation +20mA +20mA -20mA +20mA Isolation Isolation Low Loss Isolation +20mA +20mA +20mA -20mA Isolation Isolation Isolation Low Loss Assembly Considerations Cleanliness Chips should be handled in a clean environment free of organic contamination. Electro-Static Sensitivity The MASW-004100-1193 PIN switch is ESD, Class 1A sensitive (HBM). Proper ESD handling equipment and procedures should be used. Die Wire Bonding Thermosonic wedge wire bonding using ¼ x 3 mil sq. ribbon or Ball Bonding using 1 mil diameter gold wire is recommended. A stage temperature of 150°C and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required. RF bonds should be as short as possible. Die Mounting These chips have a Ti-Pt-Au back metal stack that can be die mounted using a gold-tin eutectic solder preform or conductive Ag epoxy. Mounting surface must be clean and flat. Eutectic Die Attachment An 80/20 Gold-Tin eutectic solder preform is recommended wi th a work surface temperature of 255°C and a tool tip temperature of 265°C. When hot gas is applied, the tool tip temperature should be ~290°C. The chip should not be exposed to temperatures greater than 320°C for more than 20 seconds. No more than three seconds should be required for the attachment. Electrical Epoxy Die Attachment Assembly should be preheated to 125-150°C. A controlled thi ckness of 2 mils is recommended for best electrical and thermal conductivity. A thin epoxy fillet should be visible ar ound the outer perimeter of the chip after placement to ensure complete coverage. Cure epoxy per manufacturer’s schedule.
MASW-004100-1193 INSERTION LOSS -2.0 -1.5 -1.0 -0.5 0.0 Frequency (GHz) Loss (dB) J1-J2 J1-J3 J1-J4 J1-J5 MASW-004100-1193 INPUT RETURN LOSS -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 Frequency (GHz) R. Loss (dB) J1-J2 J1-J3 J1-J4 J1-J5
MASW-004100-1193 OUTPUT RETURN LOSS -35 -30 -25 -20 -15 -10 0 5 10 15 20 25 30 Frequency (GHz) R. Loss(dB) J2 MASW-004100-1193 ISOLATION -90 -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 Frequency (GHz) Isolation (dB) J1-J2 J1-J3 J1-J4 J1-J5
Operation of the MASW-004100-1193 PIN Switch Operation of the MASW-004100-1193 PIN switch is achieved by the simultaneous application of negative DC current to the low loss port and positive DC current to the remaini ng isolated switching ports as shown in Figure 1. The backside area of the die is the RF and DC return ground pl ane. The DC return is achieved on the common port, J1. The DC control currents should be supplied by constant current source. The vo ltages at these points will not exceed ±1.5 volts (1.2 volts typical) for supply currents up to ±20 mA. In the low loss state, t he series diode must be forward biased and the shunt diode reverse biased. For all the isolated ports, the shunt diode is forward biased and the series diode is reverse biased. The bias network design should yield > 30 dB RF to DC isolation. Best insertion loss, P1dB, IP3, and sw itching speed are achieved by using a voltage pull-up resistor in the DC return path, (J1 ). A minimum value of |-2V| is recommended at this return node, which is achievable with a standard, ±5V TTL controlled PIN diode driver. A typical DC bias schematic for 2-18 GHz Operation is shown in Figure 1. 2 – 18 GHz Bias Network HMIC Switch Die 22nH J4 J3 J2 22 pF 22nH DC Bias 39 pF 22 pF 39 pF 100 Ω Fig. 1
A .066 1.67 B .047 1.19 C .054 1.37 D .012 0.31 E .043 1.08 F .009 0.22 G .004 0.11 H .004 0.11 I .033 0.84 J .061 1.56 Thickness .005 .120 Bond Pads .005X.005 0.120X.0120
Ordering Information
MASW-004100-11930W Waffle Pack