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Technical content
Features
Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance RoHS Compliant Surmount™ Package Rugged, Fully Monolithic Glass Encapsulated Construction Up to +38 dBm C.W. Power Handling1 @ +25°C Silicon Nitride Passivation Polymer Scratch Protection
Description
The MASW-002103-1363 is a Surmount™ broadband monolithic SPDT switch using series and shunt connected silicon PIN diodes. This part is designed for use as a moderate signal, high performance switch in applications up to 20 GHz. This Surface Mount chipscale configuration is optimized for broadband performance with minimal associated parasitics usually associated with hybrid MMIC designs incorporating beam lead and PIN diodes that require chip and wire assembly. The MASW-002103-1363 is fabricated using M/A-COM Tech’s patented HMIC™ (Heterolithic Microwave Integrated Circui t) process, US Patent 5,268,310. This process a llows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protec tive coatings prevent damage to the junction and the anode airbridge during handling and assembly. Pin Configuration 2
Ordering Information
MASW-002103-13630G 50 piece gel pack MASW-002103-13635P 500 piece reel MASW-002103-13630P 3000 piece reel MASW-002103-001SMB Sample Test Board Pin Function J1 RFC J2 RF1 J3 RF2 Functional Schematic 1. Power Handling Testing performed @ 2GHz 2. The exposed pad centered on the chip bottom must be connected to RF and DC ground.
HMICTM Silicon PIN Diode SPDT Switch
50 MHz - 20 GHz
Rev. V7 MASW-002103-1363 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Parameter Frequency Units Min. Typ. Max. Insertion Loss
6 GHz
13 GHz
20 GHz
0.55 0.80 1.05 0.63 0.93 1.25 Input to Output Isolation 17.3 16.5 Input 0.1dB Compression Point 2 GHz dBm — 36 — IIP3
0.05 GHz, 5 MHz Spacing, +10dBm
0.5 GHz, 5 MHz Spacing ,+20dBm
1 GHz, 10 MHz Spacing, +20dBm
2 GHz, 10 MHz Spacing, +20dBm
Switching Speed 3 — ns — 20 — Voltage Rating 4 — V — — 80 Electrical Specifications: TA = 25°C, PIN = 0 dBm, Z0 = 50 Ω, 20mA/-10V Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These devices are rated at Class 1A Human Body Model. Proper ESD control techniques should be used when handling these devices. Parameter Absolute Maximum Operating Temperature -65 °C to +125 °C Storage Temperature -65 °C to +150 °C Junction Temperature +175 °C Applied Reverse Voltage |-80 V| RF CW Incident Power 38dBm CW @ 2GHz,+25ºC 33dBm CW @ 20GHz,+25ºC Bias Current +25°C ± 50 mA Max Operating Conditions for combination RF Pwr, DC Bias, & Temp: 33dBm CW @ 20mA per Diode @ +85ºC @ 2GHz 3. Typical Switching Speed measured fro 10% to 90 % of detected RF signal driven by TTL compatible drivers. 4. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.5 uA maximum @ -80 volts. Absolute Maximum Ratings 5,6 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. M/A-COM Tech does not recommend sustained operation near these survivability limits.
HMICTM Silicon PIN Diode SPDT Switch Rev. V7 MASW-002103-1363 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical Small Signal Performance at +25°C (On-Wafer RF Test) MASW-002103-1363 Return Loss Forw ard Bias (On-arm): -10V, -20mA, Reverse Bias (Off-arm): 20mA -45.00 -40.00 -35.00 -30.00 -25.00 -20.00 -1 5.00 -1 0.00 -5.00 0.00 Fr e q [GHz] Return Loss (dB) Input J1 to J2 Output J2 Output J3 Input J1 to J3 MASW-002103-1363 Insertion Loss Forw ard Bias (On-arm): -10V, -20mA, Reverse Bias (Off-arm): 20mA -2.00 -1 .80 -1 .60 -1 .40 -1 .20 -1 .00 -0.80 -0.60 -0.40 -0.20 0.00 Frequency (GHz) Insertion Loss (dB) MASW-002103-1363 Isolation Forw ard Bias (On-arm):-10V, -20mA, Reverse Bias (Off-arm): 20mA -80.00 -70.00 -60.00 -50.00 -40.00 -30.00 -20.00 -1 0.00 0.00 Frequency (GHz) Isolation (dB) MASW-002103-1363 Maximum Input Power Curve Baseplate Temperature fixed @ 25degC Insertion Loss (dB) Input Power (Watts) 2GHz, 6.7W 10GHz, 3.5W 20GHz, 2W
HMICTM Silicon PIN Diode SPDT Switch Rev. V7 MASW-002103-1363 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Control Level (DC Currents and Voltages) Condition of RF Output Condition of RF Output B2 B3 J1-J2 J1-J3 -15V at -20mA 7 6V at +20mA Low Loss Isolation 6V at + 20mA -15V at -20mA7 Isolation Low Loss Driver Connections 7. As long as 20mA is applied th rough the on diodes, the voltage can vary. Bias Control Optimal operation of the MASW-002103-1363 is achieved by simultaneous application of negative DC voltage and current to the low loss switching arm and positive DC voltage and current to the remaining switching arm as shown in the applications circuit below. DC return is achieved via R2 on the RFC path. In the low loss state, the series diode must be forward biased with current and the shunt diode reverse biased with voltage. In the isolated arm, the shunt diode is forward biased with current and the series diode is reverse biased with voltage. Notes: 8. Assume Vf ~ 1V at 20mA 9. R1 = 5V / 0.02A = 250 Ω; R2 = 9V / 0.02A = 450Ω 10. P R1 = 0.02A x 0.02A x 250 = 0.1 W 11. P R2 = 0.02A x 0.02A x 450 = 0.18 W 12. Inductors are bias RF c hokes. The operating band width of a broad-band PIN diode switch is often dependent on the bias comp o- nents, particularly the RF bias chokes. It is suggested that the frequency response be checked with all the bias components attached before installing the PIN diode. Application Circuit 8,9,10,11,12 Example: J1 to J2→ Low Loss R1 = 250Ω R2 = 450Ω B2 = -15V B3 = 6V
HMICTM Silicon PIN Diode SPDT Switch Rev. V7 MASW-002103-1363 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MASW-002103-1363 Outline Drawing MASW- 002103-1363 Inches mm MIN MAX MIN MAX Width 0.060 0.062 1.52 1.57 Length 0.087 0.089 2.20 2.25 Thickness 0.004 0.006 0.10 0.15 DIM Units are in µm 1545 2225 125 J2 J3 Top View Back Metal Side View
HMICTM Silicon PIN Diode SPDT Switch Rev. V7 MASW-002103-1363 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Handling Procedures Attachment to a circuit board is made simple through the use of standard surface mount technology. Mounting pads are conveniently located on the bo ttom surface of these devices and are removed from the active junction locations. These devices are well suited for solder a ttachment onto hard and soft substrates. The use of 80Au/20Sn, or RoHS compliant solders is recommende d. For applications w here the average power is ≤ 1W, conductive silver epoxy may also be used. Cure per manufacturers recommended time and temperature. Typi- cally 1 hour at 150°C. When soldering these devices to a hard substrate, a so lder re-flow method is prefer red. A vacuum tip pick-up tool and a force of 60 to100 grams applied to the top surface of the device while placing the chip is recom- mended. When soldering to soft substrates, such as Duroid, it is recommended to use a soft solder at the circuit board to mounting pad interface to minimize stress due to any TCE mismatches that may exist. Position the die so that its mounting pads are aligned with the circuit board mounting pads. Solder reflow should not be per- formed by causing heat to flow through the top surface of the die to the back. Since the HMIC glass is transpar- ent, the edges of the mounting pads can be visually inspected through the die after attachment is completed. Typical re-flow profiles for Sn60/Pb40 and RoHS compliant solders is provided in Application Note M538 “Surface Mounting Instructions“ and can viewed on the MA-COM Technology Solutions website @ www.macomtech.com Sample Board Samples test boards are available upon request
HMICTM Silicon PIN Diode SPDT Switch Rev. V7 MASW-002103-1363 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Chip Orientation in Pocket .157 ± .004 4.00 ± 0.10 2.00 ± 0.05 .079 ± .002 .157 ± .004 4.00 ± 0.10 Ф .059 ± .004 THRU 1.5 ± .069 ± .004 1.75 ± 0.10 +.012 +0.30 8.00 - 0.10 .093 ± .002 0.30 ± 0.03 3.5 ± 0.05 Ф 0.035 THRU TYP. Ф 0.89 5° MAX. .012 ± .002 0.30 ± 0.05 POCKET DEPTH .066 ± .002 1.80 ± 0.05 .138 Pocket Tape Dimensions
HMICTM Silicon PIN Diode SPDT Switch Rev. V7 MASW-002103-1363 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. DIM INCHES MM MIN. MAX. MIN. MAX. A 6.98 7.02 177.3 178.3 B .059 .098 1.5 2.5 C .504 .520 12.8 13.2 D .795 .815 20.2 20.7 W1 .331 .337 8.4 8.55 W2 — .567 — 14.4 N 2.14 2.19 54.5 55.5 B N C D W1 & W2 measured at hub A Reel Information