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Document overview
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Technical content
Features
Specified Bandwidth: 45MHz—2.5GHz Useable 30MHz to 3.0GHz Low Loss <0.5dB High isolation >40dB High C.W. Incident Power, 50W at 500MHz High Input IP3, +66dBm @ 500MHz Unique Thermal Terminal for Series Diode Surface Mount Device (No Wire Bonds) Rugged Silicon-Glass Construction Silicon Nitride Passivation Protective Polymer Protective Polymer Scratch Protection RoHS Compliant
Description
A PIN diode series-shunt switch element with a unique integrated thermal terminal for dissipating heat in the series diode created by the DC and RF input power. The thermal terminal allows for optimum heat dissipa- tion by providing a direct thermal connection between the series diode and the circuit heatsink while also being electrically isolated. The chip is designed to pro- vide a heat transfer conduit that does not interfere with the PIN diode anode (input) and cathode (output) elec- trical terminals, especially with respect to RF per- formance. The chip is fabricated using M/A-COM Technology Solutions patented HMIC™ process and features silicon pedestals embedded in a low loss, low dispersion glass for low leakage current. The top- side is fully encapsulated with silicon nitride and has an additional polymer layer to protect against damage during handling and assembly Parameter Absolute Maximum Forward Current 100mA Reverse Voltage - 180V Operating Temperature -55°C to +125°C Storage Temperature -55°C to +150°C Junction Temperature +175°C Dissipated RF & DC Power 500MHz, 4W RF C.W. Incident Power 500MHz, 50W Mounting Temperature +260°C for 30 seconds ESD Class 1A — HBM ESD Class M3 — MM ESD Class C3 — CDM Absolute Maximum Ratings This PIN diode series-shunt switch element is particularly advantageous in high average power, 50W, switch applications from 30MHZ – 3GHz. The backside RF, D.C., and thermal I/O ports allow for direct solder re-flow, surface mount, attachment to a micro-strip circuit assembly . The thermal terminal design provides the, power dissipating, series diode a direct connection to the circuit thermal ground for unprecedented heat transfer. The thermal terminal port is electrically isolated from the I/O ports and can be configured as either a reflective or an absorptive switch.
Applications
MASW-001150-13160W WAFFLE PACK MASW-001150-13160P POCKET TAPE 2. Reference Application Note M513 for reel size information.
SURMOUNT PIN Diode Switch Element with Thermal Terminal V5 MASW-001150-1316
2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Electrical Specifications @ TAMB = +25°C Symbol Parameter Conditions Units Typical Maximum CT Series Total Capacitance -25V ,30MHz pF 0.52 — CT Series Total Capacitance -25V, 1800MHz pF 0.37 — CT Shunt Total Capacitance -25V, 30MHz pF 0.54 — CT Shunt Total Capacitance -25V, 1800MHz pF 0.39 — RS Series Series Resistance 20mA, 30MHz 1.13 — RS Series Series Resistance 20mA,1800MHz 1.25 — RS Series Series Resistance 50mA, 30MHz 0.93 — RS Series Series Resistance 50mA,1800MHz 1.07 — RS Shunt Series Resistance 10mA, 30MHz 1.00 — RS Shunt Series Resistance 10mA, 1800MHz 0.99 — VF Forward Voltage 20mA V 0.82 0.85 VF Forward Voltage 50mA V 0.88 0.90 IR Reverse Leakage Current -180V µA — -10.0 RqJL Thermal Resistance Steady State °C/W 36.0 — TL 1 Minority Carrier Lifetime IF 10mA/IR-6mA µs 8.5 — 1. Measured from 50% of contro l voltage to 90% of output voltage Parameter Units Port 1 Port 2 Conditions Minimum Typical Maximum Insertion Loss dB -25V - 50mA 45MHz — 0.07 0.10 -25V - 50mA 1000MHZ — 0.30 0.45 -25V - 50mA 2500MHz — 0.60 0.80 Return Loss dB -25V - 50mA 45MHz 36 39 — -25V - 50mA 1000MHZ 18 20 — -25V - 50mA 2500MHz 11 13 — Isolation dB -25V + 50mA 45MHz 60 63 — -25V + 50mA 1000MHZ 40 42 — -25V + 50mA 2500MHz 29 33 — Input IP3 dBm -25V - 50mA -50mA / -25V F1 = 500MHz F2 = 505MHz PIN = +40dBm(each tone) +66 — 2nd Harmonic dBc -25V - 50mA 50mA / -25V 500MHz /+35dBm — -46 — 3rd Harmonic dBc -25V - 50mA 50mA / -25V 500MHz /+35dBm — -60 —
SURMOUNT PIN Diode Switch Element with Thermal Terminal V5 MASW-001150-1316
3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MASW-001150-13160 Insertion Loss, Isolation, Return Loss From 45-3000 MHz -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 Frequency (GHz) Insertion Loss (dB) -80 -70 -60 -50 -40 -30 -20 -10 Isolation & Return Loss (dB) Isolation_+5mA Return loss_-50 mA Insertion Loss_-50mA Typical RF Small Signal Performance
SURMOUNT PIN Diode Switch Element with Thermal Terminal V5 MASW-001150-1316
4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Note: The bias circuits provided in the schematic above as sumes current sources are available. If only voltage sources are available, a resistor will need to be added to the RF Input (J1) Bias Re turn Network. When using a D.C. voltage of 25V, a 500Ω resistor must be used to draw 50mA of current into the switch. MASW-001150-13160W Configured as an Absorptive High Power SPST Switch
SURMOUNT PIN Diode Switch Element with Thermal Terminal V5 MASW-001150-1316
5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Note: The bias circuits provided in the schematic above as sumes current sources are available. If only voltage sources are available, a resistor will need to be added to the RF Input (J1) Bias Re turn Network. When using a D.C. voltage of 25V, a 500Ω resistor must be used to draw 50mA of current into the switch. MASW-001150-13160W Configured as a Reflective SPST Switch
SURMOUNT PIN Diode Switch Element with Thermal Terminal V5 MASW-001150-1316
6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. RF Output 22 +0/-2 mil (4) PL 22 +0/-2 mil (4) PL RF Input Shunt Cathode Return Thermal Terminal Thermal Circuit Vias D.C Ground or RF Trace Direction 20 ±1 mil (4) PL RF Output Trace Direction RF Input Trace Direction RF , DC, and Thermal Circuit Footprint ( Topview )
SURMOUNT PIN Diode Switch Element with Thermal Terminal V5 MASW-001150-1316
7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Dimension Inches Millimeters min. max. min. max. A 0.0665 0.0673 1.69 1.71 B 0.0665 0.0673 1.69 1.71 C 0.0045 0.0053 0.115 0.135 D 0.0195 0.0205 0.495 0.520 E 0.0195 0.0205 0.495 0.520 F 0.0195 0.0205 0.495 0.520 G 0.0195 0.0205 0.495 0.520 Notes: Backside Metal: 2.5μm thick Au Hatched yellow areas are I/O ports (die solder pads) Ports Function
1 RF Input
2 Thermal Terminal for Series Diode
(Electrically isolated from other ports)
3 Shunt Diode (Cathode Return)
4 RF Output / D.C. bias Top View Bottom View Chip Outline and Port Designations
Ordering Information
MASW-001150-13160W Waffle Tray MASW-001150-13160P Pocket Tape
SURMOUNT PIN Diode Switch Element with Thermal Terminal V5 MASW-001150-1316
8 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Component Value Case Size Manufacturer C1, C2 0.01μF 0402 Murata C3, C4 100pF 0402 Murata L1, L2, L3, L4 390nH 0603 Coilcraft Ordering Information for Test Board Part Number MASW-001150-001SMB
SURMOUNT PIN Diode Switch Element with Thermal Terminal V5 MASW-001150-1316
9 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Assembly Guidelines Handling All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. Bulk handling should insure that abrasion and mechanical shock are minimized. Bonding Attachment to a circuit board is made simple through the use of surface mount technology. Mounting pads are conveniently located on the bottom surface of these devic es and are removed from the active junction locations. These devices are well suited for solder or conductive epoxy attachment onto hard or soft substrates. The use of 60Pb/40Sn, 80Au/20Sn or any Ro HS lead-free solder is recommended to achieve the lowest series resistance and optimum heat sink. The thermal terminal is not electr ically conductive and may be soldered directly to any appropriate heat sink without affecting RF performance. When soldering these devices to a hard substrate, hot gas die bonding is preferred. When soldering, position the die so that its mounting pads are aligned with the circuit board mounting pads and reflow the solder by heating the circuit trace near the mounting pads while applying 40 to 60 grams of force perpendicular to the top surface of the die. All mounting pads should be heated simultaneously so that the solder under the pads flows evenly and at the same time. Avoid soldering the pads one at a time as doing so may produce non-uniform heat flow which potentially could create thermal stress to the chip. Die should be uniformly heated in a re-flow oven and not by causing heat to flow directly through the top surface of the die. Since the HMIC glass is transparent, the edges of the mounting pads can be visually inspected through the top surface of the die to ensure proper solder flow and attachment. A typical soldering process profile and handling instructions are provided in Application Notes , M538 Surface Mounting Instructions and M541 Bonding and Handling Procedures on the MA/COM Technology Solutions website at www.macomtech.com Conductive silver epoxy may also be used for die attachm ent in lower Incident power applications where the average power is <1W. Apply a thin controlled amount, approxim ately 1- 2 mils thick, to minimize ohmic and thermal stresses and maximize heat transfer. Take care not to bridge the gap between the chip pads with epoxy. A thin epoxy fillet should be visible around the perimeter of the pads after placement to ensure full coverage. Cure epoxy per manufacturer’s recommended schedule. Typically 150°C for one hour.