MASW-001100-1190

MASW-001100-1190 MA-COM | Alldatasheet

Document overview

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Technical content

Features

♦ Broad Bandwidth ♦ Specified from 50MHz to 20GHz ♦ Usable from 50MHz to 26.5GHz ♦ Lower Insertion Loss / Higher Isolation than pHempt ♦ Rugged ♦ Fully Monolithic, ♦ Glass Encapsulated Construction ♦ Up to +33dBm C.W. Power Handling

Description

The MASW-001100-1190, MASW-002100-1191 and MASW-003100-1192 are broadband monolithic switches using series and shunt conn ected silicon PIN diodes. They are designed for use as 2W, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beamlead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using M/A-COM’s patented HMIC TM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20, AuSn solder or conductive Ag epoxy. Parameter Absolute Maximum Operating Temperature -65oC to +125oC Storage Temperature -65oC to +150oC Junction Temperature +175oC Applied Reverse Voltage | - 50V | RF C.W. Incident Power +33dBm C.W. Bias Current +25°C ±20mA MASW-001100-1190 Max operating Conditions for a Combination of RF Power, D.C. Bias and Temperature: +33dBm CW @ 15mA (per diode) @+85°C MASW-002100-1191 MASW-003100-1192

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. HMIC™ Silicon PIN Diode Switches RoHs Compliant Rev. V6 MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MASW-001100-1190 (SPST) Electrical Specifications @ TA = +25oC, 20mA Bias Parameter Frequency Minimum Nominal Maximum Units 6GHz - 0.4 0.7 dB Insertion Loss 13GHz - 0.5 0.9 dB 20GHz - 0.7 1.2 dB 6GHz 46 55 - dB Isolation 13GHz 39 47 - dB 20GHz 34 42 - dB 6GHz 22 31 - dB Input Return Loss 13GHz 15 33 - dB 20GHz 14 27 - dB Switching Speed1 - - 20 - ns Voltage Rating2 - - - 50 V Signal Compression (500mW) 1GHz - 0.2 - dB MASW-002100-1191 (SPDT) Electrical Specifications @ TA = +25oC, 20mA Bias Parameter Frequency Minimum Nominal Maximum Units 6GHz - 0.4 0.7 dB Insertion Loss 13GHz - 0.5 1.0 dB 20GHz - 0.7 1.2 dB 6GHz 48 63 - dB Isolation 13GHz 40 50 - dB 20GHz 34 42 - dB 6GHz 20 27 - dB Input Return Loss 13GHz 18 25 - dB 20GHz 15 25 - dB Switching Speed1 - - 20 - ns Voltage Rating2 - - - 50 V Signal Compression (500mW) 1GHz - 0.2 - dB Parameter Frequency Minimum Nominal Maximum Units 6GHz - 0.5 0.8 dB Insertion Loss 13GHz - 0.7 1.1 dB 20GHz - 0.9 1.5 dB 6GHz 49 57 - dB Isolation 13GHz 42 48 - dB 20GHz 33 42 - dB 6GHz 20 24 - dB Input Return Loss 13GHz 14 22 - dB 20GHz 11 21 - dB Switching Speed1 - - 20 - ns Voltage Rating2 - - - 50 V Signal Compression (500mW) 1GHz - 0.2 - dB MASW-003100-1192 (SP3T) Electrical Specifications @ TA = +25oC, 20mA Bias 1.) Typical Switching Speed measured from 10 % to 90 % of detected RF signal driven by TTL compatible drivers. 2.) Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10mA maximum at -50 volts. 1.) Typical Switching Speed measured from 10 % to 90 % of detected RF signal driven by TTL compatible drivers. 2.) Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10mA maximum at -50 volts.

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. HMIC™ Silicon PIN Diode Switches RoHs Compliant Rev. V6 MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical Performance Curves at TA = +25°C, 20mA Bias Current MASW-001100-1190 RETURN LOSS vs. FREQUENCY -35 -30 -25 -20 -15 -10 0 5 10 15 20 25 30 FREQUENCY (GHz) RETURN LOSS (dB) I nput Return Loss Output Return Loss MASW-001100-1190 INSERTION LOSS vs. FREQUENCY -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 0 5 10 15 20 25 30 FREQUENCY (GHz ) INSERTION LOSS (dB MASW-002100-1191 RETURN LOSS vs. FREQUENCY -35 -30 -25 -20 -15 -10 0 5 10 15 20 25 30 FREQUENCY (GHz) RETURN LOSS (dB) I nput Return Loss Output Return Loss MASW-002100-1191 INSERTION LOSS vs. FREQUENCY -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 0 5 10 15 20 25 30 FREQUENCY (GHz) INSERTION LOSS (d B MASW-003100-1192 RETURN LOSS vs. FREQUENCY -30 -25 -20 -15 -10 0 5 10 15 20 25 30 FREQUENCY (GHz) RETURN LOSS (dB ) Input Ret urn Loss Output Return Loss MASW-003100-1192 INSERTION LOSS vs. FREQUENCY -1.2 -1.1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 0 5 10 15 20 25 30 FREQUENCY (GHz) INSERTION LOSS (dB S-Parameters: S-Parameter data for these devices are available upon request.

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. HMIC™ Silicon PIN Diode Switches RoHs Compliant Rev. V6 MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical Performance Curves @ TA = +25°C, 20mA Bias Current MASW-001100-1190 ISOLATION vs. FREQUENCY -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 0 5 10 15 20 25 30 FREQUENCY (GHz) ISOLATION (dB) INPUT RETURN LOSS vs. BIAS CURRENT @ 10 GHz -34 -32 -30 -28 -26 -24 -22 0 5 10 15 20 25 30 35 40 45 50 55 CURRENT (mA) INPUT RETURN LOSS (dB MASW -0031 00 MASW -0021 00 M A S W- 0 0 110 0 MASW-003100-1192 ISOLATION vs. FREQUENCY -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 0 5 10 15 20 25 30 FREQUENCY (GHz ) ISOLATION (dB ) MASW-002100-1191 ISOLATION vs. FREQUENCY -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 0 5 10 15 20 25 30 FREQUENCY (GHz) ISOLATION (dB) OUTPUT RETURN LOSS vs. BIAS CURRENT@ 10 GHz -25.5 -25 -24.5 -24 -23.5 -23 -22.5 -22 -21.5 0 5 10 15 20 25 30 35 40 45 50 55 CURRENT (mA) OUTPUT RETURN LOSS (dB MASW -0031 00 MASW -0021 00 M A S W- 0 0 110 0 INSERTION LOSS vs. BIAS CURRENT @ 10 GHz -0.7 -0.65 -0.6 -0.55 -0.5 -0.45 -0.4 -0.35 0 5 10 15 20 25 30 35 40 45 50 55 CURRENT (mA) INSERTION LOSS (dB MASW -0031 00 MASW -0021 00 MASW -001 1 00 ISOLATION vs. BIAS CURRENT @ 10 GHz -54 -53 -52 -51 -50 -49 -48 -47 -46 0 5 10 15 20 25 30 35 40 45 50 55 CURRENT (mA ) ISOLATION (dB) MASW -0031 00 MASW -0021 00 MASW -001 1 00

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. HMIC™ Silicon PIN Diode Switches RoHs Compliant Rev. V6 MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Operation of the MASW Series Switches Operation of the MASW series of PIN switches is achieved by simultaneous application of negative DC current to the low loss switching arm J1, J2, or J3, and positive DC current to the remaining switching arms as shown in the bias connection circuits. DC return is achieved via J1. The control currents should be s upplied by constant current sources. The voltages at these points will not exceed 1.5 volts (1.2V typical) at currents up to + 20mA. In the low loss state, the series diode must be forward biased and the shunt diode reverse biased. In the isolated arm, the shunt diode is forward biased and the series diode is reverse biased. Driver Connections MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 Handling Considerations Cleanliness: These chips should be handled in a clean environment. Electro-Static Sensitivity: The MASW series PIN switches are ESD, Class 1A sensitive (HBM). The proper ESD handling procedures should be used. Control Level (DC Current) at Condition of RF Output J2 J1-J2 -20mA Low Loss +20mA Isolation Control Level (DC Current) at Condition of RF Output Condition of RF Output J2 J3 J1-J2 J1-J3 -20mA +20mA Low Loss Isolation +20mA -20mA Isolation Low Loss Control Level (DC Current) at Cond. of RF Output Cond. of RF Output Cond. of RF Output J2 J3 J4 J1-J2 J1-J3 J1-J4 -20mA +20mA +20mA Low Loss Isolation Isolation +20mA -20mA +20mA Isolation Low Loss Isolation +20mA +20mA -20mA Isolation Isolation Low Loss MASW-001100-1190 and Bias Connections1 20nH 20nH 20pF 20pF 20pF 20pF 100Ω J2 BIAS RF OUTPUT J1 RF INPUT Switch Chip MASW-002100-1191 and Bias Connections1 J1 RF INPUT J2 BIAS RF OUTPUT J3 BIAS RF OUTPUT Switch Chip 20pF 20pF 20pF 20pF 20pF 20pF 20nH 20nH 20nH 100Ω MASW-003100-1192 and Bias Connections1 J2 BIAS RF OUTPUT RF OUTPUT J1 RF INPUT J4 BIAS J3 BIAS RF OUTPUT 20pF 20pF 20pF 20pF 20pF 20pF 20pF 20pF 20nH 20nH 20nH 20nH 100Ω Notes: 1. RLC values are for an operation frequency of 2-18GHz and bias current of ± 20mA per diode.

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. HMIC™ Silicon PIN Diode Switches RoHs Compliant Rev. V6 MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Wire Bonding Thermosonic wedge wire bonding using 0.003” x 0.00025” ribbon or 0.001” diameter gold wire is recommended. A heat stage temperature of approximately 200 oC and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the mini mum required to achieve a good bond. RF bond wires should be kept as short as possible. Mounting The HMIC switches have TiPtAu back metal. They can be die mounted with a gold-tin eutectic solder preform or conductive epoxy. Mounting surface must be clean and flat. Eutectic Die Attachment: An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255oC and a tool tip temperature of 265oC. When hot gas is applied, the tool tip temperature should be 290oC. The chip should not be exposed to temperatures greater than 320oC for more than 20 seconds. No more than three seconds should be required for attachment. Solders containing tin should not be used. Epoxy Die Attachment: Surface of assembly should be preheated to 125-150 oC. A minimum amount of epoxy should be used. A thin epoxy fillet should be visibl e around the perimeter of the chip after placement. Cure epoxy per manufacturer’s schedule. Chip Outline Drawing1,2 DIM INCHES MM MIN. MAX. MIN. MAX. A 0.014 0.018 0.35 0.45 B 0.025 0.029 0.64 0.74 C 0.008 REF 0.20 REF D 0.004 0.006 0.10 0.15 E 0.004 REF 0.10 REF F 0.003 REF 0.08 REF G 0.003 REF 0.08 REF H 0.020 REF 0.52 REF Notes: 1. Topside and backside surfac e metallization is gold, 2.5μm thick typical. 2. Yellow areas indicate wire bonding pads.

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. HMIC™ Silicon PIN Diode Switches RoHs Compliant Rev. V6 MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Chip Outline Drawing1,2 MASW-002100-1191 DIM INCHES MM MIN. MAX. MIN. MAX. A 0.029 0.033 0.73 0.83 B 0.004 0.006 0.10 0.15 C 0.004 REF 0.10 REF D 0.005 REF 0.13 REF E 0.009 REF 0.23 REF F 0.023 REF 0.58 REF G 0.007 REF 0.17 REF H 0.004 REF 0.10 REF Notes: 1. Topside and backside surfac e metallization is gold , 2.5μm thick typical. 2. Yellow areas indicate wire bonding pads

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. HMIC™ Silicon PIN Diode Switches RoHs Compliant Rev. V6 MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Chip Outline Drawing 1, 2 MASW-003100-1192 DIM INCHES MM MIN. MAX. MIN. MAX. A 0.046 0.050 1.16 1.26 B 0.036 0.040 0.92 1.02 C 0.019 REF 0.48 REF D 0.014 REF 0.36 REF E 0.004 REF 0.10 REF F 0.005 REF 0.13 REF G 0.004 0.006 0.10 0.15 H 0.005 REF 0.12 REF J 0.004 REF 0.10 REF Notes: 1. Topside and backside surfac e metallization is gold , 2.5μm thick typical. 2. Yellow areas indicate wire bonding pads

• North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. HMIC™ Silicon PIN Diode Switches RoHs Compliant Rev. V6 MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.

Ordering Information

MASW-001100-11900W Waffle Pack MASW-001100-11900G Gel Pack MASW-002100-11910W Waffle Pack MASW-002100-11910G Gel Pack MASW-003100-11920W Waffle Pack MASW-003100-11920G Gel Pack