MASW-000822-12770T

MASW-000822-12770T_V6 MA-COM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Features

• Exceptional Broadband Performance
• Suitable for Higher Power WiMax & WLAN

Applications

• Lower Loss: Tx = 0.40 dB @ 3.8 GHz, 22mA Rx = 0.60 dB @ 3.8 GHz, 22mA
• Higher Isolation: Rx-Tx = 21 dB @ 3.8 GHz Tx-Rx = 26 dB @ 3.8 GHz
• Higher RF Input Power = 10 W C.W. ( Tx-Ant Port )
• Higher IIP3 = 65 dBm ( Tx-Ant Port ).
• Lower EVM (OFDM): < 1.0% @ 8W Pin, ( Tx-Ant Port )
• Lead-Free 3 mm 16-Lead PQFN Package
• 100% Matte Tin Plating over Copper
• Halogen-Free “Green” Mold Compound
• RoHS* Compliant and 260°C Reflow Compatible

Description

MA-COM’s MASW-000822-12770T is a Broadband, high linearity, common anode PIN diode SPDT switch in a lead-free 3 mm 16-lead PQFN package. The MASW-00822-1277OT is ideally suited for 0.05 - 6.0 GHz applications, including WiMax & WLAN. This SP2T switch offers excellent isolation to loss ratio for both Tx and Rx states. The PIN diode provides exceptional 10 W C.W power handling coupled with 65 dBm IIP3 for maximum switch performance @ 3.8GHz. This MASW-000822-1277OT incorporates a PIN diode die fabricated with M/A-COM’s patented Silicon-Glass HMIC TM process. This chip features two silicon pedestals embedded in a low loss, low dispersion glass. The diodes are formed on the top of each pedestal. The topside is fully encapsulated with silicon nitride and has an additional polymer passivation layer. These polymer protective coatings prevent damage and contamination during handling and assembly. Functional Schematic Pin Configuration 1 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Ordering Information 2 Part Number Package MASW-000822-1277OT 1000 piece reel, 7 inch MASW-000822-001SMB Sample Board 2. Reference Application Note M513 for reel size information. Pin Function Pin Function

1 N/C 9 N/C

2 N/C 10 Rx

3 Tx 11 N/C

4 N/C 12 N/C

5 N/C 13 N/C

6 N/C 14 Ant

7 N/C 15 N/C

8 N/C 16 N/C

HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Rev. V6 MASW-000822-1277OT Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Parameter Conditions Units Min. Typ. Max. Insertion Loss, Rx Rx = +5.0 V @ +22 mA, Tx =+12V @ 0 mA 2.3 - 2.7 GHz 3.3 - 3.8 GHz 4.9 - 5.9 GHz dB 0.55 0.60 0.80 0.70 0.75 0.90 Insertion Loss, Tx Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA 2.3 - 2.7 GHz 3.3 - 3.8 GHz 4.9 - 5.9 GHz dB 0.35 0.40 0.50 0.45 0.55 0.60 Isolation, Tx to RX Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA 2.3 - 2.7 GHz 3.3 - 3.8 GHz 4.9 - 5.9 GHz dB 27.0 24.5 21.0 29.5 26.5 21.5 Isolation, Rx to TX Rx = +5.0 V @ +22 mA, Tx =+12V @ 0 mA 2.3 - 2.7 GHz 3.3 - 3.8 GHz 4.9 - 5.9 GHz dB 22.5 19.5 17.5 24.5 21.5 17.5 Input Return Loss Tx Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA 2.3 - 2.7 GHz 3.3 - 3.8 GHz 4.9 - 5.9 GHz dB Input Return Loss Rx Rx = +5.0 V @ +22 mA, Tx =+12V @ 0 mA 2.3 - 2.7 GHz 3.3 - 3.8 GHz 4.9 - 5.9 GHz dB Electrical Specifications: TA = 25°C, PIN = 0 dBm, Z0 = 50 Ω Electrical Specifications: F = 3.5 GHz, TA = 25°C, Z0 = 50 Ω 3,4,5 Parameter Conditions Units Min. Typ. Max. Tx Input P0.1dB Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Tx To Antenna dBm — 40 Tx Input P1dB Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Tx To Antenna dBm — 45 — Tx 2nd Harmonic Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Pin = + 30 dBm dBc — -68 — Tx 3rd Harmonic Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Pin = + 30 dBm dBc — -84 — Tx Input 3rd Order Intercept Point Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Pin = + 10 dBm F1 = 3.500 GHz, F2 = 3.510 GHz dBm — 65 — Tx C.W. Input Power Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, F= 4.0 GHz dBm — — 40 Rx C.W. Input Power Rx = +5.0 V @ +22 mA, Tx =+12V @ 0 mA, F= 4.0 GHz dBm — — 33 Tx EVM (OFDM) Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Pin = +39 dBm % — 0.8 — Tx EVM (OFDM) Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Pin = +40 dBm % — 1.2 Tx RF Switching Speed ( 10-90% RF Voltage) Tx = +5.0 V@ +22 mA, Rx =+12V @ 0 mA 1MHz Rep Rate in Modulating Mode ns — <500 — 3. Data taken at device RF leads. 4. Typical PIN diode forward voltage = +0.8 V @ 10 mA, +0.85 V @22 mA. 5. Typical PIN diode reverse voltage = +12.0 V

HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Rev. V6 MASW-000822-1277OT Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Absolute Maximum Ratings 6 @ TA = +25 °C (unless otherwise specified) Parameter Absolute Maximum Forward Current + 100 mA Reverse Voltage -100 V Operating Temperature -40 °C to +85 °C Storage Temperature -55 °C to +150 °C Junction Temperature +175 °C Tx Incident C.W. Power 10 W C.W. Tx Peak Incident Power 20 W, 3 µS P.W., 1% Duty Rx Incident C.W. Power 2 W C.W. 6. Exceeding these limits may cause permanent damage. RF State TTL & D.C. Bias Conditions Voltage at Common Anode Low Loss Tx-Ant & Isolation Tx-Rx TTL = 1 + 5V @ 22 mA ( Tx ), + 12V @ 0 mA ( Rx ) + 0.9 V Low Loss Ant-Rx & Isolation Rx-Tx TTL = 0 + 5V @ 22 mA ( Rx ), + 12V @ 0 mA ( Tx ) + 0.9 V D.C. Bias to RF Truth Table Driver and SP2T Schematic with Positive Voltage 7,8,9,10,11 7. Forward Bias Diode Voltage, ΔVf @ 22 mA = + 0.9 V. 8. Reverse Bias Diode = | - ( +12 V - +0.9 V ) | = | - 11.1 | V. DC BlockTX DC Block DC Block Bypass LBias Ant +5 V 180 Ω RX LBiasSP2TLBias Bypass Bypass MADR-008888-000100 DriverLogic Input Ground Cross Section View of M/A-Com PCB

HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Rev. V6 MASW-000822-1277OT Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical Performance Curves: TA = 25°C, Z0 = 50 Ω Insertion Loss Isolation Tx and RX Return Loss -1.0 -0.8 -0.6 -0.4 -0.2 0.0 TX RX Frequency (GHz) -45 -40 -35 -30 -25 -20 -15 TX RX Frequency (GHz) -40 -35 -30 -25 -20 TX RX Frequency (GHz) EVM 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 15 20 25 30 35 40 SPDT Series T/R Switch System EVM Baseline Incident Power (dBm)

HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Rev. V6 MASW-000822-1277OT Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Lead-Free 3 mm 16-Lead PQFN† † Reference Application Note S2803 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Tx Diode Junction Temperature vs. C.W. Input Power @ 4.0 GHz , Tj = 175°C This device is not for saturation power application. Exceeding power dissipation maximum rating might result in device failure. 100 125 150 175 200 225 250 275 300 325 350 20 25 30 35 40 45 P IN (dBm) Max Tj (40.1 dBm) Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These devices are rated at Class 1B Human Body. Proper ESD control techniques should be used when handling these devices.