MAPRST2729-170M MACOM | Alldatasheet
Document overview
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Technical content
Preliminary Specification, Rev 03/30/2005 MAPRST2729-170M RADAR PULSED POWER TRANSISTOR
170 Wpk, 2700 - 2900 MHz, 100μs Pulse Width, 10% Duty Cycle
FEATURES
- Designed for ATC Radar Applications
- NPN Silicon Microwave Power Transistor
- Common Base Configuration
- Broadband Class C Operation
- High Efficiency Interdigitated Geometry
- Diffused Emitter Ballasting Resistors
- Gold Metallization System
- Internal Input and Output Impedance Matching
- Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Units Collector-Emitter Voltage V CES 65 V Emitter-Base Voltage V EBO 3.0 V Collector Current (Peak) I C 27 A Power Dissipation @ +25°C P D TBD W Storage Temperature T STG -65 to +200 °C Junction Temperature T J 200 °C ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units Test Conditions Collector-Emitter Breakdown Voltage BVCES 65 - V I C=50mA Collector-Emitter Leakage Current ICES - 15 mA V CE=36V Thermal Resistance R TH - .25 (TBD) °C/W V CC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Power Output P out 170 - Wpk V CC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Power Gain G P 8.5 - dB V CC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Collector Efficiency ηC 40 - % V CC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Input Return Loss RL 10 - dB V CC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Load Mismatch Stability VSWR-S - 1.5:1 - V CC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz Load Mismatch Tolerance VSWR-T - 2:1 - V CC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz BROADBAND TEST FIXTURE IMPEDANCE F (MHz) Z IF (Ω) Z OF (Ω) 2700 (TBD) (TBD) 2800 (TBD) (TBD) 2900 (TBD) (TBD) M/A-COM, RF POWER INNOVATIONS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501 (310) 320-6160 • FAX (310) 618-9191 M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE.