MAPRST1214-150UF MA-COM | Alldatasheet

Document overview

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Technical content

Features

  • NPN silicon microwave power transistors
  • Common base configuration
  • Broadband Class C operation
  • High efficiency inter-digitized geometry
  • Diffused emitter ballasting resistors
  • Gold metallization system
  • Internal input and output impedance matching
  • Hermetic metal/ceramic package
  • RoHS compliant Outline Drawing Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage I C = 10mA BV CES 70 - V Collector-Emitter Leakage Current V CE = 40V I CES - 4.0 mA Thermal Resistance Vcc = 36V, Pin = 27W F = 1.2, 1.3, 1.4 GHz RTH(JC) - 0.3 °C/W Output Power Vcc = 36V, Pin = 27W F = 1.2, 1.3, 1.4 GHz POUT 150 - W Power Gain Vcc = 36V, Pin = 27W F = 1.2, 1.3, 1.4 GHz GP 7.4 - dB Collector Efficiency Vcc = 36V, Pin = 27W F = 1.2, 1.3, 1.4 GHz ηC 45 - % Input Return Loss Vcc = 36V, Pin = 27W F = 1.2, 1.3, 1.4 GHz RL - -9 dB Pulse Droop Vcc = 36V, Pin = 27W F = 1.2, 1.3, 1.4 GHz Droop - 0.5 dB Load Mismatch Tolerance Vcc = 36V, Pin = 27W F = 1.2, 1.3, 1.4 GHz VSWR-T - 3:1 - Load Mismatch Stability Vcc = 36V, Pin = 27W F = 1.2, 1.3, 1.4 GHz VSWR-S - 1.5:1 - Gain Flatness Vcc = 36V, Pin = 27W F = 1.2, 1.3, 1.4 GHz ΔG - 1.25 dB Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 70 V Emitter-Base Voltage VEBO 4.0 V Collector Current (Peak) IC 19.5 A Power Dissipation @ +25°C PTOT 580 W Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C

Radar Pulsed Power Transistor 150W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM Products Released, 30 May 07 MAPRST1214-150UF

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical RF Performance Freq. (GHz) Pin (W) Pout (W) Gain (dB) Ic (A) Eff (%) RL (dB) VSWR-S (1.5:1) VSWR-T (3:1) Droop (dB) 0.08 0.13 0.12 Gain vs. Frequency Collector Efficiency vs. Frequency 7.0 7.5 8.0 8.5 9.0 Fre q (GHz) Gain (dB) Fre q (GHz) Efficiency (%)

Radar Pulsed Power Transistor 150W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM Products Released, 30 May 07 MAPRST1214-150UF

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. RF Power Transfer Curve (Output Power Vs. Input Power) F (GHz) ZIF (Ω) ZOF (Ω) RF Test Fixture Impedance 100 125 150 175 200 225 18 21 24 27 30 33 36 Input Power (watts) Output Power (watts) F=1.2GHz F=1.3GHz F=1.4GHz

Radar Pulsed Power Transistor 150W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM Products Released, 30 May 07 MAPRST1214-150UF

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Test Fixture Circuit Dimensions Test Fixture Assembly