MAPRST1214-030UF MACOM | Alldatasheet
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RADAR PULSED POWER TRANSISTOR 30W, 1.2-1.4 GHz, 6ms Pulse Width, 25% Duty Cycle FEATURES OUTLINE DRAWING ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package ∗ Typcial Second Harmonic Level < -30dBc ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Units Collector-Emitter Voltage V CES 70 V Emitter-Base Voltage V EBO 3.0 V Collector Current (Peak) I C 4.8 A Total Power Dissipation @ +25°C PTOT 145 W Junction Temperature T J 200 °C Storage Temperature T STG -65 to +200 °C ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units Test Conditions Collector-Emitter Breakdown Voltage BVCES 70 - V I C = 10 mA Collector-Emitter Leakage Current I CES - 2.0 mA V CE = 40V Output Power POUT 30 - W VCC = 36V, Pin = 5.3W, F= 1.2, 1.3, 1.4 GHz Collector Efficiency ηc 45 - % VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz Input Return Loss RL 9 - dB VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz Load Mismatch Tolerance VSWR-T - 3:1 - VCC = 36V, PIN = 5.3W, F= 1.2, 1.3, 1.4 GHz BROADBAND TEST FIXTURE IMPEDANCE F (MHz) Z IF (Ω) Z OF (Ω) 1200 6.7 - j6.9 14.3 + j2.4 1300 6.5 - j6.5 11.2 - j0.8 1400 6.3 - j4.5 7.2 - j0.1 TEST FIXTURE INPUT CIRCUIT ZIF TEST FIXTURE OUTPUT CIRCUIT ZOF50Ω 50Ω