MAPRST0912-350 MACOM | Alldatasheet
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Preliminary Specification, Rev 02/03/2004 MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR
350 Watts, 960 - 1215 MHz, 10μs Pulse Width, 10% Duty Cycle
∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Units Collector-Emitter Voltage V CES 65 V Emitter-Base Voltage V EBO 3.0 V Collector Current (Peak) I C 32.5 A Total Power Dissipation @ +25°C PTOT 1340 W Junction Temperature T J 200 °C Storage Temperature T STG -65 to +200 °C ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units Test Conditions Collector-Emitter Breakdown Voltage BV CES 65 - V I C=50mA Collector-Emitter Leakage Current I CES - 15 mA V CE=50V Thermal Resistance R TH - 0.13 °C/W V CC=50 V, PIN=40 W, F=960, 1090, 1215 MHz Output Power P OUT 350 - W V CC=50 V, PIN=40 W, F=960, 1090, 1215 MHz Collector Efficiency ηC 45 - % V CC=50 V, PIN=40 W, F=960, 1090, 1215 MHz Input Return Loss RL 9 - dB V CC=50 V, PIN=40 W, F=960, 1090, 1215 MHz Load Mismatch Tolerance VSWR-T - 10:1 - V CC=50 V, PIN=40 W, F=960 MHz Load Mismatch Stability VSWR-S 1.5:1 VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz All spurious signals shall be < -60dBc below carrier, except F = Fo ± ½ Fo shall be < -40dBc BROADBAND TEST FIXTURE IMPEDANCE F (MHz) Z IF (Ω) Z OF (Ω) 960 1.8 - j1.7 1.7 - j1.7 1030 1.7 - j1.4 1.8 - j1.2 1090 1.6 - j1.2 1.9 - j0.8 1150 1.4 - j1.0 1.9 - j0.6 1215 1.2 - j0.8 2.0 - j0.2 M/A-COM RF POWER INNOVATIONS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501 (310) 320-6160 • FAX (310) 618-9191 M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE.
Preliminary Specification, Rev 02/03/2004 MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR RF PERFORMANCE - OUTPUT POWER VS. INPUT POWER 150 250 350 450 550 20 25 30 35 40 45 50 Pin (watts) Pout (watts)
960 MHz 1090 MHz 1215 MHz
TYPICAL RF PERFORMANCE - COLLECTOR EFFICIENCY VS. INPUT POWER 20 25 30 35 40 45 50 Pin (watts) Collector Efficiency (%) M/A-COM RF POWER INNOVATIONS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501 (310) 320-6160 • FAX (310) 618-9191 M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE.