MAPRST0912-350 MA-COM | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- NPN silicon microwave power transistors
- Common base configuration
- Broadband Class C operation
- High efficiency inter-digitized geometry
- Diffused emitter ballasting resistors
- Gold metallization system
- Internal input and output impedance matching
- Hermetic metal/ceramic package
- RoHS Compliant Outline Drawing Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage I C = 50mA BV CES 65 - V Collector-Emitter Leakage Current V CE = 50V I CES - 15 mA Thermal Resistance Vcc = 50V, Pin = 40W F = 960, 1090, 1215 MHz RTH(JC) - 0.13 °C/W Output Power Vcc = 50V, Pin = 40W F = 960, 1090, 1215 MHz PO 350 - W Power Gain Vcc = 50V, Pin = 40W F = 960, 1090, 1215 MHz GP 9.4 - dB Collector Efficiency Vcc = 50V, Pin = 40W F = 960, 1090, 1215 MHz ηC 45 - % Input Return Loss Vcc = 50V, Pin = 40W F = 960, 1090, 1215 MHz RL - -9 dB Load Mismatch Stability Vcc = 50V, Pin = 40W F = 960 MHz VSWR-T - 10:1 - Load Mismatch Tolerance Vcc = 50V, Pin = 40W F = 960, 1090, 1215 MHz VSWR-S - 1.5:1 - Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 65 V Emitter-Base Voltage VEBO 3.0 V Collector Current (Peak) IC 32.5 A Power Dissipation @ +25°C PTOT 1.34 kW Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C
Avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10µs Pulse, 10% Duty MAPRST0912-350 M/A-COM Products Released, 30 May 07
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Gain vs. Frequency Typical RF Performance Freq. (MHz) Pin (W) Pout (W) Gain (dB) ΔGain (dB) Ic (A) Eff (%) RL (dB) VSWR-S (1.5:1) VSWR-T (10:1) P1dB Overdrive Pout Δ Po 0.23 Note: ΔPo(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 40W. Collector Efficiency vs. Frequency 8.4 8.8 9.2 9.6 10.0 10.4 950 1050 1150 1250 Fre q (M Hz) Gain (dB) 950 1050 1150 1250 Fre q (M Hz) Efficiency (%)
Avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10µs Pulse, 10% Duty MAPRST0912-350 M/A-COM Products Released, 30 May 07
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. RF Power Transfer Curve (Output Power Vs. Input Power) Broadband Test Fixture Impedance 250 300 350 400 450 500 25 30 35 40 45 50 Input Power (watts) Output Power (watts)
960 MHz 1090 MHz 1215 MHz
F (MHz) ZIF (Ω) ZOF (Ω) 960 1.8 - j1.7 1.7 - j1.7 1030 1.7 - j1.4 1.8 - j1.2 1090 1.6 - j1.2 1.9 - j0.8 1150 1.4 - j1.0 1.9 - j0.6 1215 1.2 - j0.8 2.0 - j0.2
Avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10µs Pulse, 10% Duty MAPRST0912-350 M/A-COM Products Released, 30 May 07
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Test Fixture Circuit Dimensions Test Fixture Assembly