MAPR-001011-850S00 MACOM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- NPN Silicon Microwave Power Transistors
- Common Base Configuration
- Broadband Class C Operation
- High Efficiency Inter digitized Geometry
- Diffused Emitter Ballasting Resistors
- Gold Metallization System
- Internal Input and Output Impedance Matching
- Hermetic Metal/Ceramic Package
- RoHS Compliant Outline Drawing Electrical Specifications: TC = 25 ± 5°C (ROOM AMBIENT ) Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage I C = 250mA BV CES 80 - V Collector-Emitter Leakage Current V CE = 50V I CES - 30 mA Thermal Resistance Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz RTH(JC) - 0.015 °C/W Input Power Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz PIN - 141 W Power Gain Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz GP 7.8 - dB Collector Efficiency Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz ηC 42 - % Input Return Loss Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz RL - -9 dB Load Mismatch Tolerance Vcc=50V, Pout=850W F = 1025 MHz VSWR-T - 5:1 - Load Mismatch Stability * Vcc=50V, Pout=850W F = 1025, 1090, 1150 MHz VSWR-S - 1.5:1 - Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 80 V Emitter-Base Voltage VEBO 3.0 V Collector Current (Peak) IC 250 A Power Dissipation @ +25°C PTOT 11.6 kW Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C * All spurious signals shall be < -60dBc below carrier, except F = Fo ± ½ Fo shall be < -40dBc
AVIONICS PULSED POWER TRANSISTOR
850 WATTS, 1025-1150 MHz, 10us PULSE, 1% DUTY MAPR-001011-850S00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information.
11 Jan 2007
Gain vs. Frequency Typical RF Performance Freq. (MHz) Pin (W) Pout (W) Gain (dB) ΔGain (dB) Ic (A) Eff (%) RL (dB) VSWR-S (1.5:1) VSWR-T (5:1) P1dB Overdrive Pout Δ Po 0.25 Note: ΔPo(dB) is the difference between Pout at 1dB overdrive and Pout at Pout=850W. Collector Efficiency vs. Frequency 7.4 7.8 8.2 8.6 9.0 9.4 1000 1050 1100 1150 1200 Fre q (M Hz) Gain (dB) 1000 1050 1100 1150 1200 Fre q (M Hz) Efficiency (%)
AVIONICS PULSED POWER TRANSISTOR M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information.
(Output Power Vs. Input Power) F (MHz) Z IF (Ω) Z OF (Ω) 1025 1.7 - j1.8 0.8 - j1.3 1090 1.4 - j1.2 0.8 - j1.0 1150 1.3 - j0.7 0.8 - j0.8 Broadband Test Fixture Impedance 400 600 800 1000 1200 70 90 110 130 150 170 Pin (watts) Pout (watts)
1025 MHz 1090 MHz 1150 MHz
AVIONICS PULSED POWER TRANSISTOR M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information.
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