MAPR-000912-500S00 MACOM | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- NPN Silicon Microwave Power Transistors
- Common Base Configuration
- Broadband Class C Operation
- High Efficiency Inter digitized Geometry
- Diffused Emitter Ballasting Resistors
- Gold Metallization System
- Internal Input and Output Impedance Matching
- Hermetic Metal/Ceramic Package
- RoHS Compliant Outline Drawing Electrical Specifications: TC = 25 ± 5°C (ROOM AMBIENT ) Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage I C = 80mA BV CES 80 - V Collector-Emitter Leakage Current V CE = 40V I CES - 15 mA Thermal Resistance Vcc = 50V, Pin = 63W F = 960, 1090, 1215 MHz RTH(JC) - 0.08 °C/W Output Power Vcc = 50V, Pin = 63W F = 960, 1090, 1215 MHz PO 500 - W Power Gain Vcc = 50V, Pin = 63W F = 960, 1090, 1215 MHz GP 9.0 - dB Collector Efficiency Vcc = 50V, Pin = 63W F = 960, 1090, 1215 MHz ηC 45 - % Input Return Loss Vcc = 50V, Pin = 63W F = 960, 1090, 1215 MHz RL - -9 dB Load Mismatch Tolerance Vcc = 50V, Pin = 63W F = 960 MHz VSWR-T - 3:1 - Load Mismatch Stability Vcc = 50V, Pin = 63W F = 960, 1090, 1215 MHz VSWR-S - 1.5:1 - Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 80 V Emitter-Base Voltage VEBO 3.0 V Collector Current (Peak) IC 52.5 A Power Dissipation @ +25°C PTOT 2.2 kW Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C
AVIONICS PULSED POWER TRANSISTOR
500 WATTS, 960-1215 MHz, 10us PULSE, 10% DUTY MAPR-000912-500S00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information.
11 Jan 2007
Gain vs. Frequency Typical RF Performance Freq. (MHz) Pin (W) Pout (W) Gain (dB) ΔGain (dB) Ic (A) Eff (%) RL (dB) VSWR-S (1.5:1) VSWR-T (3:1) P1dB Overdrive Pout Δ Po 0.33 Note: ΔPo(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 63W. 8.0 8.4 8.8 9.2 9.6 10.0 950 1050 1150 1250 Fre q (M Hz) Gain (dB) 950 1050 1150 1250 Fre q (M Hz) Efficiency (%) Collector Efficiency vs. Frequency
AVIONICS PULSED POWER TRANSISTOR M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information.
(Output Power Vs. Input Power) 300 400 500 600 700 40 50 60 70 80 Input Power (watts) Output Power (watts)
960 MHz 1090 MHz 1215 MHz
F (MHz) Z IF (Ω) Z OF (Ω) 960 1.3 - j1.4 1.2 - j1.4 1025 1.3 - j1.1 1.2 - j1.1 1090 1.2 - j0.9 1.3 - j0.9 1150 1.2 - j0.8 1.4 - j0.7 1215 1.0 - j0.8 1.3 - j0.6 Broadband Test Fixture Impedance
AVIONICS PULSED POWER TRANSISTOR M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information.
Test Fixture Circuit Dimensions Test Fixture Assembly