MAPLST2122-060CF MACOM | Alldatasheet

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Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. Q 60W output power at P1dB (CW) Q 12dB Minimum Gain at P1dB (CW) Q W-CDMA Typical Performance: (28V DC, -45dB ACPR @ 4.096MHz) Q Output Power: 7.5W (typ.) Q Gain: 12dB (typ.) Q Efficiency: 16% (typ.) Q 10:1 VSWR Ruggedness (CW @ 60W, 28V, 2110MHz) MAPLST2122-060CF Package Style 4/6/2005 Preliminary Maximum Ratings Parameter Symbol Rating Units Drain—Source Voltage VDSS 65 Vdc Gate—Source Voltage VGS 20 Vdc Total Power Dissipation @ TC = 25 °C PD 175 W Storage Temperature TSTG -40 to +150 °C Junction Temperature TJ +200 °C Characteristic Symbol Thermal Resistance, Junction to Case RΘJC Max 1.0 Unit ºC/W Thermal Characteristics NOTE— CAUTION—MOS devices are susceptible to damage from electros tatic charge. Precautions in handling and packaging MOS devices should be observed. MAPLST2122-060CF

RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V MAPLST2122-060CF 4/6/2005 Preliminary Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) IDSS — — 1 µAdc Gate—Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS — — 1 µAdc ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) FUNCTIONAL TESTS (In M/A-COM Test Fixture) (2) Characteristic Symbol Min Typ Max Unit DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) IDSS — — 1 µAdc Gate—Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 1 mA) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mA) VDS(Q) 2 — 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) VDS(on) — 0.4 — Vdc Forward Transconductance (VGS = 10 Vdc, ID = 1 A) Gm — 2.4 — S DYNAMIC CHARACTERISTICS @ 25ºC Input Capacitance (Including Input Matching Capacitor in Package) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Ciss — 180 — pF Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Coss — 65 — pF Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 3.0 — pF RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Gps — 12.0 — dB Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) EFF (ŋ) — 35 — % Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) IMD — -30 -28 dBc Input Return Loss (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) IRL — -12 — dB Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Gps — 12.0 — dB Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) EFF (ŋ) — 35 — % Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IMD — -30 -28 dBc Input Return Loss (VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL — -12 -9 dB Output VSWR Tolerance (VDD = 28 Vdc, POUT = 60 W, IDQ = 500 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test

RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V MAPLST2122-060CF 4/6/2005 Preliminary Graph 1. W-CDMA: Power Gain and Drain Efficiency vs. Output Power Graph 2. W-CDMA: Adjacent Channel Power Ratio vs. Output Power VDD = 28V, f = 2.17GHz, IDQ = 700mA, 3.84MHz BW, 16 DPCH 25 30 35 40 POUT (dBm) Avg. Gain (dB) Efficiency (%) Gain Efficiency VDD = 28V, f = 2.17GHz, IDQ = 700mA, 3.84MHz BW, 16 DPCH -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 25 27 29 31 33 35 37 39 41 POUT (dBm) Avg. ACPR (dBc) 5MHz Offset 10MHz Offset

RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V MAPLST2122-060CF 4/6/2005 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. „ North America: Tel. (800) 366-2266 „ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 „ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020