MAPLST2122-015CF MACOM | Alldatasheet

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Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. Q 15W Output Power at P1dB (CW) Q 12dB Minimum Gain at P1dB (CW) Q W-CDMA Typical Performance: (28V DC, -45dBc ACPR, 5MHz offset, 4.096MHz BW) Q Output Power: 2.2W (typ.) Q Gain: 13dB (typ.) Q Efficiency: 17% (typ.) Q 10:1 VSWR Ruggedness (CW @ 15W, 28V, 2110MHz) MAPLST2122-015CF Package Style 8/20/03 Preliminary Maximum Ratings Parameter Symbol Rating Units Drain—Source Voltage VDSS 65 Vdc Gate—Source Voltage VGS 20 Vdc Total Power Dissipation @ TC = 25 °C PD 54.7 W Storage Temperature TSTG -40 to +150 °C Junction Temperature TJ +200 °C Characteristic Symbol Thermal Resistance, Junction to Case RΘJC Max 3.2 Unit ºC/W Thermal Characteristics NOTE— CAUTION—MOS devices are susceptible to damage from electros tatic charge. Precautions in handling and packaging MOS devices should be observed.

RF Power LDMOS Transistor, 2110 — 2170 MHz, 15W, W-CDMA MAPLST2122-015CF 8/20/2003 Preliminary Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) IDSS — — 1 µAdc Gate—Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS — — 1 µAdc ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) FUNCTIONAL TESTS (In M/A-COM Test Fixture) (2) Characteristic Symbol Min Typ Max Unit DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) IDSS — — 1 µAdc Gate—Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS — — 1 µAdc Gate Threshold Voltage (Vds = 28 Vdc, Id = 1 mA) VGS(th) 2.5 3.0 4.0 Vdc Gate Quiescent Voltage (Vds = 28 Vdc, Id = 250 mA) VDS(Q) 2.5 3.5 4.5 Vdc Drain-Source On-Voltage (Vgs = 10 Vdc, Id = 1 A) VDS(on) — 0.2 — Vdc Forward Transconductance (Vgs = 10 Vdc, Id = 1 A) Gm — 1.0 — S DYNAMIC CHARACTERISTICS @ 25ºC Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 0.9 — pF RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (2) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2170.0 MHz, f2 = 2170.1 MHz) Gps 12 12.8 — dB Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2170.0 MHz, f2 = 2170.1 MHz) EFF (ŋ) — 32 — % Two-Tone Third Order Intermod (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2170.0 MHz, f2 = 2170.1 MHz) IMD — -30 — dBc Input Return Loss (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL — -12 — dB Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz) Gps 12 12.8 — dB Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz) EFF (ŋ) — 32 — % Two-Tone Third Order Intermod (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz) IMD — -30 — dBc Input Return Loss (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz) IRL — -12 -10 dB Output VSWR Tolerance (VDD = 28 Vdc, Pout = 30 W, IDQ = 250 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test

RF Power LDMOS Transistor, 2110 — 2170 MHz, 15W, W-CDMA MAPLST2122-015CF 8/20/2003 Preliminary Graph 1. W-CDMA Power Gain and Drain Efficiency vs. Output Power Graph 2. W-CDMA Adjacent Channel Power Ratio vs. Output Power 5MHz Offset/4.096MHz BW, 15 DTCH -55 -50 -45 -40 -35 -30 0.20 0.25 0.32 0.40 0.50 0.63 0.79 1.00 1.26 1.58 2.00 2.51 3.16 POUT(W- Avg.) ACPR (dBc) ACPR (150mA) ACPR (100mA) 5MHz Offset/4.096MHz BW, 15 DTCH 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 0.20 0.25 0.32 0.40 0.50 0.63 0.79 1.00 1.26 1.58 2.00 2.51 3.16 POUT(W-Avg.) Gain(dB) 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 Efficiency (%) Gain (150mA) Gain (100mA) Eff (150mA) Eff (100mA)

RF Power LDMOS Transistor, 2110 — 2170 MHz, 15W, W-CDMA MAPLST2122-015CF 8/20/2003 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. „ North America: Tel. (800) 366-2266 „ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 „ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020