MAPL-000817-015CPC MA-COM | Alldatasheet
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Technical content
LDMOS RF Line Power FET Transistor
15 W , 800-1700 MHz, 26V
Released - Rev. 07.08 MAPL-000817-015CPC
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Designed for broadband commercial applications up to 1.7GHz
- High gain, high efficiency and high linearity
- Aluminum-Copper Metallization for high reliability
- RoHS Compliant
- Typical P1dB performance at 960MHz, 26Vdc, CW Typical power output: 16.5W Gain: 17.0dB Efficiency: 50% 10:1 VSWR ruggedness at 15W, 26Vdc, 960MHz Product Image MAPL-000817-015CPC MAXIMUM RATINGS THERMAL CHARACTERISTICS NOTE— CAUTION—MOS devices are susceptible to damage from electrostati c charge. Precautions in handling and packaging MOS devices should be observed. Parameter Symbol Rating Units Drain—Source Voltage VDSS 65 Vdc Gate—Source Voltage VGS +20, -20 Vdc Total Power Dissipation @ TC = 25 °C PD 31 W Storage Temperature TSTG -65 to +150 °C Junction Temperature TJ 200 °C
LDMOS RF Line Power FET Transistor Released - Rev. 07.08 MAPL-000817-015CPC
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. (1) Device specifications obtained on a Production Test Fixture. Characteristic Symbol Min Typ Max Unit DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) V(BR)DSS 65 — — Vdc Gate Quiescent Voltage (Vds = 26 Vdc, Id = 100 mA) VDS(Q) 3 — 5 Vdc Drain-Source On-Voltage (Vgs = 10 Vdc, Id = 1 A) VDS(on) — 0.25 — Vdc RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (1) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W) GP — 17 — dB Drain Efficiency (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W) EFF (ŋ) — 50 — % Input Return Loss (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W) IRL — -10 — dB Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 150 mA, f = 960 MHz, POUT = 15 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 150 mA, f = 1670 MHz, POUT = 15 W) GP 13.0 15 — dB Drain Efficiency (VDD = 26 Vdc, IDQ = 150 mA, f = 1670 MHz, POUT = 15 W) EFF (ŋ) 45 50 — % Input Return Loss (VDD = 26 Vdc, IDQ = 150 mA, f = 1670 MHz, POUT = 15 W) IRL — -10 -8 dB
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
Figure 1. 1620-1670 MHz Test Fixture Schematic
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
Figure 2. 1620—1670 MHz Test Fixture Component Layout
LDMOS RF Line Power FET Transistor Released - Rev. 07.08 MAPL-000817-015CPC
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Graph 1. 1620, 1670MHz: CW Power Gain and Drain Efficiency vs. Output Power Graph 2. 920, 940, 960MHz: CW Power Gain and Drain Efficiency vs. Output Power
LDMOS RF Line Power FET Transistor Released - Rev. 07.08 MAPL-000817-015CPC
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. PACKAGE DIMENSIONS