MAPL-000817-015C00 MACOM | Alldatasheet

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RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015C00 1/11/06 Preliminary Characteristic Symbol Min Typ Max Unit DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 30 µAdc) V(BR)DSS 65 — — Vdc Gate Threshold Voltage (Vds = 26 Vdc, Id = 100 mA) VGS(th) 2 — 5 Vdc Gate Quiescent Voltage (Vds = 26 Vdc, Id = 100 mA) VDS(Q) 3 — 5 Vdc Drain-Source On-Voltage (Vgs = 10 Vdc, Id = 1 A) VDS(on) — 0.25 — Vdc RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (1) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W) GP — 17 — dB Drain Efficiency (VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W) EFF (ŋ) — 50 — % Input Return Loss (VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W) IRL — -10 — dB Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 100 mA, f = 1670 MHz, POUT = 15 W) GP — 12.5 — dB Drain Efficiency (VDD = 26 Vdc, IDQ = 100 mA, f = 1670 MHz, POUT = 15 W) EFF (ŋ) — 50 — % Input Return Loss (VDD = 26 Vdc, IDQ = 100 mA, f = 1670 MHz, POUT = 15 W) IRL — -10 — dB (1) Device specifications obtai ned on a Production Test Fixture.

Figure 5. MAPL-000817-015C00 Pin Connections

RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015C00 1/11/06 Preliminary Graph 1. 925, 960MHz: CW Power Gain and Drain Efficiency vs. Output Power Graph 2. 925, 960 MHz: 2 Tone Intermodulation Distortion vs. Output Power CW, 26V, IDQ=100mA 30 32 34 36 38 40 42 44 Pout (dBm) Gain (dB) Drain Efficiency (%)Gain 960 MHz Gain 925 MHz Eff. 960MHz Eff. 925 MHz CW, 26V, IDQ=100mA 30 32 34 36 38 40 42 44 Pout (dBm) Gain (dB) Drain Efficiency (%)Gain 960 MHz Gain 925 MHz Eff. 960MHz Eff. 925 MHz 26V, IDQ=100mA, 100kHz Tone Spacing -70 -60 -50 -40 -30 -20 -10 20 25 30 35 40 Pout (dBm) IMD (dBc) IMD3 (960 MHz) IMD5 (960MHz) IMD3(925MHz) IMD5(925MHz) 26V, IDQ=100mA, 100kHz Tone Spacing -70 -60 -50 -40 -30 -20 -10 20 25 30 35 40 Pout (dBm) IMD (dBc) IMD3 (960 MHz) IMD5 (960MHz) IMD3(925MHz) IMD5(925MHz)

RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015C00 1/11/06 Preliminary Graph 3. 1620, 1670MHz: CW Power Gain and Drain Efficiency vs. Output Power Graph 4. 1620, 1670MHz: 2 Tone Intermodulation Distortion vs. Output Power CW, 26V, IDQ=100mA 30 32 34 36 38 40 42 Pout (dBm) Gain (dB) Drain Efficiency (%) Gain 1670MHz Gain 1620MHz Eff. 1670MHz Eff. 1620MHz CW, 26V, IDQ=100mA 30 32 34 36 38 40 42 Pout (dBm) Gain (dB) Drain Efficiency (%) Gain 1670MHz Gain 1620MHz Eff. 1670MHz Eff. 1620MHz 26V, 1670MHz, 100kHz Tone Spacing -70 -60 -50 -40 -30 -20 -10 33 34 35 36 37 38 39 Pout Avg (dBm) IMD (dBc) IMD3 100mA IMD5 100mA IMD3 160mA IMD5 160mA 26V, 1670MHz, 100kHz Tone Spacing -70 -60 -50 -40 -30 -20 -10 33 34 35 36 37 38 39 Pout Avg (dBm) IMD (dBc) IMD3 100mA IMD5 100mA IMD3 160mA IMD5 160mA

RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015C00 1/11/06 Preliminary Test Fixture Circuit Dimensions Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. „ North America: Tel. (800) 366-2266 „ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 „ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020