MAP3201

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Technical content

Features

H /bdash2H PWMHInterfaceHLEDHDriverH /bdash2H CurrentHModeHControlHTypeH /bdash2H AutoHRestartHModeHProtectionH /bdash2H OutputHOverHVoltageHProtectionHH /bdash2H ProgrammableHLEDHShortHCurrentHProtectionH /bdash2H PowerHSupplyHVCC =12VH(MaxH20V)H /bdash2H ProgrammableHLEDHCurrentHSetH(FBP)H /bdash2H ProgrammableHBoostHswitchHcurrentHlimitH /bdash2H SynchronizationHtoHpeerktokpeerHorHHexternalHclockH /bdash2H FullyHRoHSHCompliantH Application H RGBHandHWhiteHLEDHBacklightingHapplicationsH GeneralHLEDHlightingHapplicationsHH H H H H

H H H Jan.H2009.HVersionH1.0H H H H H H H H H MagnaChipHSemiconduc torHLtd . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH

Ordering Information

H H HH Absolute Maximum Ratings H PARAMETER VALUE UNIT VCCH k0.3H~H20H VH GATE,HPWMOH k0.3H~H20H VH AUTO,CS,HISET,RT,SYNC,CLIM,REF,OVP,PWMI,COMP,FBP,FBNH k0.3H~H5H VH OperatingHJunctionHTemperatureHRangeH k40H~H125H ℃H StorageHTemperatureHRangeH k65H~H150H ℃H LeadHtemperature(soldering,H10secH)H 260H ℃H ThermalHResistanceH(θJA )H 105H /W ℃ H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H Part Number Part Marking Junction Temperature Range Package RoHS Status MAP3201SIHH SELC2010MH k40 ℃HtoH+125 ℃H 16HLeadsHSOICH HalogenHFreeH

H H H Jan.H2009.HVersionH1.0H H H H H H H H H MagnaChipHSemiconduc torHLtd . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH

Electrical Characteristics

VCC =12V,HVPWMI=5V,HC GATE =C PWMO =1nF,HTa=25 ,HunlessHotherwiseHspecified℃ H SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT SUPPLY VCC,OP H InputHvoltageHrangeH Ta=k40 H~H85 ℃ ℃ H 8.5H H 18H VH IQH OperationHquiescentHcurrentH PWMIH=0VH kH 1.2H 2H mAH VUVLO_R H UnderkvoltageHlockoutHthresholdH VCCHrisingH 7.5H 8H 8 .5H VH VUVLO_F H UnderkvoltageHlockoutHhysteresisH VCCHfallingH kH 1H k H VH REFERENCE VREF H ReferenceHpinHvoltageH Ta=k40 H~H85℃ ℃ H 4.90H 5.00H 5.10H VH Ta=25℃H 4.95H 5.00H 5.05H VH VREFLIH LineHregulationH IREF =0uA,HVPWMI=0V,HH CREF =0.1uFH kH kH 0.02H %/VH VREFLO H LoadHregulationH IREF =0~500uA,HVREF =0V,H CREF =0.1uFH kH kH 1H %/mA H GATE ISOUR H GateHshortHcircuitHcurrentH V GATE =0,HVCC H=12VH 0.4H kH kH AH ISINK H GateHsinkHcurrentH V GATE =12V,HVCC H=12VH 0.8H kH kH AH TRISE H GATEHoutputHriseHtimeH C GATE =1nF,HV CC =12VH kH 50H 85H nsH TFALL H GATEHoutputHfallHtimeH C GATE =1nF,HVCC H=12VH kH 25H 45H nsH Current Sense TBLANK H LeadingHEdgeHBlankingH H 100H kH 375H nsH TDELAY1 H DelayHtoHoutputHofHCSHcomparator(2)H VCOMP =5V,HVCLIM =5V,HH VCS =0VHtoH600mVHstepH H kH 180H nsH TDELAY2 H DelayHtoHoutputHofHCLIMTHcomparator(2)HVCOMP H=5V,HCLIM=300mV,HH VCS=0VHtoH400mVHstepH kH kH 180H nsH Internal Transconductance Opamp AVH OpenHloopHDCHGain(2)H kH kH 50H kH dBH VCM H InputHcommonkmodeHrangeH H k0.3H kH 3H VH VOH OutputHVoltageHrangeH VCC=12VH 0.6H kH 2.75H VH gmH Transconductance(2)H H 400H 670H 1000H uA/VH VOFFSET H InputHoffsetHvoltageH H k5H kH 5H mVH IBIAS H InputHBiasHcurrentH H kH 0.5H 1H nAH H

H H H Jan.H2009.HVersionH1.0H H H H H H H H H MagnaChipHSemiconduc torHLtd . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH Electrical Characteristics (Continued) VCC =12V,HVPWMI=5V,HC GATE =C PWMO=1nF,HTa=25 ,HunlessHotherwiseHspecified℃ H SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT Oscillator FOSC H OscillatorHfrequencyH (H100KHzH~H400KHzH)H Ta=25 ,HRT=500℃ ㏀H 95H 100H 105H kHzH Ta=k40 H~H85 ,HRT=500℃ ℃ ㏀H 90H 100H 110H kHzH Ta=k40 H~H85 ,HRT=110℃ ℃ ㏀H 340H 400H 460H kHzH DMAX H MaximumHdutyHcycleH H kH 90H kH %H Synchronizing ( External Input ) VIL_SYNC H SYNCHInputHvoltageHLowHlevelH kH H kH 0.8H VH VIH_SYNC H SYNCHInputHvoltageHhighHlevelH kH 2.0H kH kH VH TSYNC_MIN H SYNCHminimumHinputHpulseHwidthH VSYNCH=H0VHtoH5VH 20 H kH kH nsH TSYNC_MAX H SYNCHmaximumHinputHpulseHwidthH VSYNCH=H0VHtoH5VH kH kH 0.05H /F OSC H nsH PWM Input VPWMI(LO)H PWMIHinputHLowHvoltageH kH kH kH 0.8H VH VPWMI(HI)H PWMIHinputHHighHvoltageH kH 2.0H kH H VH RPWMIH PWMIHpullkdownHresistanceH VPWMI=5VH 50H 100H 150H ㏀H PWM Output TRISE,PWMO H PWMHOutputHriseHtimeH 1nFHcapacitanceHatHPWMOH kH kH 3 00H nsH TFALL,PWMO H PWMHOutputHfallHtimeH 1nFHcapacitanceHatHPWMOH H kH 20 0H nsH Auto Restart Protection ( AUTO ) ISO,AUTO H CurrentHsourceHatHAUTOHPinH kH 3H 5H 8H uAH VTH(H)H HighHthresholdHatHAUTOHPinH kH 2.7H 3H 3.3H VH VTH(L)H LowHthresholdHatHAUTOHPinH kH 0.9H 1H 1.1H VH Over Voltage Protection ( OVP ) VOVP H OverHvoltageHprotectionH kH 2.94H 3.0H 3.06H VH VOVPH H OverHvoltageHprotectionHhysteresisH kH 0.3H kH VH TOVP H OVPHFilteringHtime(2)H kH 200H kH nsH

H H H Jan.H2009.HVersionH1.0H H H H H H H H H MagnaChipHSemiconduc torHLtd . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH Electrical Characteristics (Continued) VCC =12V,HVPWMI=5V,HC GATE =C PWMO =1nF,HTa=25 ,HunlessHotherwiseHspecified℃ H Programmable Short current protection ( ISET ) VCM,ISET H InputHcommonkmodeHrangeHofHH comparatorH kH k0.3H kH 3H VH VOFF,ISET H InputHoffsetHvoltageHofHcomparatorH V ISET =1VH k20H kH 20H mVH TOFF H PropagationHtimeHforHshortHcurrentH detectionH(2)H VISET =1V,HH VFBN =0.9HtoH1.1VHstepH VPWMO HgoesHfromHhighHtoHlowH kH kH 250H nsH Note 1 :HStressHbeyondHtheHmaximumHratingsHlistedHaboveHmayHincurHpermanentHdamageHtoHtheHdevice.HOperatingHaboveHtheHrecommendedH conditionsHforHextendedHtimeHmayHstressHtheHdeviceHandHaffectHdeviceHreliability.HAlsoHtheHdeviceHmayHnotHoperateHnormallyHaboveHtheH recommendedHoperatingHconditions.HTheseHareHstressHratingsHonly.H Note 2 :HTheseHparameters,HalthoughHguaranteedHbyHdesign,HareHnotHtestedHinHmassHproductioin.H

H H H Jan.H2009.HVersionH1.0H H H H H H H H H MagnaChipHSemiconduc torHLtd . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH Pin Description HH H Functional Block Diagram 8V/7V Vcc Good 5VBG R Gm AMP REF 1V/3V Control Logic IAUTO LEB 2 12 3V/2.7V LPF 6 13 4 S R Q QB 9 CK Vcc Good REF 7 8

10 VCC

H PIN NO Description 1H VCCH PowerHSupplyHInputH 2H ISETH ProgrammableHShortHCurrentHProtectionHSetH 3H GATEH GateHdriveHOutputHforHBoostHConvertH 4H GNDH GNDH 5H CSH CurrentHsenseHofHtheHBoostHConvertH 6H AUTOH AutoHRestartHmodeHcontrolHforHprotectionH 7H RTH OscillatorHfrequencyHsetHofHtheHBoostHConverterH 8H SYNCH OscillatorsHtoHlockHtoHtheHhighestHfrequencyHH 9H CLIMH ProgrammableHBoostHInputHcurrentHlimitH

10 H REFH ReferenceHvoltageH

11 H PWMO H PWMHGateHDriverHOutputH

12 H OVPH OverHvoltageHprotectionH

13 H PWMIH PWMHGateHDriverHInputH

14 H COMPH ErrorHAmp.HCompensationH 15 H FBPH ErrorHAmp.HNonkinvertingHInput/PositiveHCurrentHSenseH 16 H FBNH ErrorHAmp.HInvertingHInput/NegativeHCurrentHSenseH

H H H Jan.H2009.HVersionH1.0H H H H H H H H H MagnaChipHSemiconduc torHLtd . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH H Physical Dimensions H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H NAME DATE REVISION ITEM No NAME DATE REVISION ITEM No mm UNIT 1/1 SHEET MBKD-D0786 DWG.NO ’09.11.19 Karl Lee DES.BY CH.BY 0REV.NO APR.BY TITLE NA SCALE

16 SOP

DATE NAME DIV ’D mm UNIT 1/1 SHEET MBKD-D0786 DWG.NO ’09.11.19 Karl Lee DES.BY CH.BY 0REV.NO APR.BY TITLE NA SCALE DATE NAME DIV ’D 1.40 1.27 1.14 e 0.25HBSC L2 15 °k0°θ1 1.04HREF L1 kk0.07HHR1 8°k0°θ kk0.07 R 1.27 k0.40HL 4.15Hk3.75HE1 6.30Hk5.70HE 10.10Hk9.70HD 0.23Hk0.10Hc1 0.30Hk0.10HC 0.48Hk0.28Hb1 0.51Hk0.31Hb kk1.25HA2 0.25Hk0.05HA1 1.80HkkA Max Nom Min Symbol 1.40 1.27 1.14 e 0.25HBSC L2 15 °k0°θ1 1.04HREF L1 kk0.07HHR1 8°k0°θ kk0.07 R 1.27 k0.40HL 4.15Hk3.75HE1 6.30Hk5.70HE 10.10Hk9.70HD 0.23Hk0.10Hc1 0.30Hk0.10HC 0.48Hk0.28Hb1 0.51Hk0.31Hb kk1.25HA2 0.25Hk0.05HA1 1.80HkkA Max Nom Min Symbol Reference JEDEC No. MS-012 (AC) IndexHArea (HD/2HxHE1/2H)

H H H Jan.H2009.HVersionH1.0H H H H H H H H H MagnaChipHSemiconduc torHLtd . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH Typical Operating Characteristics TheHfollowingHconditionsHapply:HVCCH=12V,HRRTH=H500HkΩ,HVPWMIH=H5VH H Quiescent Current vs. V CC VREF vs. TEMP . H H VREF Line Regulation Voltage H H Quiescent Current vs. TEMP . H H VREF Load Regulation Voltage H H H H H Under Voltage Lock Out H H

PreliminaryH–HSubjectHtoHchangeHwithoutHnotice H H H OCT.15H2009.HVersionH0.3H H H H H H H H H MagnaChipHSemiconductorHL td . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH Typical Operating Characteristics TheHfollowingHconditionsHapply:HVCCH=12V,HRRTH=H500HkΩ,HVPWMIH=H5VH H Over Voltage Protection H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H Frequency vs. RT H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H H

PreliminaryH–HSubjectHtoHchangeHwithoutHnotice H H H OCT.15H2009.HVersionH0.3H H H H H H H H H MagnaChipHSemiconductorHL td . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH H CurrentHModeHBoostHswitchingHregulatorH operationH H TheHMAPH3201HisHoperatedHinHcurrentHmodeHPWMHBoostHregulationH method,HwhichHshowsHfastHfrequencyHresponseHwhileHmaintainingH stableHoutputHvoltage.HH H ItHfeaturesHstableHresponseHbyHusingHtheHrecommendedHcombinationH ofHresistorH andHcapacitorHatHCOMPH andHGNDHpinH forHspecificH conditionHofHwideHinputHvoltage,HOutputHvoltageHandHvariableHLoadH condition.H H H H InternalH5VHLowHDropoutHRegulatorH H TheHMAP3201HhasHLDOHembeddedHinHitHtoHsupplyHInternalHanalog,H logicHcircuitHandHexternalHREFHPin.HThisHLDOHoperatesHatHaHvoltageH levelHwhereHVccHisHhigherHthanHtheHUVLOHvoltage.HItHprovidesH maximumH10mAHofHoutputHcurrentHthroughHregulatorHwhichHhasH2%H accuracyHofHperformance.HH ToHstabilizeHtheHvoltageHofHREFHPin,HitHisHrecommendedHtoHuseHlowH ESRHcapacitorHwhichHisHasHlowHasH1uFHandHconnectHitHbetweenHREFH andHGNDHPin,HandHinstallHitHasHcloseHasHtoHPin.HH H H H BoostHConverterHSwitchingHFrequencyH H TheHMAP3201HcanHsetHtheHswitchingHfrequencyHofHBoostHconverterH byH connectingH externalH resistorH betweenH RTH andH GNDHPin.H RecommendedHswitchingHfrequencyHisH100HKHzHtoH400HKHz.HH SeeHFigureH1HforHswitchingHfrequencyHadjustmentHresistorH(RT)H H H FigureH1HBoostHswitchingHfrequencyHvs.HRTH SYNCHRONIZATIONH H TheHMAP3201HcanHnotHonlyHoperateHconstantHfrequencyHinternally,H butHalsoHcontrolHswitchingHfrequencyHexternallyHbyHusingHexternalH masterHclockHsignalHthroughHSYNCHPin.HTheHclockHsignalHofHSYNCH PinHneedsHtoHbeHfasterHthanHinternalHOscillatorHclockHtoHensureH normalHswitchingHoperation.H H .HHH H H WhenHsynchronizingHmultipleHMAP3201HonHsingleHboard,HallHSYNCH PinHICsHofHeachHdeviceHshouldHbeHshortHtoHmakeHallHdevicesHinHsyncHH onHtheHOscillatorHclockHofHtheHfastestHdevice.HH InHthisHcase,HtheHnumberHofHsynchronizedHdevicesHdiffersHdependingH onHtheHoperationHfrequencyHofHOscillator.HH H IfHthisHfunctionHofHpeerHtoHpeerHsynchronizationHisHnotHused,HtheHSYNCH pinHmayHbeHrequiredHtoHbeHopenHorHshortHtoHGND.HItHisHrecommendedH toHconnectHSYNVHPinHtoHGNDHbecauseHthisHsolutionHprovidesHbetterH immunityHagainstHparasiticHnoiseHfromHlayout.H H H H FigureH2HInternalHOSCH&HSYNCHcircuitH H H H H H H H H H H H H H H H H H H FigureH3HSynchronizationHbyHexternalHclockH (FixedH100HKHzH/barb2rightH300HKHz)H H H H H H H H H H H H H H H H H H H FigureH4HPeerH–toHkpeerHsynchronizationH (FixedH100HKHz)H GATE1 GATE2 GATE3 CH2HBoostHDrain CH1HBoostHDrain GATE1 GATE2 GATE3 CH2HBoostHDrain CH1HBoostHDrain SYNC(4v/div) BoostHDrain(100V/div) Iboost(0.5A/div) VO(HACH1V/div) 300KHz/5%\ SYNC(4v/div) BoostHDrain(100V/div) Iboost(0.5A/div) VO(HACH1V/div) 300KHz/5%\

PreliminaryH–HSubjectHtoHchangeHwithoutHnotice H H H OCT.15H2009.HVersionH0.3H H H H H H H H H MagnaChipHSemiconductorHL td . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH H PROTECTIONH H TheHMAP3201HoffersHtheHfeaturesHsuchHasHUVLO,HBoostHcurrentHlimit,H OverHVoltageHProtectionHandHShortHCircuitHProtectionHofHLEDH(SCP).H OVPHandHSCPHareHoperatedHinHautoHrestartHprotectionHmode.HH 1.HUnderkVoltageHLockkOutH(UVLO)H WhenHVCCHvoltageHreachesHoverH8V,HUVLOHstartsHoperatingHwhichH enablesHInternalH5VHRegulator,HmakingHallHinternalHcontrolHcircuitsH includingHoscillator,HgateHdriverHandHprotectionHcircuitHreadyH forH operationHandHoutputHpinHofHGATE,HPWMOHandHCOMPHstartsH operatingHdependingHonHtheHinputHstatusHofHPWMI.H H IfHVCCHvoltageHdropsHbelowH7VHduringHnormalHoperation,HUVLOH startsHoperating,HshuttingHdownHInternalHControlHCircuitHandHstoppingH operationHofHGATE,HPWMOHandHCOMP.HItHisHfollowedHbyHdisablingHofH internalH5VHregulator,HandHshutHoffHofHallHICHoperation.H H 2.HPulseHbyHPulseHCurrentHLimitH ItHwillHoperateHPulseHbyHPulseHcurrentHlimitHasHvoltageHratioHbetweenH COMPHPinHVoltageHwhichHisHcontrolledHbyHGmHAmpHofHBoostH converterHandHCSHPinHvoltageHwhichHwillHbeHcausedHbyHexternalH BoostHFET.H H H 3.HMaximumHCurrentHLimitH MaximumHcurrentHthatHisHdrivenHintoHBoostHFETHthroughHCLIMHPinH voltageHcanHbeHsetHupHasHinHFigureH5HH H H H H FigureH5HCurrentHSenseHandHMaximumHcurrentHlimitH H H VC,HMAX:HMaximumHoutputHvoltageHofHGmHAmpH VOFF:HOffsetHvoltageHofHPWMHcomparatorH HHH CLIMCS OFF MAXC CS VV VVVV −−= 5 6 . 0, H H TheHequationHaboveHcanHbeHusedHtoHsetHupHMaximumHboostHcurrentH whenHVCLIMHisHVCS.H H H H H H H 4.HOverHVoltageHProtectionH(OVP)H TheHMAP3201HoffersHoverHvoltageHprotectionHinHorderHtoHprotectH MOSFETHofHboostHconverterHandHexternalHcomponentHconnectedHtoH OutputHpinHwhenHoutputHvoltageHisHinHabnormalHcondition.H H OVPHCircuitHmonitorsHwhetherHoutputHvoltageHisHstableHlevelHorHnotH IfHOVPHPinHvoltageHreachesHthresholdHconditionH(typicalH3V),HitHcanH shutHoffHtheHswitchingHofHGATEHandHPWMOHandHthenHoutputHvoltageH isHfallingHasHmuchHasHtheHleakageHcurrentHtime.HIfHtheHvoltageHofHOVPH PinH reachesH OVPH fallingH thresholdH (typicalH 2.7V),H ICH releasesH protectionHmode.HInHthisHtime,HprotectionHreleasingHcanHbeHdecidedH asHvalueHofHcapacitorHwithHtheHlongerHdischargeHbetweenHautoHrestartH timeHandHtheHtimeHofHleakageHcurrentHconnectedHtoHoutput.HHHHHHHH H TheH overH voltageH protectionH canH beH decidedH inH theH followingH equation.H H kHProtectionHvoltage:HH H H H 2*0 . 3 OO O O RR RV += H H H H H H kHProtectionHreleaseHvoltage:HHH H H 2*7 . 2 OO O O RR RV += H H H H FigureH6HHOverHvoltageHprotectionHcircuitH H TheHMAP3201HincludedHLPF(lowHpassHfilter)HofHtypicalH200nSHinHOVPH circuitHforHbetterHnoiseHimmunity,HItHmayHneedHaHhighHnoiseHmarginH whenHRo1HandHRo2HuseHhighHresistanceHvalueHinHorderHtoHminimizeH PowerHloss.HH InHthisHcase,HitHisHrecommendedHtoHaddHCapacitor.H H H 5.HProgrammableHShortHCurrentHProtectionHofHLEDH (SCP)H TheHMAP3201HoffersHprotectionHcircuitHtoHpreventHshortHcurrentHwhenH LEDHstringHisHshortedH H InHFigureH7HwhenHLEDHstringHisHshorted,HtheHvoltageHofHFBNHPinHcanH beHcalculatedHinHtheHfollowingHequationH H LEDLEDFBN RIV ∗= H H H H H H H

PreliminaryH–HSubjectHtoHchangeHwithoutHnotice H H H OCT.15H2009.HVersionH0.3H H H H H H H H H MagnaChipHSemiconductorHL td . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH H TheHprogrammableHSCPHvoltageHcanHbeHsetHupHinHreferenceHtoH5VH VREFHinHtheHequationHbelow.HH H 2*5 RR RVISET += H H Therefore,HtheHSCPHlevelHcanHbeHdecidedHbyHselectingHtheHresistorH valueHofHRLED,HR1HandHR2.H H H FigureH7HProgrammableHshortHcurrentHprotectionsH H SCPHCircuitHusesHveryHfastHcomparatorHinHorderHtoHturnHoffHMOSFETH whenHtheHabnormalHconditionHofHSCPHLevelHisHdetected.HBecauseH highHcurrentHcanHbeHdrivenHintoHchannelHofHMOSFETHwhenHLEDH stringHisHshorted.H ItHisHrecommendedHtoHuseHadditionalHISETHCsHcapacitorHinHorderHtoH preventHabnormalHSCPHwhichHisHcausedHbyHnoiseHH H H 6.HAutokRestartHProtectionH TheHMAP3201HoffersHAutoHRestartHprotectionHfunctionHwhichHisH recoveredHintoHnormalHoperationHmodeHwhenHprotectionHconditionHisH clearedH H H H FigureH8HAutoHRestartHProtectionHcircuitH H FigureH8HshowsHautoHrestartHprotectionHcircuitHthatHshutsHoffHtheH outputH ofH GATEH switchingH andH PWMOH ifH protectionH signalH isH assignedHtoHcontrolHlogicHcircuitHunderHOVPHorHSCPHcondition.H H H H H H H H TheHtimerHcircuitHoperatesHasHtheHconfigurationHofHbothHcomparatorHofH 1V/3VHInput,HIAUTO =5uAH(typical)HandHexternalHcapacitorHC AUTO HandH theHrestartHtimeHcanHbeHcalculatedHinHtheHfollowingHequation.H H H AUTO AUTO AUTO AR CeI CT *54*2 +== H H H H H H H H FigureH9HAutoHRestartHProtectionHtimingHdiagramH H OnHAutokRestartHProtectionHstatus,HitHmakesHrestartHsignalHofHinternalH singleHpulseHwhenHtheHvoltageHofHAUTOHPinHisHhighHthreshold.HInHthisH case,HitHisHrecoveredHtoHnormalHoperatingHmodeHifHSCPHorHOVPH conditionHisHcleared.HWhileHchargingHAUTOHpin,HitHrecoverHprotectionH whenHnextHrestartHsignalHoccursHevenHthoughHprotectionHconditionHisH cleared.H H DimmingHControlH H 1.HLEDHCurrentH TheHMAP3201HdecidesHLEDHCurrentHsettingHbyHtheHvalueHofHRLEDH resistanceHwhichHhasHbeenHsensingHtheHvoltageHofHpositiveHinputHFBPH PinHofHgmHAmp.HandHLEDHcurrentH(V FBP )H H H H FigureH10HLEDHCurrentHSettingH H

PreliminaryH–HSubjectHtoHchangeHwithoutHnotice H H H OCT.15H2009.HVersionH0.3H H H H H H H H H MagnaChipHSemiconductorHL td . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH H H InHfigureH10H H H LED LED LEDLEDFBN REF FBP RRR RI RIV RR RVV * ) 21( 2*5 +=∴ H H H H H H 2.HPWMHDimmingH TheHMAP3201HmakesHsameHphaseHPWMOHoutputHfromHlogicHPWMH signalHofHHPWMIHusingHintenralHLevelHshift.HPWMOHofHoperatingH voltageHlevelHisHbetweenHGNDHandHVCC.H H H InductorHSelectionH InductorHvalueHshouldHbeHdecidedHbeforeHsystemHdesign.H BecauseHtheHselectionHofHtheHinductorHaffectsHtheHoperatingH modeHofHCCMH(ContinuousHcurrentHmode)HorHDCMH(DiscontinuousH currentHmode).H InHCCMHoperation,HindutorHsizeHshouldHbeHbigger,HevenHthoughHtheH rippleHcurrentHandHpeakHcurrentHofHinductorHcanHbeHsmall.H InHDCMHoperation,HevenHrippleHcurrentHandHpeakHcurrentHofHinductorH shouldHbeHlargeHwhileHtheHinductorHsizeHcanHbeHsmallerHsoHthatHitHisH moreHeffectiveHinHBLUHofHTVHandHNotebookHapplication.H H TheHMAP3201HwasHdesignedHforHDCMHoperation.HH InHCCMHoperation,HsubkharmonicHoscillationHmayHoccurHifHdutyHcycleH exceedsHoverH50%.H BecauseH thereHisHnoHslopeHcompensationH functions.H H TheHfollowingHisHtheHequationHtoHcalculateHMax.ValueHofHInductorHinH DCMHoperation.H H ]***)1[( (min)(max) (max) sO TRDDL −= H H periodSwitchingMinimumT pedanceOutputMaximumR S O __)* Im__* (min (max) H H H H H H H H H H H H H ClosedHLoopHNetworkHSelectionH TheHMAP3201HcontrolsHinHpeakHcurrentHmode.HCurrentHmodeHeasilyH achievesH compensationH byH consistingH simpleH singleH PoleH fromH DoubleHPoleHthatHLCHfilerHmakesHatHVoltageHmodeH H H H FigureH11HCurrentHmodeHLoopHCompensationH H 1.HSelectHfCH(CrossoverHfrequency)H InHgeneral,HcrossoverHfrequencyHisHselectedHfromH1/3H~H1/6HrangeHofH theHswitchingHfrequency.HIfHfcHisHlarge,HthereHisHpossibilityHofHoscillationH toHoccur,HalthoughHtimeHresponseHgetsHbetter.H OnHtheHotherHhand,HifHfcHisHsmall,HtimeHresponseHwillHbeHbad,HwhileHitH hasHimprovedHstability,HwhichHmayHcauseHoverHshootHorHunderHshootH inHabnormalHcondition.H ItHshouldHbeHnotedHthatHfcHshouldHbeHsetHatHsmallerHlocationHthanHRHPH Zero.H L DRofRHP )1 ( *2 π −= HH(Boost)H H 2.HSelectHfPOH H OCPO Gff *= H ( DCGO = GainHofHplantH=H B A H FL Dm R A )1 ( * ) 5 . 0(2 3−−+ = H H SelectingHapproximatelyHmH=H1.4HH H )1 ( *DRB S −= H =SR SensingHResistorH HHHH H H H H H Vc ~ i L ~ Vc Vref Co Ro V out Rc Cc (Optional)

PreliminaryH–HSubjectHtoHchangeHwithoutHnotice H H H OCT.15H2009.HVersionH0.3H H H H H H H H H MagnaChipHSemiconductorHL td . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH H 3.HSelectHPoleHandHZeroH EA C PO GY Cf 2 π = H =EAG HGmkAmpHTransconductanceH O FPN V VRationAttenuatioY =−= H CC Z CRf 2 π= H H H ZeroHisHsetHatHtheHsameHlocationHofHoutputHpole.HInHsystemHdesign,HifH ESRHofHoutputHcapacitorHisHlarge,HPoleHshouldHbeHsetHatHsameH frequencyHinHorderHtoHcompensateHTheHZeroHofHESR.H H OPC OPP CRf **2 )( 1 π= H H H H H H H H H H

PreliminaryH–HSubjectHtoHchangeHwithoutHnotice H H H OCT.15H2009.HVersionH0.3H H H H H H H H H MagnaChipHSemiconductorHL td . MAP3201H–HHighHcurrentHswitchHmodeHPWMHLEDHDriverHHHH Worldwide Sales Support Locations H U.S.AH SunnyvaleHOfficeH 787HN.HMaryHAve.HSunnyvaleH CAH94085HU.S.AH TelH:H1k408k636k5200HH FaxH:H1k408k213k2450HH EkMailH:Hamericasales@magnachip.comH H ChicagoHOfficeH 2300HBarringtonHRoad,HSuiteH330H HoffmanHEstates,HILH60195HU.S.AH TelH:H1k847k882k0951H FaxH:1k847k882k0998H H U.KH KnyvettHHouseHTheHCauseway,HH StainesHMiddx,HTW18H3BA,U.K.H TelH:H+44H(0)H1784k898k8000H FaxH:H+44H(0)H1784k895k115H EkMailH:Heuropesales@magnachip.comH H JapanH TokyoHOfficeH ShinbashiH2kchomeHMTHbldgH 4FH2k5k5HShinbashi,HMinatokkuHH Tokyo,H105k0004HJapanH TelH:H81k3k3595k0632H FaxH:H81k3k3595k0671H EkMailH:Hjapansales@magnachip.comH H OsakaHOfficeHH 3F,HShinkOsakaHMTk2HBldgH 3k5k36HMiyaharaHYodogawakKuHH Osaka,H532k0003HJapanH TelH:H81k6k6394k8224H FaxH:H81k6k6394k8282H EkMailH:Hosakasales@magnachip.comH TaiwanHR.O.CH 2F,HNo.61,HChowizeHStreet,HNeiHHuH Taipei,114HTaiwanHR.O.CHH TelH:H886k2k2657k7898H FaxH:H886k2k2657k8751H EkMailH:Htaiwansales@magnachip.comH H ChinaH HongHKongHOfficeH OfficeH03,H42/F,HOfficeHTowerHConventionHPlazaH 1HHarbourHRoad,HWanchai,HHongHKongH TelH:H852k2828k9700H FaxH:H852k2802k8183H EkMailH:Hchinasales@magnachip.comH H ShenzhenHOfficeH RoomH1803,H18/FH InternationalHChamberHofHCommerceHTowerHH FuhuaH3Road,HFutianHDistrictH ShenZhen,HChinaHH TelH:H86k755k8831k5561H FaxH:H86k755k8831k5565H H ShanghaiHOfficeH SteH1902,H1HHuaihaiHRd.H(C)H20021H Shanghai,HChinaH TelH:H86k21k6373k5181H FaxH:H86k21k6373k6640H H KoreaHHH 891,HDaechikDong,HKangnamkGuH Seoul,H135k738HKoreaH TelH:H82k2k6903k3451H FaxH:H82k2k6903k3668H~9HH EmailH:Hkoreasales@magnachip.comH H H DISCLAIMER:HH HHHH TheHproductsHareHnotHdesignedHforHuseHinHhostileHenvironments,Hincluding,HwithoutHlimitation,Haircraft,HnuclearHpowerHgeneration,HmedicalH appliances,HandHdevicesHorHsystemsHinHwhichHmalfunctionHofHanyHproductHcanHreasonablyHbeHexpectedHtoHresultHinHaHpersonalHinjury.HSeller’sH customersHusingHorHsellingHSeller’sHproductsHforHuseHinHsuchHapplicationsHdoHsoHatHtheirHownHriskHandHagreeHtoHfullyHdefendHandHindemnifyHSeller.H H