MAMXSS0011 MACOM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- Low Conversion Loss
- 1 dB Compression: +21 dBm
- LO Drive Level: +11 to +23 dBm
- DC - 100 MHz IF Bandwidth
- Lead-Free SOIC-8 Package
- 100% Matte Tin Plating over Copper
- Halogen-Free “Green” Mold Compound
- 260°C Reflow Compatible
- RoHS* Compliant Version of MD54-0004
Description
M/A-COM’s MAMXSS0011 is a passive mixer that achieves the performance of a double balanced diode mixer in a lead-free surface mount plastic SOIC-8 package. The MAMXSS0011 is ideally suited for use where high level RF signals and very wide dynamic range are required. Typical applications include frequency up/down conversion, modulation, demodulation in systems such as cellular receivers and transmitters and 900 MHz ISM band applications. The MAMXSS0011 uses FETs as mixing elements to achieve very wide dynamic range in a low cost plastic package. The mixer operates with LO drive levels of +11 dBm to +23 dBm. DC bias is not required. M/A-COM’s MAMXSS0011 is fabricated using a mature 1-micron GaAs process. The process features full IC passivation for increased performance and reliability. Part Number Package MAMXSS0011 Bulk Packaging MAMXSS0011TR 1000 piece reel MAMXSS0011SMB Designer’s Kit
Ordering Information
Note: Reference Application Note M513 for reel size information. Functional Diagram Pin Configuration Pin No. Function Pin No. Function
1 Ground 5 Ground
2 RF Port 6 LO Port
3 Ground 7 IF Port
4 Ground 8 Ground
External matching network on LO Port: R = 470 ohms, L = 18 nH, C = 4.7 pF 8 7 6 5 1 2 3 4 R C L * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Electrical Specifications: Test Conditions: RF = 900 MHz (-10 dBm), LO = 840 MHz (13 dBm), IF = 60 MHz, TA = +25°C Parameter Test Conditions Units Min Typ Max Conversion Loss — dB — 7.5 9.5 Isolation LO to RF LO to IF RF to IF dB dB dB VSWR LO Port RF Port IF Port Ratio Ratio Ratio 2.5:1 2.0:1 2.0:1 Input 1 dB Compression RF Freq. = 900 MHz, LO = +13 dBm dBm — +21 — Two-Tone IM Ratio1 Two tones at –10 dBm each, Tone spacing 100 kHz, IF = 60 MHz dBc 45 60 — 1. IMR vs RF drive level can be calculated by the formula: IMR = 45 - (1.5 x P IN ) 4x 8.9 -1.1 40.1 39.9 70.1 61.6 69.9 63.9 73.4 64.4 3x 2.2 -7.7 34.2 34.1 59.8 63.8 67.3 64.5 2x 2.9 -7.1 23.7 23.8 72.8 64.7 72.9 63.3 71.9 61.9 1x -2.2 -12.2 61.4 63.3 71.3 61.8 71.1 61.9 0x X X 4.7 4.8 65.1 61.3 71.5 61.9 72.1 62.3 0x 1x 2x 3x 4x Harmonic of RF Spurious Table Harmonic of LO The spurious table shows the spurious signals resulting from the mixing of the RF and LO input signals, assuming down conversion. Mixing products are indicated by the number of dB below the conversion loss. The lower frequency mixing term is shown for two different RF input levels. The top number is for an RF input power of -5 dBm, the lower number is for -15 dBm. |mF RF - nFLO |, RF = -5 dBm |mFRF - nFLO |, RF = -15 dBm RF Frequency = 900 MHz LO Frequency = 840 MHz Parameter Absolute Maximum RF Input Power4 +22 dBm LO Drive Power4 +23 dBm Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C Absolute Maximum Ratings2,3 2. Exceeding any one or combinati on of these limits may cause permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these survivability limits. 4. Total combined power for RF and LO ports should not exceed +23 dBm. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macom.com for additional data sheets and product information. RoHS Compliant Typical Performance Curves Conversion Loss Input P1dB Isolation RF, LO and IF VSWR 800 850 900 950 1000 RF Frequency (MHz) 800 850 900 950 1000 LO to RF LO to IF RF to IF RF Frequency (MHz) 800 850 900 950 1000 RF Frequency (MHz) 800 840 880 920 960 1000 0 40 80 120 160 200 RF LO IF RF Frequency (MHz) IF Frequency (MHz) Lead-Free SOIC-8† † Reference Application Note M538 for lead-free solder reflow recommendations.