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RF01009, Rev. B (5/7/13) ©2013 Microsemi Corporation Page 1 of 5 MLCE6.5 – MLCE170A Available

1500 Watt Low Capacitance

Transient Voltage Suppressor Screening in reference to MIL-PRF-19500 available

DESCRIPTION

This high-reliability plastic encapsulated Transient Voltage Suppressor (TVS) diode series for thru-hole mounting includes a rectifier diode element in series and in the opposite direction. This allows it to present a very low (< 100 pF) capacitance to the system it is protecting (see Figure 2). The low capacitance of these devices makes them particularly useful for protecting lines carrying high frequency signals. They are also useful in protecting from the secondary effects of lightning in airborne avionics per IEC61000-4-5, RTCA/DO-160G, and ARINC 429. If bidirectional transient capability is required, two of these low capacitance TVS devices may be used in parallel and opposite directions (anti-parallel) for complete ac protection. Case 1 Package Also available in: SMCG & SMCJ package (tabbed surface mounts) SMCG(J)LCE6.5 – SMCG(J)LCE170 Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

  • High reliability with fabrication and assembly lot traceability.
  • All devices are 100% surge tested.
  • Unidirectional construction. For bidirectional applications, use two in anti-parallel (see Figure 4).
  • Suppresses transients up to 1500 watts @10/1000μs (see Figure 1).
  • Working standoff voltage (VWM) range 6.5 V to 170 V.
  • 5% and 10% tolerance options available
  • Clamps transients in less than 100 pico seconds.*
  • 3σ lot norm screening performed on standby current ID.
  • Moisture classification is level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
  • Screening options available in reference to MIL-PRF-19500. See Part Nomenclature below for all available options, and to our Hi-Rel Non-Hermetic Products brochure on our web site for more details.
  • RoHS compliant versions available. *measurement limitation APPLICATIONS / BENEFITS
  • Protection from switching transients and induced RFI.
  • Low capacitance for data line protection to 1 MHz.
  • Protection for fast data rate lines in aircraft up to: RTCA/DO-160G – level 5 Waveform 4 and Level 2 Waveform 5A in (also see MicroNote 130) ARINC 429, Part 1, paragraph 2.4.1.1 with bit rates of 100 kb/s.
  • Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4.
  • Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance: Class 1: MLCE6.5A to MLCE170A Class 2: MLCE6.5A to MLCE150A Class 3: MLCE6.5A to MLCE70A Class 4: MLCE6.5A to MLCE36A
  • Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance: Class 1: MLCE6.5A to MLCE90A Class 2: MLCE6.5A to MLCE45A Class 3: MLCE6.5A to MLCE22A Class 4: MLCE6.5A to MLCE11A
  • Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance: Class 2: MLCE6.5A to MLCE20A Class 3: MLCE6.5A to MLCE10A MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com

RF01009, Rev. B (5/7/13) ©2013 Microsemi Corporation Page 2 of 5 MLCE6.5 – MLCE170A MAXIMUM RATINGS @ 25 ºC unless otherwise stated Parameters/Test Conditions Symbol Value Unit Junction and Storage Temperature TJ and TSTG -65 to +150 ºC Thermal Resistance Junction-to-Lead (1) RӨJL 22 ºC/W Peak Pulse Power dissipation @ 25 ºC (at 10/1000 µs, see Figures 1, 2, and 3) (2) PPP 1500 W Rated Average Power Dissipation TL = +40 ºC TA = +25 ºC(1) PM(AV) 5.0 1.52 W Solder Temperature @ 10 s TSP 260 oC Notes: 1. At 3/8 inch (10 mm) from body, or 82 ºC/W junction to ambient when mounted on FR4 PC board with 4 mm2 copper pads (1oz), track width 1 mm, length 25mm. 2. With a impulse repetition rate of 0.01% or less. TVS devices are not typically used for dc power dissipation and are instead operated at ≤ VWM except for transients that briefly drive the device into avalanche breakdown (VBR to VC region) of the TVS element. Also see Application Schematics for further protection details in rated peak power for unidirectional and bidirectional configurations respectively. MECHANICAL and PACKAGING

  • CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
  • TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable to MIL-STD-750, method 2026.
  • MARKING: Part number.
  • POLARITY: Cathode indicated by band.
  • TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
  • WEIGHT: Approximately 1.5 grams.
  • See Package Dimensions on last page. PART NOMENCLATURE M LC E 6.5 A e3 Reliability Level M MA MX MXL *(see High Reliability Non-Hermetic Product Portfolio) Low Capacitance Rated RoHS Compliance e3 = RoHS Compliant Blank = non-RoHS Compliant Tolerance Level A = +/- 5% Blank = +/- 10% Reverse Stand-Off Voltage (see Electrical Characteristics table) Encapsulated Plastic Package

RF01009, Rev. B (5/7/13) ©2013 Microsemi Corporation Page 3 of 5 MLCE6.5 – MLCE170A SYMBOLS & DEFINITIONS Symbol Definition I(BR) Breakdown Current: The current used for measuring breakdown voltage V(BR). ID Standby Current: The current at the rated standoff voltage VWM. IF Forward Current: The forward current dc value, no alternating component. IPP Peak Impulse Current: The peak current during the impulse. PPP Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP. VC Clamping Voltage: The maximum clamping voltage at specified IPP (peak pulse current) at the specified pulse conditions. V(BR) Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. VWM Working Standoff Voltage: The maximum peak voltage that can be applied over the operating temperature range. ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated MICROSEMI Part Number Working Stand-Off Voltage VWM (Note 1) Volts Breakdown Voltage V(BR) @ I(BR) Volts Maximum Stanby Current ID @ VWM µA Maximum Clamping Voltage VC @ IPP Volts Maximum Peak Pulse Current IPP Amps Maximum Capacitance C @ 0 Volts, f = 1 MHz pF Working Inverse Blocking Voltage VWIB Volts Inverse Blocking Leakage Current IIB µA Peak Inverse Blocking Voltage VPIB Volts MIN MAX mA MLCE6.5A MLCE7.0A 6.5 7.0 7.22 7.78 7.98 8.60 1000 500 11.2 12.0 100 100 100 100 100 100 MLCE7.5A MLCE8.0A 7.5 8.0 8.33 8.89 10.2 9.83 250 100 12.9 13.6 100 100 100 100 100 100 MLCE8.5A MLCE9.0A 8.5 9.0 9.44 10.0 10.4 11.1 14.4 15.4 100 100 100 100 100 MLCE10A MLCE11A 11.1 12.2 12.3 13.5 17.0 18.2 100 100 100 100 MLCE12A MLCE13A 13.3 14.4 14.7 15.9 19.9 21.5 100 100 100 100 MLCE14A MLCE15A 15.6 16.7 17.2 18.5 23.2 24.4 100 100 100 100 MLCE16A MLCE17A 17.8 18.9 19.7 20.9 26.0 27.6 100 100 100 100 MLCE18A MLCE20A 20.0 22.2 22.1 24.5 29.2 32.4 100 100 100 100 MLCE22A MLCE24A 24.4 26.7 26.9 29.5 35.5 38.9 100 100 100 100 MLCE26A MLCE28A 28.9 31.1 31.9 34.4 42.1 45.5 100 100 100 100 MLCE30A MLCE33A 33.3 36.7 36.8 40.6 48.4 53.3 28.1 100 100 100 100 MLCE36A MLCE40A 40.0 44.4 44.2 49.1 58.1 64.5 25.8 23.3 100 100 100 100 MLCE43A MLCE45A 47.8 50.0 52.8 55.3 69.4 72.7 21.6 20.6 100 100 150 150 200 200 MLCE48A MLCE51A 53.3 56.7 58.9 62.7 77.4 82.4 19.4 18.2 100 100 150 150 200 200 MLCE54A MLCE58A 60.0 64.4 66.3 71.2 87.1 93.6 17.2 16.0 100 100 150 150 200 200 MLCE60A MLCE64A 66.7 71.1 73.7 78.6 96.8 103 15.5 14.6 150 150 200 200 MLCE70A MLCE75A 77.8 83.3 86.0 92.1 113 121 13.3 12.4 150 150 200 200 MLCE80A MLCE90A 88.7 100 98.0 111 129 146 11.6 10.3 150 300 200 200 MLCE100A MLCE110A 100 110 111 122 123 135 162 178 9.3 8.4 300 300 200 400 MLCE120A MLCE130A 120 130 133 144 147 159 193 209 7.8 7.2 300 300 400 400 MLCE150A MLCE160A 150 160 167 178 185 197 243 259 6.2 5.8 300 300 400 400 MLCE170A 170 189 209 1 5 275 5.4 90 300 10 400 NOTE 1: TVS are normally selected according to the reverse “standoff voltage” (VWM ) which should be equal to or greater than the dc or continuous peak operating voltage level.

RF01009, Rev. B (5/7/13) ©2013 Microsemi Corporation Page 4 of 5 MLCE6.5 – MLCE170A GRAPHS Pulse Time (tw) in µs FIGURE 1 Peak Pulse Power vs Pulse Time (tw) in µs PPP - Peak Pulse Power - kW

RF01009, Rev. B (5/7/13) ©2013 Microsemi Corporation Page 5 of 5 MLCE6.5 – MLCE170A PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for information only. 3. The major diameter is essentially constant along its length. 4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. APPLICATION SCHEMATICS The TVS low capacitance device configuration is shown in figure 2. As a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in figure 3. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage VC. The Microsemi recommended rectifier part number is the “ELCR80” for the application in figure 3. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the reverse of each rectifier diode) is also provided. The unidirectional and bidirectional configurations in figure 3 and 4 will both result in twice the capacitance of figure 2. FIGURE 2 FIGURE 3 FIGURE 4 TVS with internal Low Optional Unidirectional Optional Bidirectional Capacitance Diode configuration (TVS and configuration (two TVS separate rectifier diode devices in anti-parallel) in parallel) Dimensions Symbol Inches Millimeters Min Max Min Max BD 0.190 0.205 4.826 5.207 BL 0.360 0.375 9.146 9.527 LD 0.038 0.042 0.958 1.074 LL 1.10 1.625 27.9 41.28