MAGX-000912-500L0X MA-COM | Alldatasheet
Document overview
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Technical content
Features
GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260 °C Reflow Compatible +50 V Typical Operation MTTF = 600 years (TJ < 200 °C)
Applications
Civilian Air Traffic Control (ATC), L-Band Secondary Radar for IFF and Mode-S Avionics. Military radar for IFF and Data Links.
Description
The MAGX -000912-500L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Part Number Description MAGX-000912-500L00 Flanged MAGX-000912-500L0S Flangeless MAGX-A00912-500L00 960 - 1215 MHz Evaluation Board Ordering Information1 Typical RF Performance under standard operating conditions, POUT = 500 W (Peak) Freq (MHz) PIN (W) Gain (dB) ID (A) Eff. (%) RL (dB) Droop (dB) +1dB OD (W) VSWR-S (3:1) VSWR-T (5:1) MAGX-000912-500L00 MAGX-000912-500L0S 1. When ordering the evaluation board, please indicate on sales order notes if it will be used for: A. Standard Flange devices B. Earless Flange devices
GaN on SiC HEMT Pulsed Power Transistor
500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
Rev. V6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000912-500L0x Parameter Test Conditions Symbol Min. Typ. Max. Units DC Characteristics Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - 1.0 30 mA Gate Threshold Voltage VDS = 5 V, ID = 75 mA VGS (TH) -5 -3.1 -2 V Forward Transconductance VDS = 5 V, ID = 17.5 mA GM 12.5 19.2 - S Dynamic Characteristics Input Capacitance Not applicable - Input matched CISS N/A N/A N/A pF Output Capacitance COSS - 55 - pF VDS = 50 V, VGS = -8 V, Freq. = 1 MHz Reverse Transfer Capacitance CRSS - 5.5 - pF Electrical Characteristics: TA = 25°C Electrical Specifications: Freq. = 960 - 1215 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests Peak Input Power PIN - 5.2 7.9 W VDD = 50 V, IDQ = 400 mA, Pulse Width = 128 μs, Duty Cycle = 10%, POUT = 500 W Peak (50 W avg.) Power Gain GP 18 19.8 - dB Drain Efficiency ηD 51 60 - % Pulse Droop Droop - 0.3 0.6 dB Load Mismatch Stability VSWR-S - 3:1 - - Load Mismatch Tolerance VSWR-T - 5:1 - -
GaN on SiC HEMT Pulsed Power Transistor Rev. V6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000912-500L0x Absolute Maximum Ratings2,3,4 Parameter Limit Drain Voltage (VDD) +65 V Gate Voltage (VGG) -8 to -2 V Drain Current (IDD) 27.3 A Input Power5 (PIN) PIN (nominal) + 3 dB Operating Junction Temperature6 250 ºC Peak Pulsed Power Dissipation at 85 ºC 875 W Operating Temperature Range -40 to +95 ºC Storage Temperature Range -65 to +150 ºC ESD Maximum - Charged Device Model (CDM) 1300 V ESD Maximum - Human Body Model (HBM) 4000 V 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 4. For saturated performance it is recommended that the sum of ( 3 * VDD + | VGG | ) < 175 V. 5. Input Power Limit is +3 dB over nominal drive required to achieve POUT = 500 W. 6. Operating junction temperature is measured with infrared (IR) microscope. Junction temperature directly affects a device's MTTF and should be kept as low as possible to maximize lifetime. MTTF = 5.3 x 106 hours (TJ < 200 °C) MTTF = 6.8 x 104 hours (TJ < 250 °C) Thermal Characteristics Parameter Test Conditions Symbol Typical Units Thermal Resistance TC = 70 ºC, VDD = 50 V, IDQ = 400 mA, POUT = 500 W, Pulse Width = 128 µs, Duty Cycle = 10% ΘJC 0.2 °C/W
GaN on SiC HEMT Pulsed Power Transistor Rev. V6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000912-500L0x Test Fixture Assembly Correct Device Sequencing Test Fixture Impedances INPUT NETWORK Zif OUTPUT NETWORK Zof Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS Freq. (MHz) ZIF (Ω) ZOF (Ω) 960 1.1 - j1.1 1.8 + j0.8 1025 1.4 - j0.7 2.2 + j0.8 1090 1.7 - j0.5 2.4 + j0.6 1150 2.1 - j0.4 2.3 + j0.3 1215 2.4 - j0.7 1.9 + j0.2 Contact MACOM for additional circuit information.
GaN on SiC HEMT Pulsed Power Transistor Rev. V6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000912-500L0x RF Power Transfer Curve (Output Power Vs. Input Power) RF Power Transfer Curve (Drain Efficiency Vs. Output Power)
GaN on SiC HEMT Pulsed Power Transistor Rev. V6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000912-500L0x Outline Drawing MAGX-000912-500L00† † Reference Application Note AN3025 for mounting/soldering recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is Ni/Au.
GaN on SiC HEMT Pulsed Power Transistor Rev. V6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000912-500L0x Outline Drawing MAGX-000912-500L0S† † Reference Application Note AN3025 for mounting/soldering recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is Ni/Au.
GaN on SiC HEMT Pulsed Power Transistor Rev. V6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000912-500L0x M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A -COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale.