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GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 600 years (Channel Temperature < 200°C) Application Civilian and Military Pulsed Radar Product Description The MAGX-002735-040L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3500 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002735-040L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Typical RF Performance Freq (MHz) Pin Peak) Pout Peak) Gain (dB) Id-Pk (A) Eff (%) 2700 4 44 10.4 1.7 53 3100 4 46 10.6 1.7 54 3500 4 42 10.2 1.5 55 2900 4 44 10.5 1.6 56 2800 4 45 10.5 1.7 53 3000 4 43 10.3 1.7 51 3400 4 43 10.3 1.5 55 3300 4 47 10.7 1.7 57 3200 4 47 10.7 1.7 54 Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows: Vdd=50V, Idq=250mA (pulsed), F=2.7—3.5 GHz, Pulse=300us, Duty=10%. Ordering Information MAGX-002735-040L00 40W GaN Power Transistor MAGX-002735-SB0PPR Evaluation Fixture
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle MAGX-002735-040L00 Production V1
26 March 12
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Absolute Maximum Ratings Table (1, 2, 3) Supply Voltage (Vdd) +65V Supply Voltage (Vgg) -8 to 0V Supply Current (Id1) 3 A Input Power (Pin) +36 dBm Absolute Max. Junction/Channel Temp 200 ºC Continuous Power Dissipation (Pdiss) at 85 ºC 27 W Pulsed Power Dissipation (Pavg) at 85 ºC 55 W Thermal Resistance, (Tchannel = 200 ºC) Pulsed 500uS, 10% Duty cycle 2.0 ºC/W Operating Temp -40 to +95C Storage Temp -65 to +150C Mounting Temperature See solder reflow profile ESD Min. - Machine Model (MM) 50 V ESD Min. - Human Body Model (HBM) >250 V MSL Level MSL1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175 MTTF (TJ<200°C) 600 years Parameter Test Conditions Symbol Min Typ Max Units DC CHARACTERISTICS Drain-Source Leakage Current V GS = -8V, VDS = 175V IDS - - 2.5 mA Gate Threshold Voltage V DS = 5V, ID = 6mA VGS (th) -5 -3 -2 V Forward Transconductance V DS = 5V, ID = 1.5mA GM 1.0 - - S DYNAMIC CHARACTERISTICS Input Capacitance V DS = 0v, VGS = -8V, F = 1MHz CISS - 13.2 - pF Output Capacitance V DS = 50V, VGS = -8V, F = 1MHz COSS - 5.6 - pF Reverse Transfer Capacitance V DS = 50V, VGS = -8V, F = 1MHz CRSS - 0.5 - pF
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle MAGX-002735-040L00 Production V1
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Test Fixture Impedance Parameter Test Conditions Symbol Min Typ Max Units Output Power Pin = 4W Peak POUT 36 3.6 4.4 - W Peak W Ave Power Gain Pin = 4W Peak GP 9.5 10.5 - dB Drain Efficiency Pin = 4W Peak ηD 48 55 - % Load Mismatch Stability Pin = 4W Peak VSWR-S 5:1 - - - Load Mismatch Tolerance Pin = 4W Peak VSWR-T 10:1 - - - F (MHz) ZIF (Ω) ZOF (Ω) 2700 9.2+ j2.1 7.5 + j8.9 2800 9.0 + j1.5 7.9 + j8.9 2900 8.7 + j0.8 8.2 + j8.5 3000 8.3 + j0.1 8.3 + j8.3 3100 7.8 - j0.7 8.2 + j8.4 3200 7.0 - j1.5 9.1 + j8.3 3300 6.0 - j2.0 9.4 + j7.2 3400 4.9 - j2.1 9.4 + j7.2 3500 4.2 - j2.7 9.0 + j6.8
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle MAGX-002735-040L00 Production V1
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed.
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle MAGX-002735-040L00 Production V1
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed.
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle MAGX-002735-040L00 Production V1
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Test Fixture Assembly
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle MAGX-002735-040L00 Production V1
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simu- lated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- able. Commitment to produce in volume is not guaranteed. Outline Drawings Outline Drawings TURNING THE DEVICE ON 1. Set VGS to the pinch-off (VP), typically -5V 2. Turn on VDS to nominal voltage (50V) 3. Increase VGS until the IDS current is reached 4. Apply RF power to desired level TURNING THE DEVICE OFF 1. Turn the RF power off 2. Decrease V GS down to VP 3. Decrease VDS down to 0V 4. Turn off VGS CORRECT DEVICE SEQUENCING