MAGX-001090-600L00_15 MA-COM | Alldatasheet

Document overview

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Technical content

Features

 GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration  Broadband Class AB Operation  RoHS* Compliant and 260°C Reflow Compatible  +50 V Typical Operation  MTTF = 600 years (TJ < 200°C)

Applications

 Civilian Air Traffic Control (ATC), L-Band secondary radar for IFF and Mode-S avionics.  Military radar for IFF and Data Links.

Description

The MAGX -001090-600L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. MAGX-001090-600L00 MAGX-001090-600L0S Part Number Description MAGX-001090-600L00 Flanged MAGX-001090-600L0S Flangeless MAGX-A11090-600L00 1.03 - 1.09 GHz Evaluation Board

Ordering Information

GaN on SiC HEMT Pulsed Power Transistor

600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty

Rev. V5 2 2 2 MAGX-001090-600L00 MAGX-001090-600L0S M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Typical RF Performance under standard operating conditions, POUT = 600 W (Peak) Electrical Characteristics: TA = 25°C Electrical Specifications: Freq. = 1030 - 1090 MHz, TA = 25°C Freq (MHz) PIN (W) Gain (dB) ID (A) Eff. (%) RL (dB) Droop (dB) +1dB OD (W) VSWR-S (3:1) VSWR-T (5:1) Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: Standard Pulse Conditions: VDD = 50 V, IDQ = 600 mA; Pulse = 32 µs / 2% Input Power POUT = 600 W Peak (12 W avg.) PIN - 4.3 6.7 Wpk Power Gain POUT = 600 W Peak (12 W avg.) GP 19.5 21.4 - dB Drain Efficiency POUT = 600 W Peak (12 W avg.) ηD 55 63 - % Pulse Droop POUT = 600 W Peak (12 W avg.) Droop - 0.2 0.3 dB Load Mismatch Stability POUT = 600 W Peak (12 W avg.) VSWR-S - 3:1 - - Load Mismatch Tolerance POUT = 600 W Peak (12 W avg.) VSWR-T - 5:1 - - Mode-S ELM Pulse Width Conditions1: VDD = 50 V, IDQ = 400 mA; 48 pulses of 32 µs on and 18 µs off, repeat every 24 ms; Overall Duty Factor = 6.4% Input Power POUT = 550 W Peak (35.2 W avg.) PIN - 4.6 - Wpk Power Gain POUT = 550 W Peak (35.2 W avg.) GP - 20.7 - dB Drain Efficiency POUT = 550 W Peak (35.2 W avg.) ηD - 61 - % 1. For Mode-S ELM pulse conditions, RF power is measured at the middle of the 25th pulse in the burst (t ~ 1.216 ms) Parameter Test Conditions Symbol Min. Typ. Max. Units DC Characteristics: Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - 1.0 30 mA Gate Threshold Voltage VDS = 5 V, ID = 75 mA VGS (TH) -5 -3.1 -2 V Forward Transconductance VDS = 5 V, ID = 17.5 mA GM 12.5 19.2 - S Dynamic Characteristics: Input Capacitance Not applicable - Input matched CISS N/A N/A N/A pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 55 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 5.5 - pF

GaN on SiC HEMT Pulsed Power Transistor Rev. V5 3 3 3 MAGX-001090-600L00 MAGX-001090-600L0S M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Absolute Maximum Ratings2,3,4,5 2. Operation of this device above any one of these parameters may cause permanent damage. 3. Input Power Limit is +3 dB over nominal drive required to achieve POUT = 600 W. 4. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 5. For saturated performance it recommended that the sum of (3*VDD + abs(VGG)) <175 V. Parameter Limit Supply Voltage (VDD) +65 V Supply Voltage (VGS) -8 to -2 V Supply Current (IDMAX) 80 A Input Power (PIN) PIN (nominal) + 3 dB Absolute Max. Junction/Channel Temp 200ºC Pulsed Power Dissipation at 85 ºC 3.5 kW Thermal Resistance, (TJ= 70 ºC) VDD = 50 V, IDQ = 600 mA, Pout = 600 W, 32 µs Pulse / 2% Duty 0.05 ºC/W Operating Temp -40 to +95ºC Storage Temp -65 to +150ºC Mounting Temperature See solder reflow profile ESD Min. - Charged Device Model (CDM) 1300 V ESD Min. - Human Body Model (HBM) 4000 V Correct Device Sequencing Test Fixture Impedances INPUT NETWORK Zif OUTPUT NETWORK Zof F (MHz) ZIF (Ω) ZOF (Ω) 1030 1.1 - j1.5 1.5 + j0.5 1060 1.1 - j1.4 1.5 + j0.6 1090 1.1 - j1.3 1.5 + j0.6 Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS

GaN on SiC HEMT Pulsed Power Transistor Rev. V5 4 4 4 MAGX-001090-600L00 MAGX-001090-600L0S M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Test Fixture Circuit Dimensions Test Fixture Assembly Contact factory for gerber file or additional circuit information.

GaN on SiC HEMT Pulsed Power Transistor Rev. V5 5 5 5 MAGX-001090-600L00 MAGX-001090-600L0S M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport RF Power Transfer Curve (Output Power Vs. Input Power) RF Power Transfer Curve (Drain Efficiency Vs. Output Power)

GaN on SiC HEMT Pulsed Power Transistor Rev. V5 6 6 6 MAGX-001090-600L00 MAGX-001090-600L0S M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Typical RF Data with Mode-S ELM ‘pulse’ conditions: 48 pulses of 32 µs on and 18 µs off, repeat every 24ms; Overall Duty Factor = 6.4% VDD = 50 V; IDQ = 400 mA

GaN on SiC HEMT Pulsed Power Transistor Rev. V5 7 7 7 MAGX-001090-600L00 MAGX-001090-600L0S M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Outline Drawing MAGX-001090-600L00

GaN on SiC HEMT Pulsed Power Transistor Rev. V5 8 8 8 MAGX-001090-600L00 MAGX-001090-600L0S M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Outline Drawing MAGX-001090-600L0S