MAGX-000245-025000_15 MA-COM | Alldatasheet
Document overview
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Technical content
Features
GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Cu/Mo/Cu Package RoHS* Compliant +28V Typical Operation MTTF = 600 years (TJ < 200°C) Primary Applications RF Lighting RF Plasma Generation RF Heating RF Drying Material Processing Power Industrial Equipment ISM Broadcast MILCOM Datalinks Air Traffic Control Radar - Commercial Weather Radar - Commercial Military Radar - Military
Description
The MAGX -000245-025000 is a gold metalized unmatched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for CW applications centered at 2.45GHz for application in ISM/Broadcast/Plasma applications. This product differentiates itself from other GaN power transistors in that it runs well in CW. The matching network is compact and small. The frequency of operation covers DC - 2.5 GHz which captures commercial as well as military applications. This product is designed as a high power driver amplifier or final stage depending on the application. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth and ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX -000245-025000 is constructed using a thermally enhanced Cu/Mo/ Cu flanged ceramic package which provides excellent thermal performance.
GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power Rev. V1 MAGX-000245-025000 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Electrical Specifications1: Freq. = 2450 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: VDD = +28 V, IDQ = 100 mA, CW Operation Input Power Pout= 25 W Pin - 1.6 2.4 W Power Gain Pout= 25 W GP 10.2 12 - dB Drain Efficiency Pout= 25 W ηD 57 62 - % Load Mismatch Stability Pout= 25 W VSWR-S - 5:1 - - Load Mismatch Tolerance Pout= 25 W VSWR-T - 10:1 - - 1. Electrical Specifications measured in MACOM RF evaluation board. Parameter Test Conditions Symbol Min. Typ. Max. Units DC Characteristics Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - - 3.0 mA Gate Threshold Voltage VDS = 5 V, ID = 6 mA VGS (TH) -5 -3 -2 V Forward Transconductance VDS = 5 V, ID = 1500 mA GM 1.1 - - S Dynamic Characteristics Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 13.2 - pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 5.6 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.5 - pF Electrical Characteristics: TA = 25°C Correct Device Sequencing Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (+28V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS.
GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power Rev. V1 MAGX-000245-025000 3 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Absolute Maximum Ratings2,3,4 Parameter Limit Supply Voltage (VDD) +32 V Supply Voltage (VGg) -8 to 0 V Supply Current (IDMAX) for CW Operation at VDD = +32 V 3 A Input Power (PIN) for CW Operation at VDD = +28 V PIN (nominal) + 3 dB Absolute Max. Junction/Channel Temperature 200ºC Power Dissipation at 85 ºC for CW Operation at VDD = +28 V 13 W MTTF (TJ<200°C) 600 years Thermal Resistance, (TJ= 200 ºC) VDD = 28 V, IDQ = 100 mA, CW Operation 9.0 ºC/W Operating Temperature -40 to +95ºC Storage Temperature -65 to +150ºC Mounting Temperature See solder reflow profile ESD Min. - Charged Device Model (CDM) 200 V ESD Min. - Human Body Model (HBM) 550 V 2. Operation of this device above any one of these parameters may cause permanent damage. 3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 4. For saturated performance it is recommended that the sum of (3*VDD + abs(VGG)) <175 V.
GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power Rev. V1 MAGX-000245-025000 4 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Test Fixture Assembly (2450 MHz, CW Operation) Contact factory for Gerber file or additional circuit information. Test Fixture Impedances INPUT NETWORK Zif OUTPUT NETWORK Zof F (MHz) ZIF (Ω) ZOF (Ω) 2450 1.6 - j4.5 5.6 + j3.9 Parts List Reference Designator Part Description Manufacturer Part Number C1 0.1 µF, 0402, X7R, 10%, 16 V, Murata GRM155R71C104K C2 10 nF, 0402, X7R, 10%, 50 V, Murata GRM155R71H103K C16 0.1 µF, 0805, X7R, 10%, 100 V, TDK C2012X7R2A104K125AA C15 5000 pF, 100B, 5%, 250 V, ATC - C3, C4 12 pF, 0402, ± 1%, 200 V, ATC ATC600L120FT C12, C13 12 pF, 0603, ± 2%, 250 V, ATC ATC600S120GT C10 2.4 pF, 0603, ± 0.05 pF, 250 V, ATC ATC600S2R4BT C7 2.4 pF, 0402, ± 1 %, 200 V, ATC ATC600L2R4FT C11 1.3 pF, 0603, ± 0.1 pF, 250 V, ATC ATC600S1R3BT C9 1.6 pF, 0603, ± 0.1 pF, 250 V, ATC ATC600S1R6BT C6 1.5 pF, 0402, ± 0.1 pF, 200 V, ATC ATC600L1R5FT C17 100 µF, 160 V, Electrolytic Capacitor - C5, C8, C14 Not Populated - L1 10 nH, 0402, 2%, Coilcraft 0402HP-10NXGLW R1 200 Ω, 0402, 5%, Panasonic ERJ-2GEJ201X R2 3K Ω, 0402, 5%, Panasonic ERJ-2GEJY302X R3 11 Ω, 0402, 1%, Panasonic ERJ-2RKF11R0X R4 2.2 Ω, 1206, 1%, Panasonic CR1206-J/-2R2ELF J1, J2 SMA Connector 2052-5636-02
GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power Rev. V1 MAGX-000245-025000 5 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Typical Performance Curves Application Section
2450 MHz, VDD = 28 V, CW Operation, TA = 25°C
Gain, Drain Efficiency, and PAE vs. Output Power over IDQ IDQ= 50mA IDQ= 100mA IDQ= 200mA IDQ= 300mA
GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power Rev. V1 MAGX-000245-025000 6 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Outline Drawing MAGX-000245-025000