MAGX-000035-05000P

MAGX-000035-05000P MA-COM | Alldatasheet

Document overview

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Technical content

Features

 GaN on SiC D-Mode Transistor Technology  Unmatched, Ideal for Pulsed Applications  50 V Typical Bias, Class AB  Common-Source Configuration  Thermally-Enhanced 3 x 6 mm 14-Lead DFN  MTTF = 600 years (TJ < 200°C)  Halogen-Free “Green” Mold Compound  RoHS* Compliant and 260°C Reflow Compatible  MSL-1

Description

The MAGX -000035-05000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic -packaging technology. Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an ideal replacement for costly flanged or metal-backed module components. Pin No. Function Pin No. Function

1 No Connection 8 No Connection

2 No Connection 9 No Connection

3 VGG/RFIN 10 VDD/RFOUT

4 VGG/RFIN 11 VDD/RFOUT

5 VGG/RFIN 12 VDD/RFOUT

6 No Connection 13 No Connection

7 No Connection 14 No Connection

15 Paddle4

MAGX-000035-05000P Bulk Packaging MAGX-000035-0500TP 250 Piece Reel MAGX-000035-PB2PPR Sample Board * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Functional Schematic Pin Configuration3 NC NC NC NC NC NC NC NC 1 2 3 4 5 6 7 14 13 12 11 10 9 8 G GG DD D Ordering Information1,2 1. Reference Application Note M513 for reel size information. 2. When ordering sample evaluation boards, choose a standard frequency range indicated on page 4 or specify a desired custom range. Custom requests may increase lead times. 3. MACOM recommends connecting unused package pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF and DC ground.

GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 MAGX-000035-05000P 2 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Parameter Test Conditions Symbol Min. Typ. Max. Units DC CHARACTERISTICS Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - - 3.0 mA Gate Threshold Voltage VDS = 5 V, ID = 6 mA VGS (th) -5 -3 -2 V Forward Transconductance VDS = 5 V, ID = 1500 mA GM 1.1 - - S DYNAMIC CHARACTERISTICS Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 13.1 - pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 5.2 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.5 - pF Electrical Characteristics: TA = 25°C Electrical Specifications: Freq. = 1.6 GHz, TA = 25°C, VDD = +50 V, Z0 = 50 Ω Parameter Test Conditions Symbol Min. Typ. Max. Units RF FUNCTIONAL TESTS CW Output Power (P2.5 dB) VDD = 28 V, IDQ = 100 mA POUT - 12 - W Pulsed Output Power (P2.5 dB) 1 ms and 10% Duty Cycle VDD = 50 V, IDQ = 100 mA POUT 42 50 - W Pulsed Power Gain (P2.5 dB) VDD = 50 V, IDQ = 100 mA GP 16 18 - dB Pulsed Drain Efficiency (P2.5 dB) VDD = 50 V, IDQ = 100 mA ηD 55 66 - % Load Mismatch Stability (P2.5 dB) VDD = 50 V, IDQ = 100 mA VSWR-S - 5:1 - - Load Mismatch Tolerance (P2.5 dB) VDD = 50 V, IDQ = 100 mA VSWR-T - 10:1 - - Typical Performance5: VDD = 50 V, IDQ = 100 mA, TA = 25°C Parameter 30 MHz 1 GHz 2.5 GHz 3.5 GHz Units Gain 24 22 17 14 dB Saturated Power (PSAT) 65 65 50 45 W Power Gain at PSAT 22 21 15 11 dB PAE @ PSAT 73 65 58 53 % 5. Typical RF performance measured in M/A-COM Technology Solutions RF evaluation boards. See recommended tuning solutions on page 4.

GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 MAGX-000035-05000P 3 3 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Parameter Absolute Max. Input Power POUT - GP + 2.5 dBm Drain Supply Voltage, VDD +65 V Gate Supply Voltage, VGG -8 V to 0 V Supply Current, IDD 2500 mA Power Dissipation, CW @ 85ºC 13 W Power Dissipation (PAVG), Pulsed @ 85°C 43 W Junction Temperature11 200°C Operating Temperature -40°C to +95°C Storage Temperature -65°C to +150°C Absolute Maximum Ratings 6,7,8,9,10 6. Exceeding any one or combination of these limits may cause permanent damage to this device. 7. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. 8. For saturated performance it is recommended that the sum of (3 * VDD + abs (VGG)) < 175 V. 9. CW operation at VDD voltages above 28 V is not recommended. 10. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Junction temperature directly affects device MTTF and should be kept as low as possible to maximize lifetime. 11. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN)) Typical CW thermal resistance (ӨJC) = 9.63°C/W a) For TC = 79°C, TJ = 200°C @ 28 V, 840 mA, POUT = 12 W, PIN = 0.92 W Typical transient thermal resistances: b) 300 µs pulse, 10% duty cycle, ӨJC = 1.6°C/W For TC = 79°C, TJ = 117°C @ 50 V, 1090 mA, POUT = 30.2 W, PIN = 1.42 W c) 1 ms pulse, 10% duty cycle, ӨJC = 2.0°C/W For TC = 79°C, TJ = 129°C @ 50 V, 1110 mA, POUT = 30.7 W, PIN = 1.5 W d) 1 ms pulse, 20% duty cycle, ӨJC = 2.81°C/W For TC = 79°C, TJ = 153°C @ 50 V, 1120 mA, POUT = 30.9 W, PIN = 1.59 W

GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 MAGX-000035-05000P 4 4 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Part Frequency = 1.6 GHz Frequency = 0.9 - 1.2 GHz C1 0402 27 pF, ±5%, 200 V, ATC 0402, 8.2 pF, ±0.1 pF, 200 V, ATC C2 0603, 6.8 pF, ±0.1 pF, 250 V, ATC 0402, 15 pF, ±5%, 200 V, ATC C3 0505, 100 pF, ±10%, 200 V, ATC 0505, 100 pF, ±10%, 200 V, ATC C4 0805, 1000 pF, 100 V, 5%, AVX 0805, 1000 pF, 100 V, 5%, AVX C5 N/A N/A C6 0505, 2.2 pF, ±5%, 250 V, ATC 0505, 2.7 pF, ±0.1 pF, 250 V, ATC C7 0505, 36 pF, ±5%, 250 V, ATC 0603, 56 pF, ±5%, 250 V, ATC C8 0505, 36 pF, ±5%, 250 V, ATC 0505, 100 pF, ±10%, 200 V, ATC C9 0805, 1000 pF, 100 V, 5%, AVX 0805, 1000 pF, 100 V, 5%, AVX C10 1210, 1 µF, 100 V, 20%, ATC 1210, 1 µF, 100 V, 20%, ATC C11 N/A 100 µF, 160 V R1 33 Ω, 0805, 5% 9.1 Ω, 0805, 5% R2 1.0 Ω, 0603, 5% 0.33 Ω, 0805, 5% R3 1.0 Ω, 0603, 5% 0.33 Ω, 0805, 5% L1 N/A 0402HP, 3.3 nH L2 N/A 0402HP, 1.0 nH L3 N/A 0402HP, 4.7 nH L4 N/A 0402HP, 3.6 nH Parts List (N/A = not applicable for this tuning solution) Parts measured on evaluation board (8 -mils thick RO4003C). Electrical and thermal ground is provided using copper -filled via hole array (not pictured), and evaluation board is mounted to a metal plate. Matching is provided using lumped elements as shown at left. Recommended tuning solutions for 2 frequency ranges are detailed in the parts list below. Evaluation Board Details and Recommended Tuning Solutions Turning the device ON 1. Set VG to the pinch-off (VP), typically -5 V. 2. Turn on VD to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VG down to VP. 3. Decrease VD down to 0 V. 4. Turn off VG. Bias Sequencing RFIN RFOUT VD VG

GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 MAGX-000035-05000P 5 5 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Devices and Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 1B devices. Lead-Free 3x6 mm 14-Lead DFN† † Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is Ni/Pd/Au.

GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 MAGX-000035-05000P 6 6 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Applications Section S-Parameter Data: TA = 25°C, VDD = +50 V, IDQ = 100 mA 0.03 2.03 4.03 6 Frequency (GHz) SPAR GRAPH -20 -10

6 GHz

11.98 dB

2.048 GHz

22.45 dB DB(MSG()) MAGX00035_05000P_50 DB(GMax()) MAGX00035_05000P_50 DB(|S(2,1)|) MAGX00035_05000P_50 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 MAGX00035_05000P_50 Swp Max 6GHz Swp Min 0.03GHz

3.498 GHz

r 0.017463 x 0.129484

2.744 GHz

r 0.0209221 x 0.0770001

1.307 GHz

r 0.0313997 x -0.0593526

3.499 GHz

r 0.0533052 x -0.0525211

1.308 GHz

r 0.225072 x -0.409382

2.704 GHz

r 0.0768784 x -0.145712 S(1,1) MAGX00035_05000P_50 S(2,2) MAGX00035_05000P_50

GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 MAGX-000035-05000P 7 7 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Thermal Performance: Freq. = 1.6 GHz, TC = 85°C, VDD = +50 V, IDQ = 100 mA, Z0 = 50 Ω Junction temperature measured using High-Speed Transient (HST) temperature detection microscopy. Applications Section Power (Output & Dissipated) vs. Transient Junction Temperature, Pulse Duration and Duty Cycle 100 µs, 10% 100 µs, 20% 300 µs, 10% 300 µs, 20% 500 µs, 10% 500 µs, 20% 1000 µs, 10% 1000 µs, 20% 8000 µs, 9.2% Pulse Width, Duty Cycle Junction Temp. (°C) 100 120 140 160 180 200 Power Dissipation

1.6 GHz Power Output

Max .Transient Junction Temp. Pulse Width (µs), Duty Cycle (%)

GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 MAGX-000035-05000P 8 8 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Applications Section

1.6 GHz, 1 ms Pulse, 10% Duty Cycle, VDD= +50 V, TA = 25°C, Z0 = 50 Ω

0.0 0.5 1.0 1.5 Input Power (W) 0.0 0.5 1.0 1.5 Input Power (W) PAE vs. Input Power Gain vs. Input Power Output Power vs. Input Power Typical Performance Curves (reference 1.6 GHz parts list): 0.0 0.5 1.0 1.5 Input Power (W)

GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 MAGX-000035-05000P 9 9 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport Applications Section 0.9 - 1.2 GHz, 500 µs Pulse, 10% Duty Cycle, VDD = +50 V, TA = 25°C, Z0 = 50 Ω PAE vs. Input Power Gain vs. Input Power Output Power vs. Input Power Typical Performance Curves (reference 0.9 - 1.2 GHz parts list): 20 22 24 26 28 30

0.90 GHz

0.95 GHz

1.0 GHz

1.1 GHz

1.2 GHz

Input Power (dBm) 20 22 24 26 28 30 Input Power (dBm) 20 22 24 26 28 30 Input Power (dBm)