MAGX-000035-010000 MA-COM | Alldatasheet
Document overview
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Technical content
Features
GaN Depletion-Mode HEMT Microwave Transistor Common-Source configuration No internal matching Broadband Class AB operation RoHS* Compliant +50 V Typical Operation MTTF = 600 years
Description
The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-01000X is constructed with either a flanged or flangeless ceramic package which provides excellent t hermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions compared with older semiconductor technologies.
Applications
General purpose for pulsed or CW applications: Commercial Wireless Infrastructure (WCDMA, LTE, WIMAX) Civilian and Military Radar Military and Commercial Communications Public Radio Industrial, Scientific and Medical SATCOM Instrumentation Avionics
Ordering Information
MAGX-000035-01000S (Flangeless) MAGX-000035-010000 (Flanged) * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 MAGX-000035-010000 MAGX-000035-01000S 2 2 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Parameter Limit Supply Voltage (VDD) +65 V Supply Voltage (VGG) -8 to 0 V Supply Current (IDD) 800 mA Input Power (PIN) 25 dBm Junction/Channel Temp 200ºC Continuous Power Dissipation (PDISS) at 85 ºC 18 W Pulsed Power Dissipation (PAVG) at 85 ºC 43 W Thermal Resistance, (TJ = 200 ºC), CW 9.2 ºC/W Thermal Resistance, (TJ = 200 ºC), Pulsed 500 μs, 10% Duty cycle 3.4 ºC/W Operating Temp -40 to +95ºC Storage Temp -65 to +150ºC ESD Min. - Charged Device Model (CDM) 250 V ESD Min. - Human Body Model (HBM) 250 V MTTF (TJ < 200 °C) 600 years Parameter Test Conditions Symbol Min. Typ. Max. Units Input Capacitance V DS = 0 V, VGS = -8 V, F = 1 MHz CISS - 4.4 - pF Output Capacitance V DS = 50 V, VGS = -8 V, F = 1 MHz COSS - 1.9 - pF Reverse Transfer Capacitance V DS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.2 - pF 1. Exceeding any one or combination of these limits may cause permanent damage to this device 2. Junction temperature directly affects device MTTF. Junction temperature should be kept as low as possible to maximize lifeti me. 3. For saturated performance it is recommended that the sum of (3*Vdd + abs(Vgg)) <175 V. Absolute Maximum Ratings1, 2, 3 DC Characteristics Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current V GS = -8 V, VDS = 175 V IDS - - 10.8 mA Gate Threshold Voltage V DS = 5 V, ID = 2 mA VGS (TH) -5 -3 -2 V Forward Transconductance V DS = 5 V, ID = 500 mA GM 5.5 - - S DC Characteristics
GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 MAGX-000035-010000 MAGX-000035-01000S 3 3 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Electrical Specifications: TA = 25 ºC Test Fixture Impedance Freq. (MHz) ZIN-OPT (Ω) ZOUT-OPT (Ω) 1300 3.6 + j6.9 38.3 + j20.5 Parameter Test Conditions Symbol Min. Typ. Max. Units RF FUNCTIONAL TESTS CW Output Power (P2dB)
1.3 GHz
V DD = 50 V, IDQ = 25 mA, PIN = 0.3 W P OUT 10 11 - W Power Gain (P2dB) 1.3 GHz V DD = 50 V, IDQ = 25 mA GP 18 19 dB Drain Efficiency @ 1.3 GHz V DD = 50 V, IDQ = 25 mA, POUT = 10 W ηD 45 % Load Mismatch Stability V DD = 50 V, IDQ = 25 mA, PIN = 0.3 W VSWR-S 5:1 - - - Load Mismatch Tolerance V DD = 50 V, IDQ = 25 mA, PIN = 0.3 W VSWR-T 10:1 - - -
GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 MAGX-000035-010000 MAGX-000035-01000S 4 4 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Freq. (GHz) POUT (dBm) POUT (W) Gain (dB) ID (A) Eff. (%) VD (V) IDQ (mA) 1.2—1.4 GHz Typical CW Performance 1.2—1.4 GHz Test Fixture Freq. (GHz) P2dB (dBm) POUT (W) Gain (dB) ID (A) Eff. (%) VD (V) IDQ (mA)
3.3 GHz Typical CW Performance
GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 MAGX-000035-010000 MAGX-000035-01000S 5 5 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 VD = 50 V IDQ = 25 mA Pulse = 100 μs Duty = 15% 1.2—1.4 GHz Performance With Pulsed Signal
GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 MAGX-000035-010000 MAGX-000035-01000S 6 6 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 1.2—1.4 GHz Matching Circuit For Rogers RT6010.2LM
GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 MAGX-000035-010000 MAGX-000035-01000S 7 7 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Outline Drawings MAGX-000035-010000 MAGX-000035-01000S
GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 MAGX-000035-010000 MAGX-000035-01000S 8 8 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 TURNING THE DEVICE ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. TURNING THE DEVICE OFF 1. Turn the RF power off. 2. Decrease V GS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. CORRECT DEVICE SEQUENCING