MAGX-000025-150000-V1 MA-COM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Features
GaN on SiC Transistor Technology Broadband Unmatched Transistor Common-Source Configuration +50 V Typical Operation Class AB Operation RoHS* Compliant and 260°C Reflow Compatible MTTF = 600 years (TJ < 200 °C)
Applications
General purpose for pulsed or CW applications
Description
The MAGX -000025-150000 is a gold -metalized Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Part Number Description MAGX-000025-150000 Flanged MAGX-000025-SB2PPR 1200-1400 MHz Evaluation Board MAGX-000025-SB1PPR 2500 MHz Evaluation Board
Ordering Information
Pin No. Function
1 Vgg/RF Input
2 Vdd/RF Output
3 Vgg/RF Input
4 Vdd/RF Output
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz
Rev. V1 MAGX-000025-150000 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Electrical Specifications1: Freq. = 1200-1400 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: VDD = 50 V, IDQ = 600 mA, 300 µs Pulse, 20% Duty Output Power PIN= 2.5 W POUT 150 170 - W Power Gain PIN= 2.5 W GP 17.5 18 - dB Drain Efficiency PIN= 2.5 W ηD 52 58 - % Droop PIN= 2.5 W Droop - 0.2 0.3 dB Load Mismatch Stability PIN= 2.5 W VSWR-S - 5:1 - - Load Mismatch Tolerance PIN= 2.5 W VSWR-T - 10:1 - - Typical RF Characteristics2: Freq. = 2500 MHz, TA = 25°C 1. Electrical Specifications measured in MACOM RF evaluation board. 2. Typical RF Characteristics measured in MACOM RF evaluation board. 3. All DC Characteristics are per side. Parameter Test Conditions Symbol Min. Typ. Max. Units DC Characteristics (Per Side): Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - 2 5.28 mA Gate Threshold Voltage VDS = 5 V, ID = 75 mA VGS (TH) -5 -3.1 -2 V Forward Transconductance VDS = 5 V, ID = 17.5 mA GM 2 2.8 - S Dynamic Characteristics (Per Side): Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 26.4 - pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 11.2 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 1 - pF Electrical Characteristics3: TA = 25°C Parameter Test Conditions Symbol Typ. Units Max. Min. RF Functional Tests: VDD = 50 V, IDQ = 600 mA, 300 µs Pulse, 20% Duty Output Power PIN= 7 W POUT 125 W - - Power Gain PIN= 7 W GP 12.5 dB - - Drain Efficiency PIN= 7 W ηD 48 % - - Droop PIN= 7 W Droop 0.1 dB - - Load Mismatch Stability PIN= 7 W VSWR-S 5:1 - - - Load Mismatch Tolerance PIN= 7 W VSWR-T 10:1 - - - RF Functional Tests: VDD = 28 V, IDQ = 600 mA, CW Input Power POUT= 35 W PIN 2 W - - Power Gain POUT= 35 W GP 12 dB - - Drain Efficiency POUT= 35 W ηD 45 % - - Load Mismatch Stability POUT= 35 W VSWR-S 5:1 - - - Load Mismatch Tolerance POUT= 35 W VSWR-T 10:1 - - -
GaN on SiC HEMT Power Transistor Rev. V1 MAGX-000025-150000 3 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Absolute Maximum Ratings4,5,6,7,8 Parameter Limit Supply Voltage (VDD) +65 V Supply Voltage (VGS) -8 to -2 V Supply Current (IDMAX) for CW operation at VDD = 28 V 5.5 A Supply Current (IDMAX) for pulsed operation at VDD = 50 V 8.3 A Input Power (PIN) for CW operation at VDD = 28 V PIN (typical) + 1.5 dB Input Power (PIN) for pulsed operation at VDD = 50 V 40 dBm Absolute Max. Junction/Channel Temperature 200ºC Power Dissipation at 85 ºC for CW operation at VDD = 28 V 79 W Power Dissipation at 85 ºC for pulsed operation at VDD = 50 V 177 W Thermal Resistance, (TJ= 200 ºC) VDD = 28 V, IDQ = 600 mA, Pout = 35 W, CW 1.45 ºC/W Thermal Resistance, (TJ= 200 ºC) VDD = 50 V, IDQ = 600 mA, Pin = 7 W, pulsed 0.65 ºC/W Operating Temperature -40 to +95ºC Storage Temperature -65 to +150ºC Mounting Temperature See solder reflow profile ESD Min. - Charged Device Model (CDM) 300 V ESD Min. - Human Body Model (HBM) 700 V 4. Operation of this device above any one of these parameters may cause permanent damage. 5. For CW operation, Input Power limit is +1.5 dB over nominal drive required to achieve POUT = 35 W. 6. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 7. For saturated performance it is recommended that the sum of (3*VDD + abs(VGG)) <175 V. 8. Pulsed operation is specified for a 300 µs Pulse, 20% Duty.
GaN on SiC HEMT Power Transistor Rev. V1 MAGX-000025-150000 4 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Correct Device Sequencing Test Fixture Impedances (Per Side) F (MHz) ZIF(1,2) (Ω) ZOF(1,2) (Ω) 1200 0.8 + j0.5 9.4 + j4.1 1300 0.9 + j0.2 7.2 + j3.0 1400 0.5 - j0.2 5.4 + j3.4 2500 1.2 - j3.4 3.1 + j1.4 Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage: 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS
GaN on SiC HEMT Power Transistor Rev. V1 MAGX-000025-150000 5 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Test Fixture Assembly (1200-1400 MHz) Contact factory for Gerber file or additional circuit information. Test Fixture Assembly (2500 MHz)
GaN on SiC HEMT Power Transistor Rev. V1 MAGX-000025-150000 6 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Typical Performance Curves
2500 MHz, 300 µs Pulse, 20% Duty, VDD = 50 V, Idq = 600 mA
Output Power Vs. Input Power Drain Efficiency Vs. Output Power Application Section 1200-1400 MHz, 300 µs Pulse, 20% Duty, VDD = 50 V, Idq = 600 mA Output Power Vs. Input Power Drain Efficiency Vs. Output Power
2500 MHz, CW, VDD = 28 V, Idq = 600 mA
Output Power Vs. Input Power Drain Efficiency Vs. Output Power 0 0.5 1 1.5 2 2.5 3 3.5 4 POUT (W) PIN (W) 0 5 10 15 20 25 30 35 40 45 Eff (%) POUT (W) 100 125 150 175 200 225 POUT (W) PIN (W) 1200 1300 1400 0 25 50 75 100 125 150 175 200 Eff (%) POUT (W) 1200 1300 1400 100 120 140 0 1 2 3 4 5 6 7 8 POUT (W) PIN (W) 0 25 50 75 100 125 150 Eff (%) POUT (W)
GaN on SiC HEMT Power Transistor Rev. V1 MAGX-000025-150000 7 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Outline Drawing MAGX-000025-150000 MACOM GX0025-150 LOT NO. / SER NO.