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Agilent MGA-725M4 Low Noise Amplifier with Bypass Switch In Miniature Leadless Package Data Sheet

Description

Agilent Technologies’s MGA-725M4 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for an adaptive CDMA receiver LNA and adaptive CDMA transmit driver amplifier. The MGA-725M4 features a typical noise figure of 1.4 dB and 14.4 dB associated gain from a single stage, feedback FET amplifier. The output is internally matched to 50Ω. The input is optimally internally matched for lowest noise figure into 50Ω. The input may be additionally externally matched for low VSWR through the addition of a single series inductor. When set into the bypass mode, both input and output are internally matched to 50Ω.

Features

  • Operating frequency: 0.1 GHz ~ 6.0 GHz
  • Noise figure: 1.2 dB at 800 MHz 1.4 dB at 1900 MHz
  • Gain: 17.5 dB at 800 MHz 15.7 dB at 1900 MHz
  • Bypass switch on chip Loss = typ 1.6 dB (I d < 5 µA) IIP3 = +10 dBm
  • Adjustable Input IP3: +2 to +14.7 dBm
  • M iniature package: 1.4 mm x 1.2 mm 2.7 V to 5.0 V operation

Applications

  • CDMA (IS-95, J-STD-008) Receiver LNA
  • T ransmit Driver Amp
  • TDMA (IS-136) handsets MiniPak 1.4 mm x 1.2 mm Package Pin Connections and Package Marking The MGA-725M4 offers an integrated solution of LNA with adjustable IIP3. The IIP3 can be fixed to a desired current level for the receiver’s linearity require- ments. The LNA has a bypass switch function, which sets the current to zero and provides low insertion loss. The bypass mode also boosts dynamic range when high level signal is being received. For the CDMA driver amplifier applications, the MGA-725M4 provides suitable gain and linear- ity to meet the ACPR requirement when the handset transmits the highest power. When transmitting lower power, the MGA-725M4 can be bypassed, saving the drawing current. The MGA-725M4 is a GaAs MMIC, processed on Agilent’s cost effective PHEMT (Pseudomorphic High Electron Mobility Transistor). It is housed in the MiniPak 1412 package. It is part of the Agilent Technologies CDMAdvantage RF chipset. Simplified Schematic GND GND Output & Vd Control GainFET Input Vref Ax GROUND INPUT GROUND OUTPUT Ax 1.+ 01.11.13, 9:01 AMPage 1 "EPCF1BHF.BLFS+11$

Symbol Parameter Units Absolute Operation Maximum Maximum Vd Maximum Input to Output Voltage V 5.5 4.2 Vgs Maximum Input to Ground DC Voltage V +.3 +.1 -5.5 -4.2 Id Supply Current mA 70 60 Pd Power Dissipation[1,2] mW 300 250 Pin CW RF Input Power dBm +20 +13 Tj Junction Temperature °C 170 150 TSTG Storage Temperature °C -65 to +150 -40 to +85 Thermal Resistance:[2] θjc = 180°C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. T case = 25°C. Electrical Specifications, Tc = +25°C, Zo = 50Ω, Id = 20 mA, Vd = 3V, unless noted. Symbol Parameter and Test Condition Units Min. Typ. Max. σ Nfo[2] Minimum Noise Figure f = 1.0 GHz dB 1.2 As measured in Figure 2 Test Circuit f = 1.5 GHz 1.2 (Computed from s-parameter and noise f = 2.0 GHz 1.3 parameter performance as measured in a f = 2.5 GHz 1.3 50Ω impedance fixture) f = 4.0 GHz 1.4 f = 6.0 GHz 1.6 Gain[2] Associated Gain at Nfo f = 1.0 GHz dB 17.6 As measured in Figure 2 Test Circuit f = 1.5 GHz 16.6 (Computed from s-parameter and noise f = 2.0 GHz 15.7 parameter performance as measured in a f = 2.5 GHz 14.8 50Ω impedance fixture) f = 4.0 GHz 12.8 f = 6.0 GHz 10.6 P1dB[1] Output Power at 1 dB Gain Compression I d = 0 mA dBm 15.2 As measured in Figure 1 Test Circuit I d = 5 mA 3.4 Frequency = 2.04 GHz I d = 10 mA 9.14 Id = 20 mA 13.13 0.53 Id = 40 mA 15.25 Id = 60 mA 16.16 IIP3[1] Input Third Order Intercept Point I d = 0 mA dBm 35 As measured in Figure 1 Test Circuit I d = 5 mA 3.1 Frequency = 2.04 GHz I d = 10 mA 6.6 Id = 20 mA 9.9 0.35 Id = 40 mA 13.0 Id = 60 mA 14.7 RLin[1] Input Return Loss as measured in Fig. 1 f = 2.0 GHz dB -8.2 0.41 RLout[1] Output Return Loss as measured in Fig. 1 f = 2.0 GHz dB -15 1.3 ISOL[1] Isolation |S12|2 As measured in Fig. 2 f = 2.0 GHz dB -23.4 0.4 Notes: 1. Standard deviation and typical data as measured in the test circuit of Figure 1. Data based on 500 part sample size from 3 wafer lots. 2. Typical data computed from S-parameter and noise parameter data measured in a 50Ω system. 3. Vd = total device voltage = Vdg 4. Bypass mode voltages shown are used in production test. For source resistor biasing, Bypass mode is set by opening the source resistor. 1.+ 01.11.13, 9:01 AMPage 2 "EPCF1BHF.BLFS+11$

MGA-725M4 Typical Scattering Parameters: Bypass Mode Tc = 25°C, Vd = 3.0 V, Id = 0 mA, Zo = 50Ω (test circuit of Figure 2) Freq S 11 S11 S21 S21 S12 S12 S22 S22 S11 S21 S12 S22 1.+ 01.11.13, 9:01 AMPage 5 "EPCF1BHF.BLFS+11$

MGA-725M4 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vd = 3.0V, Id = 5 mA, ZO = 50Ω (test circuit of Figure 2) Freq S 11 S11 S21 S21 S12 S12 S22 S22 S21 RLin RLout Gmax Isolation Freq NF min GAMMA OPT Rn G a (GHz) (dB) Mag Ang (dB) 1.+ 01.11.13, 9:01 AMPage 6 "EPCF1BHF.BLFS+11$

MGA-725M4 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vd = 3.0V, Id = 10 mA, ZO = 50Ω (test circuit of Figure 2) Freq S 11 S11 S21 S21 S12 S12 S22 S22 S21 RLin RLout Gmax Isolation Freq NF min GAMMA OPT Rn G a (GHz) (dB) Mag Ang (dB) 1.+ 01.11.13, 9:01 AMPage 7 "EPCF1BHF.BLFS+11$

MGA-725M4 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vd = 3.0 V, Id = 20 mA, ZO = 50Ω (test circuit of Figure 2) Freq S 11 S11 S21 S21 S12 S12 S22 S22 S21 RLin RLout Gmax Isolation Freq NF min GAMMA OPT Rn G a (GHz) (dB) Mag Ang (dB) 1.+ 01.11.13, 9:01 AMPage 8 "EPCF1BHF.BLFS+11$

MGA-725M4 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vd = 3.0 V, Id = 40 mA, ZO = 50Ω (test circuit of Figure 2) Freq S 11 S11 S21 S21 S12 S12 S22 S22 S21 RLin RLout Gmax Isolation Freq NF min GAMMA OPT Rn G a (GHz) (dB) Mag Ang (dB) 1.+ 01.11.13, 9:02 AMPage 9 "EPCF1BHF.BLFS+11$

MGA-725M4 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vd = 3.0 V, Id = 60 mA, ZO = 50Ω (test circuit of Figure 2) Freq S 11 S11 S21 S21 S12 S12 S22 S22 S21 RLin RLout Gmax Isolation Freq NF min GAMMA OPT Rn G a (GHz) (dB) Mag Ang (dB) 1.+ 01.11.13, 9:02 AMPage 10 "EPCF1BHF.BLFS+11$

MGA-725M4 Typical Scattering Parameters— Zero Bias TC = 25°C, Vd = 0 V, Id = 0 mA, ZO = 50Ω (test circuit of Figure 2) Freq S 11 S11 S21 S21 S12 S12 S22 S22 S21 RLin RLout Isolation MiniPak Package Outline Drawing

Ordering Information

Part Number Devices Per Container Container MGA-725M4-TR1 3000 7” Reel MGA-725M4-TR2 10000 13”Reel MGA-725M4-BLK 100 antistatic bag Solder Pad Dimensions 1.44 (0.058) 1.40 (0.056) 1.20 (0.048) 1.16 (0.046) 0.70 (0.030) MAX 1.12 (0.045) 1.08 (0.043) GROUND Note: Pad orientation is shown as viewed from top of package. INPUT GROUND OUTPUT 0.82 (0.033) 0.78 (0.031) 0.32 (0.013) 0.28 (0.011) -0.07 (-0.003) -0.03 (-0.001) 0.00 -0.07 (-0.003) -0.03 (-0.001) 0.42 (0.017) 0.38 (0.015) 0.92 (0.037) 0.88 (0.035) 1.32 (0.053) 1.28 (0.051) 0.00 1.+ 01.11.13, 9:02 AMPage 11 "EPCF1BHF.BLFS+11$

Package 4T — MiniPak 1412 Device Orientation Tape Dimensions For Outline 4T USER FEED DIRECTION COVER TAPE CARRIER TAPE REEL END VIEW 8 mm 4 mm TOP VIEW AA AA AA AA Note: “AA” represents package marking code. Package marking is right side up with carrier tape perforations at top. Conforms to Electronic Industries RS-481, “Taping of Surface Mounted Components for Automated Placement.” Standard quantity is 3,000 devices per reel. P F W C D E 5° MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 5° MAX. DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A P 1.40 ± 0.05 1.63 ± 0.05 0.80 ± 0.05 4.00 ± 0.10 0.80 ± 0.05 0.055 ± 0.002 0.064 ± 0.002 0.031 ± 0.002 0.157 ± 0.004 0.031 ± 0.002 CAVITY DIAMETER PITCH POSITION D E 1.50 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.060 ± 0.004 0.157 ± 0.004 0.069 ± 0.004 PERFORATION WIDTH THICKNESS W 8.00 + 0.30 - 0.10 0.254 ± 0.02 0.315 + 0.012 - 0.004 0.010 ± 0.001 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P 3.50 ± 0.05 2.00 ± 0.05 0.138 ± 0.002 0.079 ± 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.213 ± 0.004 0.002 ± 0.00004 COVER TAPE 1.+ 01.11.13, 9:02 AMPage 12 "EPCF1BHF.BLFS+11$

Application Information: Designing with the MGA-725M4 RFIC Amplifier/Bypass Switch The MGA-725M4 is a single stage GaAs RFIC amplifier with an integrated bypass switch. A functional diagram of the MGA-725M4 is shown in Figure 1. RF OUTPUT AMPLIFIER BYPASS MODERF INPUT Figure 1. MGA-725M4 Functional Diagram. for use in receiver front-ends. the receiver such as the mixer. such as transmitter driver stages. biased in the 10–20 mA range. improvement in noise figure. power and efficiency will increase. to biasing a discrete GaAs FET.

Figure 14. Schematic Diagram of 1900 MHz Evaluation Amplifier. for is feedback in the bias circuit. application can present a problem. eliminate resonance effects.

༻Ͱ͖Δ୅දతͳ΋ͷ ͢Δ΋ͷ ͸੹೚Λ ͕༗͠ɺͦ ɺՈి੡඼ɺΞ ༻͞ΕΔ΋ͷͰ͢ɻ ΅͢Մೳ త োͷൃੜ োɺण໋ʹΑΓɺ ࢪ ͍͍ͨ͠·͢ɻ1.+ 01.11.13, 9:02 AMPage 21 "EPCF1BHF.BLFS+11$