MADR-009443-000100 MA-COM | Alldatasheet

Document overview

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Technical content

Features

  • High Voltage CMOS Technology
  • Four Channel
  • Positive Voltage Control
  • CMOS device using TTL input levels
  • Low Power Dissipation
  • Low Cost 4x4 mm, 20-lead PQFN Package
  • 100% Matte Tin Plating over Copper
  • Halogen-Free “Green” Mold Compound
  • 260°C Reflow Compatible

Description

The MADR-009443-000100 is a four channel driver used to translate TTL control inputs into gate control voltages for GaAs FET microwave switches and attenuators. High speed analog CMOS technology is utilized to achieve low power dissipation at moderate to high speeds, encompassing most microwave switching applications. The output HIGH level is optionally 0 to +2.0V (relative to GND) to optimize the intermodulation products of FET control devices at low frequencies. For driving PIN Diode circuits, the outputs are nominally switched between +5V & -5V. The actual driver output voltages will be lower when driving large currents due to the resis- tance of the output devices.

Ordering Information

MADR-009443-000100 Bulk Packaging MADR-009443-0001TR 1000 piece reel MADR-009190-000DIE Die 1 Note: Reference Application Note M513 for reel size information. Functional Schematic Pin Configuration 2 Pin No. Function Pin No. Function

1 Ground 11 Output A4

2 NC 12 Output B4

3 NC 13 Vee

4 Output A1 14 NC

5 Output B1 15 Vcc

6 Output A2 16 C4

7 Output B2 17 C3

8 NC 18 C2

9 Output A3 19 C1

10 Output B3 20 Vopt

  • Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Vcc Vopt Output A1 Vopt Vee Output B1 Logic C1 TTL Buffer Level Shifter Driver 1 Inverter Level Shifter Output A2 Vee Output B2 Output A3 Output B3 Output A4 Output B4 Logic C4 Logic C3 Logic C2 Same as Driver 1 Same as Driver 1 Same as Driver 1 1. See the MADR-009190-000100 data sheet for the die out- line 2. The exposed pad centered on the package bottom may be isolated or connected to ground.

Quad Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 MADR-009443-000100 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Guaranteed Operating Ranges (for driving FET or PIN devices) 3,4,7 Symbol Parameter Unit Min. Typ. Max. VCC Positive DC Supply Voltage V 4.5 5.0 5.5 VEE Negative DC Supply Voltage V -10.5 -5.0 -4.5 VOPT 5 Optional DC Output Supply Voltage V 0 — VCC VOPT - VEE Negative Supply Voltage Range V 4.5 Note 6 16.0 VCC - VEE Positive to negative Supply Range V 9.0 10.0 16.0 TOPER Operating Temperature °C -40 +25 +85 IOH DC Output Current - High mA -35 — — IOL DC Output Current - Low mA — — 35 Trise, Tfall Maximum Input Rise or Fall Time ns — — 500 3. Unused logic inputs must be tied to either GND or V CC. 4. All voltages are relative to GND. 5. V OPT is grounded in most cases when FETs are driven. To improve the intermodulation performance and the 1 dB compression point of GaAs control devices at low frequencies, VOPT can be increased to between 1.0 and 2.0V. The nonlinear characteristics of the GaAs control devices will approximate performance at 500 MHz. It should be noted that the control current that is on the GaAs MMICs will increase when positive controls are applied. 6. When this driver is used to drive PIN diodes, VOPT is often set to +5.0V, with VEE set to -5.0V. 7. 0.01 uF decoupling capacitors are required on the power supply lines. Truth Table Input Cn An Bn Logic “0” VEE VOPT Logic “1” VOPT VEE Outputs Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Silicon Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices.

Quad Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 MADR-009443-000100 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. DC Characteristics over Guaranteed Operating Range Symbol Parameter Test Conditions Units Min. Typ. Max. VIH Input High Voltage Guaranteed High Input Voltage V 2.0 — — VIL Input Low Voltage Guaranteed Low Input Voltage V — — 0.8 VOH Output High Voltage IOH = -0.5 mA V VOPT - 0.1 — — VOL Output Low Voltage IOL = 0.5 mA V — — VEE + 0.1 IIN Input Leakage Current (per Input) VIN = VCC or GND, VEE = min, VCC = max, VOPT = min or max nA -250 — 250 IOH DC Output Current—High (per Output) VCC = 5.0V, VEE = -5.0V, VOPT = 5.0V mA -35 — — IOL DC Output Current—Low (per Output) VCC = 5.0V, VEE = -5.0V, VOPT = 5.0V mA — — 35 IOH_SPIKE Peak Spike Output Current (Rising Edge) (per Output) VCC = 5.0V, VEE = -5.0V, VOPT = 5.0V, CL = 25 pF mA — 35 — IOL_SPIKE Peak Spike Output Current (Falling Edge) (per Output) VCC = 5.0V, VEE = -5.0V, VOPT = 5.0V, CL = 25 pF mA — 50 — ICC Quiescent Supply Current VIN = VCC or GND, VEE = -10.5V, VCC = 5.5V, VOPT = 5.5V, No Output Load µA — — 20 Δ ICC Additional Supply Current (per TTL Input pin) VCC= max, VIN = VCC -2.1V mA — — 1.0 IEE Quiescent Supply Current VIN = VCC or GND, VEE = -10.5V, VCC = 5.5V, VOPT = 5.5V, No Output Load µA — — 20 IOPT Quiescent Supply Current VIN = VCC or GND, VEE = -10.5V, VCC = 5.5V, VOPT = 5.5V, No Output Load µA — — 20 RNFET Output Resistance NFET On (to VEE) VCC = 5.0V, VEE = -5.0V, VOPT = 5.0V, VOUT = -4.9V +25°C, Note 8 Ω — 40 — RPFET Output Resistance PFET On (to VOPT) VCC = 5.0V, VEE = -5.0V, VOPT = 5.0V, VOUT = 4.9V +25°C, Note 8 Ω — 45 — 8. See plot of R NFET and RPFET for variations over temperature for 4.99k and 82 Ω loads (Note that this corresponds to 1 mA and 33 mA currents at 25°). Vout is approximate for 1 mA load.

Quad Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 MADR-009443-000100 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Symbol Parameter -40°C +85°C +85°C Unit TPLH Propagation Delay 20 22 25 ns TPHL Propagation Delay 20 22 25 ns TTLH Output Transition Time (Rising Edge) 5 5 8 ns TTHL Output Transition Time (Falling Edge) 4 5 6 ns Tskew Delay Skew 2 2 2 ns CIN Input Capacitance 5 5 5 pF CPDC Power Dissipation Capacitance 10 50 50 50 pF CPDE Power Dissipation Capacitance 10 100 100 100 pF Typical performance PRF (max) 50% Duty Cycle DC — 10 MHz AC Characteristics Over Guaranteed Operating Range (Driving FETs) 9 10. Total Power Dissipation is calculated by the following formula: PD = V CC 2fCPDC + VEE 2fCPDE. Switching Waveforms—Driving FETs 1.3V 10% 90% Tr Tf TPLH TPHL TSKEW TSKEW 50% TTLH TTHL 90% 10%OUTPUT A OUTPUT B INPUT C VIN LOGIC 1 LOGIC 0 1.3V 90% 10% 50% 90% 10% VOUT OUTPUT HIGH OUTPUT LOW Output Resistance vs. Temperature11 11. Output resistance were measured under the condition of VCC = 5.0V, VOPT = 5.0V, and VEE = -5.0V, with load resis- tors from outputs to ground. 20.0 40.0 60.0 80.0 100.0 120.0 Temperature (C) Resistance (Ohms) PFET with 82Ω load NFET with 82Ω load PFET with 4.99k load NFET with 4.99k load

Quad Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 MADR-009443-000100 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Symbol Parameter -40°C +85°C +85°C Unit TPLH Propagation Delay 20 22 25 ns TPHL Propagation Delay 20 22 25 ns TTLH1 Output Transition Time (Rising Edge) 5 5 8 ns TTHL Output Transition Time (Falling Edge) 4 4 5 ns Tskew Delay Skew 2.5 2.5 2.5 ns CIN Input Capacitance 5 5 5 pF CPDC Power Dissipation Capacitance 13 45 45 45 pF CPDE Power Dissipation Capacitance 13 180 180 180 pF Typical performance TTLH2 Output Setttling Time (Rising Edge) 2 5 6 µs CPDO Power Dissipation Capacitance 13 135 135 135 pF PRF (max) 50% Duty Cycle DC — 10 MHz AC Characteristics Over Guaranteed Operating Range (Driving PIN Diodes) 12 12. V CC = 5.0V, VEE = -5V, VOPT = 5.0V, CL = 25 pF, input LOGIC “1” = 3V, LOGIC “0” = 0V, Trise, Tfall = 6 ns 13. Total Power Dissipation is calculated by the following formula: PD = V CC 2fCPDC + VEE 2fCPDE + VOPT 2fCPDO Switching Waveforms—Driving PINs 14 1.3V 10% 90% Tr TPLH TSKEW 50% TTLH1 90% of VOL to VOH1 10%OUTPUT A OUTPUT B INPUT C VIN VOUT VOH1 VOH_Final VOL 90% of VOL to VOH_Final TTLH2 Switching Waveforms—Driving 35 mA load with 25 pF load capacitance 14. This effect is only apparent when driving high currents and onl y occurs on the rising edges. On the schematic in “Typical Application for a SPDT Switch” note that the rising edge turns on the shunt diodes. There will be a slight effect on isolation over time, but the insertion loss should not be affected.

Quad Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 MADR-009443-000100 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Absolute Maximum Ratings15 Symbol Parameter Min Max Unit VCC Positive DC Supply Voltage -0.5 7.0 V VEE Negative DC Supply Voltage -11.0 0.5 V VOPT Optional DC Output Supply Voltage -0.5 VCC +0.5 V VOPT - VEE Output to Negative Supply Voltage Range -0.5 18.0 V VCC - VEE Positive to Negative Supply Voltage Range -0.5 18.0 V VIN DC Input Voltage -0.5 Note 17 VCC +0.5 V IIN DC Input Current -25 25 mA VO DC Output Voltage VEE – 0.5 VOPT + 0.5 V PD

18 Power Dissipation in Still Air — 500 mW

TOPER Operating Temperature -55 125 °C ICC Positive DC Supply Current (-0.5V ≤ VIN ≤ 0.8V; 2.0V ≤ VIN ≤ VCC + 0.5V; VCC - VIN ≤ 7.0V ) — 20 mA IEE Negative DC Supply Current (per Output) 16 -50 — mA ESD ESD Sensitivity 2.0 — kV IOPT Optional DC Output Supply Current (per Output) 16 — 50 V TSTG Storage Temperature -65 150 °C 15. All voltages are referenced to GND. All inputs and outputs incorporate latch-up protection structures. 16. The maximum I EE and IOPT are specified under the condition of VCC = 5.5V, VEE = -5.5V, VOPT = 5.5V, and the total power dissipation is within 500 mW in still air. 17. If V CC ≥ 6.5V, then the minimum for VIN is VCC - 7.0V. 18. Derate -7 mW/°C from 65°C to 85°C.

Quad Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 MADR-009443-000100 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Equivalent Output Circuit for An and Bn Outputs (33 mA load at 25°) Typical Application for a SPDT Switch 19,20 PFET 62 ohms Vopt NFET 67 ohms Vee An and Bn Outputs 19. Note that the description of the above circuit is on the following page. 20. Only one section of MADR-009443-000100 is shown. The other three sections will have equivalent performance. .01 µF RF2 RF1 RF SECTION Rc RF Common 560 pF 560 pF MADR-009443- 000100 GND Vee -5V Logic Vcc +5V .01 µF Vopt

Quad Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1 MADR-009443-000100 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Lead-Free, 4 x 4 mm, 20-lead PQFN† † Reference Application Note M538 for lead-free solder reflow recommendations. Description of Circuit The MADR-009443-000100 provides four pairs of comple mentary outputs that are ea ch capable of driving a maximum of ± 35 mA into a load. In addition, with proper capa citor selection (C3 & C4) used in parallel with the current setting resistor (R1 & R2), additional spiking current can be achieved. To achieve the Non-Inverting and Inverting complement ary voltages, each output is switched between two internal FETs. The FETs are connected to V OPT for the positive output and V EE for the negative output. V OPT and VEE are adjustable for various configurations and have the following limitations: VEE can be no more nega- tive than –10.5 volts; V OPT can be no more positive than +7.0 volts AND V OPT must always be less than or equal to VCC. Increasing V OPT beyond VCC will prevent the device from swit ching states when commanded to by the logic input. The most common configuration is to drive VEE at –5.0 volts with VCC and VOPT tied together at +5.0 volts.