MADR-008851-000100

MADR-008851-000100 MA-COM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Features

• High Drive Current Capability (Up to 50 mA)
• Up to 32V Back Bias in Off State
• Single CMOS Logic Input with 10K Ohm Internal Pull Down Resistor
• Fast Switching
• Low Current Consumption
• Land Grid Array Package for SMT Applications
• 260°C Reflow Compatible
• RoHS* Compliant
• Tape and Reel Packaging Available

Description

The MADRv008851v000100 Switch Driver is dev signed to work with M/AvCOM Technology Solutions line of series /shunt SPDT HMIC switches which opv erate in the power range of approximately 5 to 50W CW. It is capable to provide forward bias currents up to 50 mA for each diode in the series/shunt switch, with back bias voltage configurable from 12V to 32 V. It is packaged in a Land Grid Array surface moun t package and is available in tape and reel packaging for high volume applications. Sample boards are available with M/AvCOM Tech 50W switch MASWv000834v13560T. Ordering Information 1 Part Number Package MADRv008851v000100 Bulk Packaging MADRv008851v0001TR 300 piece Reel MADRv008851v0001TB Sample Board with Driver & MASWv000834v13560T Switch 1. Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, European Union Directive Pin Configuration Pin No. Pin Name Pin No. Pin Name

1 VCC 13 GND

2 GND 14 SH2

3 C1 (Logic) 15 GND

4 GND 16 RX Drive

5 VDD 17 GND

6 GND 18 GND

7 GND 19 GND

8 GND 20 GND

9 GND 21 GND

10 TX Drive 22 GND

11 GND 23 GND

12 SH1 v v

Please observe the following precautions to avoid damage: Solder & Assembly Cleaning Driver is not approved for aqueous washing. Nov clean solder is recommended Static Sensitivity Silicon Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices.

PIN Diode Driver for Series / Shunt High Power Swit ches Rev. P2 MADR-008851-000100 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/AvCOM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/AvCOM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Recommended Operating Conditions Parameter Test Conditions Unit Min Typ Max VCC Nominal VCC = 3.3 V Nominal VCC = 5.0 V V V 3.0 4.5 3.3 5.0 3.6 5.5 VDD Input Voltage V 12.0 28.0 32.0 C1 (Low Level Input Voltage) VCC = 3.0 V to 3.6V VCC = 4.5 V to 5.5 V V V 0.0 0.0 0.0 0.0 0.8 0.3 x VCC PRF 50% duty cycle KHz DC — 50 TX Series Diode Bias Current 2 VDD = 12 V to 32 V mA — — 50 RX Series Diode Bias Current 2 VDD = 12 V to 32 V mA — — 50 Shunt Diode Bias Current 3 VDD = 12 V to 20 V VDD = 20 V to 32 V mA mA 50 C1 (High Level Input Voltage) VCC = 3.0 V to 3.6V VCC = 4.5 V to 5.5 V V V 2.0 0.7 x VCC VCC VCC VCC VCC 2. TX and RX currents are user selectable. Referenc e “Driver and SPDT Schematic” for suggested values. 3. A resistor needs to be connected between SH1 and SH2 to set the shunt diode bias current. Reference “Driver and SPDT Schematic” for suggested values. Parameter Absolute Maximum VCC (+5V) v0.5 V to +6.5 V VDD (+28V) v0.5 V to 40 V C1 (Logic) v0.5 V to 6.5 V RX Sinking Current 60 mA TX Sinking Current 60 mA Power Dissipation in Still Air 100 mW Operational Temperature v40 to +85°C Storage Temperature v55 to +125°C Absolute Maximum Ratings 4,5 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. M/AvCOM Tech does not recommend sustained operation near these survivability limits. Truth Table Control Input Condition of Switch C1 TX Voltage RX Voltage SH Current TX RX

0 High Low Low Off On

1 Low High High On Off

PIN Diode Driver for Series / Shunt High Power Swit ches Rev. P2 MADR-008851-000100 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/AvCOM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/AvCOM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Switching Speed When Driving 50 pF Capacitive Loads6 : Testing Conditions Symbol Parameter Unit Typical Performance -40°C +25°C 85°C VCC = +5.0 V VDD = +28 V ISERIES = 50 mA Switching Speed: TX T PLH T PHL Tr Tf 50% CTL to 90% Voltage 50% CTL to 10% Voltage 10% v 90% 90% v 10% ns ns ns ns 200 350 180 200 330 420 320 250 500 500 480 320 Switching Speed: RX T PLH T PHL Tr Tf 50% CTL to 90% Voltage 50% CTL to 10% Voltage 10% v 90% 90% v 10% ns ns ns ns 200 360 180 220 350 430 330 280 520 520 500 350 VCC = +3.3 V VDD = +12 V ISERIES = 50 mA Switching Speed: TX T PLH T PHL Tr Tf 50% CTL to 90% Voltage 50% CTL to 10% Voltage 10% v 90% 90% v 10% ns ns ns ns 200 530 180 300 400 580 370 320 570 630 550 360 Switching Speed: RX T PLH T PHL Tr Tf 50% CTL to 90% Voltage 50% CTL to 10% Voltage 10% v 90% 90% v 10% ns ns ns ns 200 600 180 330 400 640 390 360 580 700 570 400 6. Switching parameters for the shunt output are no t listed since they can only be measured with a diode switch. DC Characteristics : T A = +25 °° °°C, VCC = 3.0 to 5.5 V, VDD = 12 to 28 V Parameter Test Conditions Unit Min Typ Max Quiescent VCC Supply Current — nA — 50 — Quiescent VDD Supply Current — mA — 0.8 — Output Back Bias Voltage RX TX SH1 TX ON RX ON RX ON V V V VDD v 0.5 VDD VDD v 0.5 Output Resistance RX TX RX ON TX ON Ω Ω 22.5 22.5

PIN Diode Driver for Series / Shunt High Power Swit ches Rev. P2 MADR-008851-000100 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/AvCOM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/AvCOM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Switching Speed When Driving M/A-COM MASW-000834-13560T Switch 7 : 7. Switching parameters were measured with a 10 dBm , 2 GHz RF input. Testing Conditions Symbol Parameter Unit Typical Performance -40°C +25°C 85°C VCC = +5.0 V VDD = +28 V ISERIES = 50 mA ISHUNT = 50 mA TX Series Diode T ON T OFF Tr Tf 50% CTL to 90% RF 50% CTL to 10% RF 10% v 90% RF 90% v 10% RF ns ns ns ns 250 400 200 450 520 200 250 600 600 300 300 RX Shunt Diode T ON T OFF Tr Tf 50% CTL to 90% Current 50% CTL to 10% Current 10% v 90% Current 90% v 10% Current ns ns ns ns 480 100 470 550 100 540 620 100 610 VCC = +3.3 V VDD = +12 V ISERIES = 50 mA ISHUNT = 35 mA TX Series Diode T ON T OFF Tr Tf 50% CTL to 90% RF 50% CTL to 10% RF 10% v 90% RF 90% v 10% RF ns ns ns ns 460 630 280 400 620 770 300 350 820 900 340 320 RX Series Diode T ON T OFF Tr Tf 50% CTL to 90% RF 50% CTL to 10% RF 10% v 90% RF 90% v 10% RF ns ns ns ns 630 470 400 280 880 550 450 200 1200 650 550 200 RX Shunt Diode T ON T OFF Tr Tf 50% CTL to 90% Current 50% CTL to 10% Current 10% v 90% Current 90% v 10% Current ns ns ns ns 860 100 850 850 100 840 900 100 880 RX Series Diode T ON T OFF Tr Tf 50% CTL to 90% RF 50% CTL to 10% RF 10% v 90% RF 90% v 10% RF ns ns ns ns 370 220 150 600 300 300 120 840 350 500 160

PIN Diode Driver for Series / Shunt High Power Swit ches Rev. P2 MADR-008851-000100 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/AvCOM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/AvCOM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Driver and SPDT Schematic for 2 GHz Applciations 8,9,10,11,12,13,14 8. Forward Bias Diode Voltage: ∆Vf is ~0.9V @ 22 mA; ∆Vf is ~1.0V @ 35 mA 9. R1 is calculated by (VCC v ∆Vf) / I series v 22 Ω, where I series is the desired forward bias current for the series diodes. For 20 mA load curv 3.3V. 10. R2 is calculated by (VDD v ∆Vf) / I shunt , where I shunt is the desired forward bias current for the shunt diode. The power rating is calculated by I shunt x (VDD v ∆Vf). For 28V VDD and 20 mA of I shunt , R2 should use a 1W, 1.3k ohm resistor. 11. C8 is already builtvin for M/AvCOM MASWv000834v13560T switch. 12. The current through the backvbiased diodes will be the leakage current for the diodes 13. C1vC7, L1vL4, R1, R2, and the switch are discrete components that should be installed on the user’s board. It is recommended that Coilcraft 0603CSv27NXJLW or equivalent be used for L1vL4 at 2 GHz. For other frequency band, C1vC3 and L1vL4 should be adjusted. 14. The switching speed will be affected by the val ue of VCC, VDD, C6, C7, the size of the PIN diodes, and the forward bias currents. Use higher VCC and VDD, and lower forward bias currents for faster switching.

PIN Diode Driver for Series / Shunt High Power Swit ches Rev. P2 MADR-008851-000100 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/AvCOM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/AvCOM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Lead-Free Land Grid Array, 0.64 in x 0.84 in † † Reference Application Note M538 for leadvfree solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements.